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Coating type ammonia sensor nano film and method for preparing same

An ammonia gas sensor and nano-film technology, which is applied to the film coated on the sensor, the preparation of the above-mentioned nano-film, and the coating-type ammonia sensor nano-film field can solve the problem that the sensitive film is unstable, the ammonia gas selectivity is poor, Affecting gas sensing performance and other issues, achieving the effects of good responsiveness, low cost, and low operating temperature

Inactive Publication Date: 2007-07-11
GUANGZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Currently based on In 2 o 3 The semiconductor ammonia gas sensor of the material has been reported in the literature, and it can be known from the existing literature reports that In 2 o 3 The problem with miniature sensors made for gas-sensitive materials is that In 2 o 3 The selectivity to ammonia is poor and the sensitivity is not high (this is because In 2 o 3 Particles are large and uneven), In 2 o 3 The preparation method of the sensitive film and the production technology of the sensitive film will directly affect its gas-sensing performance. Most of the production of the sensitive film adopts relatively complicated physical methods. Because the sensitive film made by the physical method is not stable, it is difficult to develop and apply so far.

Method used

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  • Coating type ammonia sensor nano film and method for preparing same

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The steps of the manufacturing process of the thin film of coating type ammonia sensor provided by the invention are:

[0032] (1) The analytically pure crystalline InCl 3 4H 2 O is prepared into a solution with a concentration of 0.25 mol / L, slowly dripping ammonia water with a concentration of 1 mol / L under the condition of controlling the speed of 400 (rev / min), when PH=8, stop adding ammonia water, and continue to stir for three Hours make the indium hydroxide coagulate evenly.

[0033] (2) at a centrifugal speed of 10,000 rpm, filter, and wash with deionized water, so that the chloride ion in the solution is less than 10 -5 mol / L.

[0034] (3) Put the repeatedly cleaned indium hydroxide in a vacuum oven at 120° C. for 10 hours to vacuum dry.

[0035] (4) Fully dissolve indium hydroxide with 1g / mL glacial acetic acid, add 1% (ratio of substance amount) butyl titanate dropwise, then add a small amount of water to hydrolyze it, and then make glacial acetic acid at...

Embodiment 2

[0039] The steps of the manufacturing process of the thin film of coating type ammonia sensor provided by the invention are:

[0040] (1) The analytically pure crystalline InCl 3 4H 2 O is prepared into a solution with a concentration of 0.2 mol / L, and slowly drips ammonia water with a concentration of 0.9 mol / L under the condition of controlling the speed of 450 (rev / min). When PH=8, stop adding ammonia water and continue stirring 2.8 hours to uniformly coagulate the indium hydroxide.

[0041] (2) At a centrifugal speed of 9500 rpm, filter, and wash with deionized water, so that the chloride ion in the solution is less than 10 -5 mol / L.

[0042] (3) Put the repeatedly washed indium hydroxide in a vacuum oven at 110° C. for 5 hours to vacuum dry.

[0043] (4) Fully dissolve indium hydroxide with 1g / mL glacial acetic acid, add 1% (ratio of substance amount) butyl titanate dropwise, then add a small amount of water to hydrolyze it, and then make glacial acetic acid at room t...

Embodiment 3

[0047] The steps of the manufacturing process of the thin film of coating type ammonia sensor provided by the invention are:

[0048] (1) The analytically pure crystalline InCl 3 4H 2 O is prepared into a solution with a concentration of 0.3 mol / L, and slowly drips the ammonia water with a concentration of 1.1 mol / L under the condition of controlling the speed of 500 (rev / min). When the pH=8, stop adding the ammonia water and continue to stir 3.1 hours to make the indium hydroxide coagulate evenly.

[0049] (2) at a centrifugal speed of 10500 rpm, filter, and clean with deionized water, so that the chloride ion in the solution is less than 10 -5 mol / L.

[0050] (3) Put the repeatedly cleaned indium hydroxide in a vacuum oven at 115° C. for 8 hours to vacuum dry.

[0051] (4) Fully dissolve indium hydroxide with 1g / mL glacial acetic acid, add 1% (ratio of substance amount) butyl titanate dropwise, then add a small amount of water to hydrolyze it, and then make glacial aceti...

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Abstract

The coating type alkaline air sensor nanometer thin film forms with weight ratio of(100-90)(0-10) of indium trioxide, metatitanic acid, with the working process starting from adding alkaline water into the solution of InCl3 .4H2O stirring till the deposit of indium hydroxide, centrifugation, filtering, cleaning and drying to get dry gel by adding metatitanic acid after solution of the indium hydroxide with hydrolytic decomposition and glacial acetic acid volatilization, sintering, cooling to get the titan mixed indium oxide particle and grinding, getting the clear liquid after ultrasonic settlement, centrifugation, getting indium trioxide powder. It is simple, with good response and optional feature, high sensitivity, low monitoring limit, quick recovery of response, good stability and low working temperature.

Description

technical field [0001] The invention relates to a film coated on a sensor, in particular to a coated ammonia sensor nano film, and also relates to a preparation method for preparing the above nano film, which belongs to the technical field of film materials. Background technique [0002] Although ammonia exists in the atmosphere at a low concentration, the lower concentration of ammonia still has adverse effects on people and the environment. The substances also have a strong corrosive effect, so it is very necessary to quickly and accurately determine their content to provide a basis for the governance of the air environment. The monitoring method currently recommended by the state is Nessler's reagent spectrophotometry, which has high sensitivity but poor selectivity and is not suitable for on-site monitoring. [0003] Currently based on In 2 o 3 The semiconductor ammonia gas sensor of the material has been reported in the literature, and it can be known from the existi...

Claims

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Application Information

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IPC IPC(8): G01N27/30G01N27/12
Inventor 浣石黄风雷谭湘倩
Owner GUANGZHOU UNIVERSITY
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