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Preparing method of nano-rod-shaped indium oxide gas-sensitive material

A nano-rod-shaped, indium gas-sensing technology, which is applied in the field of preparation of indium oxide gas-sensing materials, can solve the problem that nitrogen dioxide gas and hydrogen sulfide gas cannot be detected at the same time, and achieves rapid response recovery, high stability and low working temperature. Effect

Active Publication Date: 2018-08-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned problems or deficiencies, in order to solve the problem that the existing indium oxide gas-sensitive materials cannot detect nitrogen dioxide gas and hydrogen sulfide gas at the same time, the present invention provides a preparation method of nano-rod-shaped indium oxide gas-sensitive materials

Method used

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  • Preparing method of nano-rod-shaped indium oxide gas-sensitive material
  • Preparing method of nano-rod-shaped indium oxide gas-sensitive material
  • Preparing method of nano-rod-shaped indium oxide gas-sensitive material

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Embodiment 1

[0023] Take 1.10 g of indium trichloride tetrahydrate and add it into 50 ml of absolute ethanol to prepare a 0.075 mol / L ethanol solution of indium trichloride. Take 1.50g of sodium hydroxide and add it to 50ml of deionized water to prepare a 0.75mol / L NaOH aqueous solution.

[0024] Take 20mL of the above-mentioned indium trichloride ethanol solution and 20mL of the above-mentioned NaOH aqueous solution and mix, add 0.27g cetyltrimethylammonium bromide (CTAB) (molar ratio InCl 3 4H 2 O:CTAB=5:1), stirred for 1 hour.

[0025] Put the above prepared solution into a 50mL reaction kettle, then put it into a forced air drying oven, set the temperature at 180°C, and react for 12 hours. After the reaction, the obtained white precipitated product was washed with a mixed solution of deionized water and ethanol, and dried in a drying oven at 60° C. for 6 hours to obtain white indium hydroxide powder. The indium hydroxide powder was calcined in a muffle furnace at 500° C. for 2 hours...

Embodiment 2

[0028] Take 3.30 g of indium trichloride tetrahydrate and add it into 50 ml of absolute ethanol to prepare a 0.225 mol / L ethanol solution of indium trichloride. Take 3.0g of sodium hydroxide and add it into 50ml of deionized water to prepare a 1.50mol / L NaOH aqueous solution.

[0029] Take 20 mL of the above indium trichloride ethanol solution and 20 mL of the above NaOH aqueous solution and mix, add 0.60 g of cetyltrimethylammonium bromide (CTAB), and stir for 1 hour.

[0030] Put the above prepared solution into a 50mL reaction kettle, then put it into a forced air drying oven, set the temperature at 150°C, and react for 24 hours. After the reaction, the obtained white precipitated product was washed with a mixed solution of deionized water and ethanol, and dried in a drying oven at 100° C. for 2 hours to obtain white indium hydroxide powder. The indium hydroxide powder was calcined in a muffle furnace at 400° C. for 3 hours to obtain yellow indium oxide powder.

[0031] O...

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Abstract

The invention relates to a preparing method of a nano-rod-shaped indium oxide (In2O3) gas-sensitive material, and belongs to the technical field of preparation of inorganic nanometer functional materials. The preparing method comprises the steps of with indium(III) chloride tetrahydrate being an indium source, by adopting hexadecyl trimethyl ammonium bromide as surface active agent, conducting a hydrothermal reaction under the alkaline condition of sodium hydroxide to prepare indium hydroxide and finally, conducting thermal roasting to obtain the indium oxide gas-sensitive material of a nano-rod-shaped structure. Finally prepared indium oxide is In2O3 with the cubic phase and of the nano-rod-shaped structure, has very good performance of sensing and detecting both nitrogen dioxide gas andhydrogen sulfide gas and is insensitive to other gases (carbon monoxide, ethyl alcohol, ammonia, hydrogen, formaldehyde and the like); the indium oxide also has low working temperature, a quick response and restoration, very high sensitivity, a low detection limit, high selectivity and high stability. Besides, the indium oxide gas-sensitive material can also be used in the fields of catalyst, battery materials, photoelectric materials and the like.

Description

technical field [0001] The invention relates to an indium oxide (In 2 o 3 ) The preparation method of the gas sensitive material belongs to the technical field of inorganic nano functional material preparation. Background technique [0002] At present, people pay more and more attention to environmental pollution, especially toxic and harmful polluting gases, which bring great harm to people's health. Nitrogen dioxide (NO 2 ) and hydrogen sulfide (H 2 S) is a very harmful gas in the environmental pollution gas. At an extremely low concentration (ppm level), it can cause great harm to human health, and even cause death in a short time. Therefore, it is very important to fabricate fast gas sensors for nitrogen dioxide and hydrogen sulfide with high sensitivity and low detection limit. [0003] Indium oxide is an important gas-sensing material used in semiconductor gas sensors. It is widely used in the detection of various toxic and harmful gases, such as nitrogen dioxide,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00B82Y30/00G01N27/04
CPCB82Y30/00C01G15/00C01P2002/72C01P2002/80C01P2004/03C01P2004/16C01P2006/12G01N27/04
Inventor 李志杰闫胜男
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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