Erbium-doped indium oxide gas-sensitive nano material, preparation method and application thereof

A technology of gas-sensing materials and nano-materials, applied in the field of erbium-doped indium oxide nano-gas-sensing materials and its preparation, to achieve the effects of easy industrial production, easy operation, and simple process

Inactive Publication Date: 2009-09-23
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The present invention is based on the pure indium oxide hollow sphere nanomaterial prepared in the literature [3], doped with erbium oxide, and obtains the erbium-doped indium oxide nano-gas sensitive material, and there is no information on the erbium-doped indium oxide nano-gas-sensitive material to report

Method used

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  • Erbium-doped indium oxide gas-sensitive nano material, preparation method and application thereof
  • Erbium-doped indium oxide gas-sensitive nano material, preparation method and application thereof
  • Erbium-doped indium oxide gas-sensitive nano material, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A. Take 1mmol of analytically pure indium salt, 5mmol of resorcinol, 5ml of formamide, and 10ml of deionized water, respectively, and add them into a 22ml polytetrafluoroethylene autoclave, and stir until the reactants are completely dissolved. The reaction kettle was directly put into an oven with a temperature of 160° C. for 12 hours. After the reaction was completed, it was cooled at room temperature to obtain a white precipitate. It was washed and centrifuged three times. The white precipitate was then dried at 60°C for 5 hours, and then calcined at 400°C for 3 hours to obtain light yellow indium oxide powder. The scanning electron microscope picture of the sample is shown in figure 2 with image 3 .

[0026] B. Take 0.03g of indium oxide and grind it in a mortar. Weigh 0.1036g Er(NO 3 ) 3 ·7H 2 O was dissolved in 100ml of deionized water to prepare a solution with a concentration of 0.00216mol / L, and 0.25ml of the solution was added dropwise into a mortar, ...

Embodiment 2

[0028] A. Same as Example 1

[0029] B. Take 0.03g of indium oxide and grind it in a mortar. Weigh 0.1036g Er(NO 3 ) 3 ·7H 2 O was dissolved in 100ml of deionized water to prepare a solution with a concentration of 0.00216mol / L, and 0.5ml of the solution was added dropwise into a mortar, and fully ground into a slurry. The slurry was then dried at 60°C for 3 hours and calcined at 400°C for 3 hours. That is, an erbium-doped indium oxide nanometer gas-sensing material with an Er / In molar ratio of 0.5:100 is obtained.

Embodiment 3

[0031] A. Same as Example 1

[0032] B. Take 0.03g of indium oxide and grind it in a mortar. Weigh 0.1036g Er(NO 3 ) 3 ·7H 2 O was dissolved in 10ml of deionized water to prepare a solution with a concentration of 0.0216mol / L, and 0.125ml of the solution was added dropwise into a mortar, and fully ground into a slurry. The slurry was then dried at 60°C for 3 hours and calcined at 400°C for 3 hours. That is, an erbium-doped indium oxide nanometer gas-sensing material with an Er / In molar ratio of 1.25:100 is obtained.

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Abstract

The invention provides an erbium-doped indium oxide gas-sensitive nano material, a preparation method and application thereof. The erbium-doped indium oxide gas-sensitive nano material is an indium oxide nano material doped by erbium oxide and can be expressed as Er2O3-In2O3, wherein the molar ratio of Er to In is 0.25-2.5:100; the indium oxide is hollow spheres which consist of granules of 30 to 60 nanometers and of which diameters are 200 to 300 nanometers; and the erbium oxide is attached to the surface of the indium oxide granules. The preparation method comprises the following steps: using indium salt, methanamide and m-dihydroxybenzene as raw materials to synthesize hollow indium hydroxide microspheres by adopting a hydro-thermal method, and drying and calcining the hollow microspheres to form indium oxide carriers; and then adding indium salt solution into the indium oxide, and grinding, drying and calcining the precipitate to obtain the erbium-doped indium oxide nano material. The gas-sensitive material has high sensitivity for ethanol, and can be used for manufacturing an ethanol gas sensor.

Description

technical field [0001] The invention relates to an erbium-doped indium oxide nano gas sensitive material and a preparation method thereof. The gas sensitive material has high sensitivity to ethanol and can be used to make ethanol gas sensors. Background technique [0002] Indium oxide is an N-type semiconductor metal oxide, which can be used as a gas-sensing material for detecting toxic and harmful gases in the environment. Although tin oxide is currently one of the most widely used gas-sensing materials with the best comprehensive performance, there are still some problems, and people hope to find better materials. As a semiconductor material, indium oxide has low resistivity, wide bandgap, and stable physical and chemical properties. It shows better gas-sensing properties for certain gases, and has potential application value in the field of gas sensors. Indium oxide nanomaterials, due to the reduced particle size and increased specific surface area, exhibit unique small...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12C01G15/00
Inventor 郭广生樊军顾福博
Owner BEIJING UNIV OF CHEM TECH
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