Preparation method of nano indium oxide

Abstract

The invention discloses a preparation method of nano indium oxide, which comprises the following steps: carrying out electrolysis by using metal indium as an anode, an inert electrode as a cathode andan ammonium salt aqueous solution as an electrolyte, heating the electrolyzed solution to a preset temperature after electrolysis for a first preset time, continuously adding an ammonia water solution into the electrolyzed solution, stirring for a second preset time to obtain indium hydroxide, carrying out solid-liquid separation on indium hydroxide in the electrolyte, and carrying out high-temperature calcination to obtain the nano indium oxide powder. According to the preparation method of the nano indium oxide, provided by the invention, a solution after electrolysis is subjected to heating neutralization stirring, solid-liquid separation and calcination, so that the nano indium oxide with good stability, uniform particle size and uniform particle distribution can be obtained, the method solves the technical problems that the nano indium oxide powder prepared in the prior art is unstable in property due to the fact that the particle size is too small, then particle distribution isuneven, and agglomeration is likely to happen.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a method for preparing nanometer indium oxide. Background technique [0002] Indium oxide (In 2 o 3 ) is an extended product of indium. Indium hydroxide is the precursor for manufacturing indium oxide or compound powder containing indium oxide, which can be used to manufacture ITO targets for sputtering that form ITO films (composite oxides with indium-tin as the main component) ITO film is a transparent electrode film widely used in solar cells and liquid crystal display-based display devices. With the rapid development of global digital technology, today's optoelectronic devices are gradually developing towards personalization, ultra-large and special-shaped flat display, and the demand for transparent conductive films such as sputtering targets has increased significantly. Indium oxide is formed as a transparent conductive film As the main raw material is used,...

AI Technical Summary

Problems solved by technology

Most of the methods for preparing indium oxide in the prior art have shortcomings such as many synthesis process steps, many process parameters that are difficult to control, and high requirements for equipment, resulting in a long production cycle.

For example, the chemical vapor deposition method needs to be carried out at high temperature and high pressure or in a vacuum state, which requires high equipment, and the output is low, so it is difficult to realize industrial production; the hydrothermal solvothermal method needs to be reacted at high temperature and high pressure, high temperature and high pressure, and some parts are easy to corrode The substance will wear the lining of the reactor to a certain extent, and at the same time, the growth temperature of the hydrothermal synthesis method has a certain limit

[0004] The method for preparing indium oxide in the prior art also adopts the electrolysis method. Although the nano-scale indium oxide powder can be prepared by using the electrolysis method, the prepared nano-scale indium oxide powder has too fine particle size and fine powder properties. If it is unstable, it will cause uneven particle distribution and easy agglomeration, which cannot meet the needs of the industry.

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