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Method for production of metal hydroxide and method for production of ITO sputtering target

A hydroxide and manufacturing method technology, applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problem of damage to mass production, unstable pH value and temperature of electrolyte, and inability to reduce manufacturing costs And other issues

Inactive Publication Date: 2015-02-04
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such an electrolytic solution cannot be reused but is disposed of as a waste liquid. Accordingly, the cost of waste liquid treatment is incurred, the manufacturing cost cannot be reduced, and there is a problem that the operation of replacing the electrolytic solution is required, which significantly impairs mass production.
[0006] In addition, when the composition of the electrolyte changes, the pH and temperature of the electrolyte become unstable
There is also the particle size of the metal hydroxide is easily affected by the pH value and temperature of the electrolyte. When the pH value of the electrolyte is low or the temperature is high, the particle size increases, and it is difficult to obtain a metal hydroxide consistent with the desired particle size. product problem

Method used

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  • Method for production of metal hydroxide and method for production of ITO sputtering target
  • Method for production of metal hydroxide and method for production of ITO sputtering target
  • Method for production of metal hydroxide and method for production of ITO sputtering target

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Embodiment Construction

[0022] refer to figure 1 , EM is an electrolysis device used in this embodiment, and the electrolysis device EM includes an electrolytic cell 1 . The electrolytic tank 1 is composed of an air tank 10 and a settling tank 11 . The air tank 10 and the settling tank 11 are opened on the top surface and one side surface, and flange portions 10a, 11a are formed around the one side surface. Packages 10b, 11b are fitted in grooves formed in the flange portions 10a, 11a, and the electrolyte solution can be sealed between them and a holding plate 21 described later.

[0023] A cathode 2 is arranged in the electrolytic cell 1 , and the electrolytic cell 1 is partitioned by the cathode 2 . The cathode 2 is composed of a gas diffusion electrode 20 and two holding plates 21 made of titanium sandwiching the gas diffusion electrode 20 . The holding plate 21 functions to efficiently conduct electricity to the gas diffusion electrode 20 . The gas diffusion electrode 20 is formed by laminati...

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Abstract

Provided are a method for production of metal hydroxide highly suited to volume production, whereby it is possible to obtain a metal hydroxide having a uniform desired particle size, without the need for wastewater treatment of the electrolysis solution; and a method for production of ITO sputtering target. A gas diffusion electrode (20) constituted by stacking of a hydrophobic gas diffusion layer (20a) and a hydrophilic reaction layer (20b) is arranged within an electrolysis tank (1), partitioning the electrolysis tank interior. A deposition tank (11) facing the reaction layer of the partitioned electrolysis tank holds an electrolysis solution (S) inside, and indium (4) is immersed into the electrolysis solution. With the gas diffusion electrode as the cathode and the indium as the anode, voltage is applied across the two electrodes, and oxygen is supplied into an air tank (10) facing the gas diffusion layer of the partitioned electrolysis tank to carry out electrolysis, causing indium hydroxide to precipitate into the electrolysis solution.

Description

technical field [0001] The invention relates to a method for manufacturing a metal hydroxide and a method for manufacturing an ITO sputtering target, in particular to a method for manufacturing a metal hydroxide for making an ITO target. Background technique [0002] In flat panel displays such as liquid crystal displays and plasma displays, transparent conductive films of indium tin oxide (hereinafter abbreviated as "ITO") thin films are used as electrodes. In the film formation of the ITO film, it is considered that a sputtering device is widely used in mass production or the like. As this type of sputtering apparatus, an apparatus that applies high-frequency power to an ITO target to form an ITO film is used (for example, refer to Patent Document 1). [0003] Such a method for producing an ITO target is known in Patent Document 2, for example. In this method, first, an electrolytic solution is placed in an electrolytic cell, indium as an anode and a cathode (for example...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/00C25B11/03C25B11/04
CPCC25B1/00C25B9/08H01J37/3426C25B9/19H01J37/3491C23C14/08C25B11/04Y02E60/36C23C14/3414
Inventor 藤丸笃三村寿文门胁丰虫明克彦
Owner ULVAC INC
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