Indium oxide nanosphere and preparation method thereof

A technology of nanospheres and indium oxide, which is applied to the field of indium oxide nanospheres and their preparation, can solve the problems of long reaction time, high synthesis temperature, complicated preparation process and the like, and achieve the effects of less harsh reaction conditions, low cost and simple process

Inactive Publication Date: 2015-05-06
XIAN TECHNOLOGICAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] One object of the present invention is to solve the problems of complex preparation process, high

Method used

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  • Indium oxide nanosphere and preparation method thereof
  • Indium oxide nanosphere and preparation method thereof
  • Indium oxide nanosphere and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] An indium oxide (In 2 o 3 ) The preparation method of nanospheres is carried out according to the following steps:

[0026] Step one: take by weighing 1 mmol of indium nitrate (In(NO 3 ) 3 4.5 H 2 (2) and 1 mmol of urea, prepare indium nitrate and urea mixed solution, be dissolved in 35mL ethanol, be configured into a uniform colorless transparent solution after magnetic stirring;

[0027] Step 2: Transfer the mixed system obtained in Step 1 to a polytetrafluoroethylene-lined reactor, raise the temperature to 120°C for 1 hour, and cool naturally to obtain a solvothermal product;

[0028] Step 3: Centrifuge the solvothermal product obtained in Step 2, wash it three times with deionized water and absolute ethanol; dry the centrifuged product in air at 60°C for 6 h to obtain the precursor indium hydroxide (In(OH ) 3 );

[0029] Step 4: the indium hydroxide (In(OH)) obtained in step 3 3 ) precursors were calcined in a muffle furnace at 300 °C in an air atmosphere fo...

Embodiment 2

[0037] An indium oxide (In 2 o 3 ) The preparation method of nanospheres is carried out according to the following steps:

[0038] Step one: take by weighing 1 mmol of indium nitrate (In(NO 3 ) 3 4.5 H 2 O) with 5 millimoles of urea, be dissolved in 35mL ethylene glycol, be configured into a uniform colorless transparent solution after magnetic stirring;

[0039] Step 2: Transfer the mixed system obtained in Step 1 to a polytetrafluoroethylene-lined reactor, raise the temperature to 180 °C for 12 h, and cool naturally to obtain a solvothermal product;

[0040] Step 3: Centrifuge the solvothermal product obtained in Step 2, wash it three times with deionized water and absolute ethanol; dry the centrifuged product in air at 80°C for 12 h to obtain the precursor indium hydroxide (In(OH ) 3 );

[0041] Step 4: the indium hydroxide (In(OH)) obtained in step 3 3 ) precursors were calcined in a muffle furnace at 600 °C in an air atmosphere for 240 min to obtain indium oxide (In...

Embodiment 3

[0043] An indium oxide (In 2 o 3 ) The preparation method of nanospheres is carried out according to the following steps:

[0044] Step 1: take by weighing 1 mmol of indium nitrate (In(NO 3 ) 3 4.5 H 2 O) with 1 mmol of urea, dissolved in 20 mL of ethanol and 15 mL of ethylene glycol, configured into a uniform colorless and transparent solution after magnetic stirring;

[0045] Step 2: Transfer the mixed system obtained in Step 1 to a polytetrafluoroethylene-lined reactor, raise the temperature to 120 °C for 1 h, and cool naturally to obtain a solvothermal product;

[0046] Step 3: centrifuge the solvothermal product obtained in step B, wash with deionized water and absolute ethanol three times respectively; dry the centrifuged product in air at 80°C for 12 h to obtain the precursor indium hydroxide (In(OH ) 3 );

[0047] Step 4: the indium hydroxide (In(OH)) obtained in step 3 3 ) precursors were calcined in a muffle furnace at 600 °C in an air atmosphere for 240 min ...

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Abstract

The invention relates to the technical field of preparation of inorganic nanomaterials and particularly relates to an indium oxide nanosphere and a preparation method thereof. The invention aims at solving the problems of complex preparation process, high synthesis temperature and long reaction time of the existing preparation method of the indium oxide nanosphere and simultaneously providing a low-cost indium oxide nanosphere material. The preparation method of the indium oxide nanosphere comprises the following steps: firstly, preparing a mixed solution of indium nitrate and urea, adding ethanol and/or ethylene glycol, dissolving and magnetically stirring to obtain a homogeneous colorless transparent solution; secondly, reacting the colorless transparent solution by a solvothermal method and collecting a solvothermal product; thirdly, centrifuging and washing the solvothermal product to obtain an indium hydroxide precursor; and fourthly, carrying out high-temperature roasting to obtain the indium oxide nanosphere. The preparation method has the advantages of simple process, less reactants, low synthesis temperature, short reaction time and low obtained product cost, and can be widely applied.

Description

technical field [0001] The invention belongs to the technical field of preparation of inorganic nanometer materials, and relates to indium oxide (In 2 o 3 ), especially relates to an indium oxide nanosphere and a preparation method thereof. Background technique [0002] Nano-indium oxide (In 2 o 3 ) is an important special n-type semiconductor material with a bandgap width of 3.6~3.75eV, high electrical conductivity and visible light transmittance, and indium oxide is used in chemical, biological sensing, solar cells, photocatalysis, optoelectronics and flat panel displays and other fields have a wide range of applications. The preparation methods of indium oxide mainly include gas phase method, solid phase method and liquid phase method. The gas-phase method has high requirements on equipment parameters and low yield, so it cannot be used in industrial mass production; the particle size of nanoparticles obtained by the solid-phase method is generally not uniform, and i...

Claims

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Application Information

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IPC IPC(8): C01G15/00B82Y30/00B82Y40/00
CPCC01G15/00C01P2002/72C01P2004/03C01P2004/32C01P2004/62C01P2006/90
Inventor 张格红关卫省赵平歌张宪卢昶雨
Owner XIAN TECHNOLOGICAL UNIV
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