46 results about "Indium metal" patented technology

The invention discloses a method for recovering indium from an indium-containing anode bag and indium-containing waste materials, and belongs to the technical field of resource recycling and reutilization. The indium-containing anode bag is pyrolyzed, then a pyrolysis precursor, fused salt and indium-containing waste material powder are evenly mixed and calcined, the anode bag not only contains a large amount of indium but also contains a large amount of carbon element, and therefore the indium-containing anode bag can be recycled. The preparation method comprises the following steps: calcining indium in a calcining furnace, effectively improving the reduction effect and reducing the loss rate of indium metal in the calcining process under the combined action with molten salt, respectively recovering and purifying indium-containing scum and indium alloy, carrying out acid leaching on the indium-containing scum, carrying out selective adsorption and desorption on indium by using resin to obtain an indium-containing solution with low impurity content, distilling the indium alloy, and recycling the indium-containing solution. And crude indium is obtained.

The invention discloses a preparation method of an indium-based metal organic framework heterojunction catalyst with a core-shell structure, which comprises the following steps: simultaneously adding a carboxylic acid ligand and a tetra (4-carboxyphenyl) porphyrin ligand into an organic solvent, and then ultrasonically mixing with a metal indium salt solution uniformly to obtain a purple mixed solution of the metal indium salt and the ligand; the purple mixed solution is subjected to a solvothermal reaction for 4-8 h at the temperature of 100-150 DEG C, then a red wet solid is separated out, and after washing and drying, the obtained red powder is the indium-based metal organic framework material of the core-shell structure, namely the NH2-MIL-68 (In)-In-TCPP heterostructure. The NH2-MIL-68 (In) (at) In-TCPP heterostructure with a core-shell structure is constructed by taking a shared indium metal node as an interface, and meanwhile, the excellent electron transmission performance and relatively high CO2 adsorption and wide spectrum response capability of the tetra (4-carboxyphenyl) porphyrin unit are combined, so that the utilization rate of sunlight and the CO2 photocatalytic conversion efficiency are remarkably improved.

The application relates to a sensor for synchronously detecting enniatin and roquefortine based on a double-potential electrochemiluminescence immunoassay technology as well as a preparation method and a detection method thereof. The sensor comprises a base electrode, a sensing interface composed of a nanocomposite is modified on the surface of the base electrode, mixed coated antigens including ENNs-BSA and AOH-BSA fixed on the sensing interface, mixed probes including a cathode probe and an anode probe, the cathode probe is Zr-Por-MOF-ENNs Ab which is obtained by marking ENNs antibodies with a porphyrin zirconium metal organic framework, the anode probe is Ce-In-MOF@ABEI-AOH Ab which is obtained by marking AOH antibodies with ABEI loaded on a cerium-doped indium metal organic framework, and a detection solution containing a single co-reactant potassium persulfate. The application can realize one-time sample adding, double-potential scanning and synchronous quantification for two kinds of mycotoxins of enniatin and roquefortine.

Provided is a highly reliable semiconductor device. The present invention has a semiconductor layer, an oxide layer, an insulating layer, and a conductive layer. The oxide layer is located between the semiconductor layer and the insulating layer, the conductive layer has a region overlapping the semiconductor layer with the oxide layer and the insulating layer interposed therebetween, the semiconductor layer comprises indium and oxygen, the insulating layer comprises a metal element and oxygen, the oxide layer comprises indium, the metal element, and oxygen, the metal element is an element capable of becoming a trivalent cation, the oxide layer has a region having a film thickness of 0.1-1 nm, and the electron affinity of the oxide layer is less than the electron affinity of the semiconductor layer and greater than the electron affinity of the insulating layer.

The invention discloses a method for preparing high-purity indium from refined indium, and belongs to the technical field of metallurgy. The refined indium is distilled for three times, low-boiling-point impurities Cd, Zn, As, Pb and Bi can be separated and purified, then glycerin, potassium iodide and iodine are used for heat treatment, the Cd impurity can be further separated from indium, then glycerin, ammonium chloride and zinc chloride are used for heat treatment, and the high-purity indium is obtained. According to the method, the Tl impurity can be separated from indium, finally, sodium hydroxide and sodium nitrate are used for heat treatment, Sn, Pb and Fe can be separated from indium, refined indium can be effectively purified through the method, the refined indium is prepared into high-purity indium, the purity of the high-purity indium is 6N, and the content of single impurity metal elements Sb, Sb, Pb and Bi can meet the 7N ultra-high-purity indium metal standard.

The application discloses a preparation method of a core-shell structure indium-based metal organic framework heterojunction catalyst, which comprises the following steps: simultaneously adding carboxylic acid ligands and tetrakis(4-carboxyphenyl)porphyrin ligands into an organic solvent, and then uniformly mixing with a metal indium salt solution under ultrasonic waves to obtain a purple mixed solution of the metal indium salt and the ligands; performing a solvothermal reaction on the purple mixed solution at 100-150 DEG C for 4-8 hours, and then separating a red wet solid, which is washed and dried, and the obtained red powder is a core-shell structure indium-based metal organic framework material, namely, NH2-MIL-68(In)@In-TCPP heterostructure. The NH2-MIL-68(In)@In-TCPP heterostructure with the core-shell structure is constructed by the shared indium metal nodes, meanwhile, the excellent electron transmission performance and the higher CO2 adsorption and wide spectral response capacity of the tetrakis(4-carboxyphenyl)porphyrin unit are combined, so that the utilization rate of sunlight and the CO2 photocatalytic conversion efficiency are significantly improved.

The invention relates to the technical field of comprehensive utilization of dangerous solid waste resources, in particular to a process for extracting multi-metal resources in high-arsenic indium-containing smoke dust, which comprises the following steps: mixing and roasting, obtaining arsenic trioxide and roasting slag, carrying out high-acid leaching treatment on the roasting slag, dissolving indium, and separating lead and bismuth in the roasting slag to obtain a high-indium solution; separating indium and zinc, and performing back extraction; according to the method, the indium-containing waste electrolyte and the high-indium solution are mixed, then the extracting agent is used for extraction, the acidity and the indium concentration of the high-indium solution can be reduced, the extraction recovery rate can be increased, and valuable metal in the waste electrolyte can be recycled. The electrolyte is driven by external force to generate rotational flow, so that the concentration of ions near the electrode is increased under the action of centrifugal force, indium metal is directly obtained, the step of replacing by using zinc powder is omitted, the cost of the indium metal extraction process is reduced, and the extraction efficiency of the indium metal is improved.

The invention relates to the technical field of indium target material preparation, in particular to a high-purity indium target material preparation method which comprises the following steps: step 1, weighing an indium raw material, placing the indium raw material in a mold cavity, and heating to melt the indium raw material; 2, after the raw material indium is in a molten state, ultrasonic treatment is conducted, and impurities and an oxide layer on the surface of indium metal liquid are scraped away; 3, heating is stopped, demolding is conducted, and an indium target plate blank is obtained; 4, the plate blank is rolled; 5, the rolled plate blank is leveled through a pressing block, and rough machining is conducted; and 6, the rough-machined plate blank and a copper back plate are bonded, finish machining is conducted, and the qualified high-purity indium target material is obtained.By means of the method, the problems that the grain size and texture distribution of the high-purity indium target material are not uniform are solved, the indium target material prepared through the method is higher in purity and density, the grain size of the target material is small (the average grain size is smaller than or equal to 60 micrometers), texture distribution is more uniform, and the quality of the target material is improved. Specific crystal orientation can be formed, the sputtering performance of the indium target material is better, and the utilization rate is higher.

The invention relates to a copper-indium bimetallic nanoflower catalyst and a preparation method and application thereof, and belongs to the technical field of electrochemical reduction catalysts. The method comprises the following steps: taking foamed nickel as a substrate, firstly mixing indium sulfate and dilute sulphuric acid to obtain an indium deposition solution, and electrically depositing a layer of metal indium under the indium deposition solution; then copper sulfate and dilute sulfuric acid are mixed to obtain a copper deposition solution, metal copper is further electrically deposited on the foamed nickel loaded with indium metal, the foamed nickel subjected to electro-deposition is cleaned and dried, and the copper-indium bimetallic nanoflower catalyst is obtained. The prepared copper-indium bimetallic nanoflower catalyst is a self-supporting material, shows excellent performance in nitrate radical electroreduction, and is high in ammonia production Faraday efficiency, large in current density and good in ammonia production rate performance. The synthesis method is easy to realize large scale, mild in reaction condition and good in application prospect.

The present invention discloses a method for recovering indium metal from waste liquid crystal displays, belonging to the technical field of resource recovery of waste electronic products. The indium tin oxide glass layer in the waste liquid crystal display is peeled off and pulverized to obtain glass powder; the glass powder is mixed with a sulfurizing agent and calcined at a temperature of 655-750°C under a reducing atmosphere, and the volatiles generated during the calcination process are collected to obtain indium materials. This method can achieve high-selectivity volatilization recovery of indium in waste liquid crystal displays through one-step low-temperature calcination, so as to efficiently separate from impurity elements such as Si, Al, and Mg, in order to obtain high-quality and easily utilizable indium smelting raw materials, and this method has a simple technical route, low cost, and safety, meeting the requirements of industrialization.

The invention relates to the technical field of batteries, in particular to a negative electrode material, a preparation method thereof and a secondary battery. The invention provides a negative electrode material, the negative electrode material is a silicon-based alloy, and the silicon-based alloy comprises silicon, magnesium and indium; in the silicon-based alloy, the mass ratio of the magnesium to the indium is (0.5 to 1.5): (0.5 to 1.5); in the silicon-based alloy, the mass ratio of the magnesium is 8%-25%; the mass ratio of the indium is 8%-25%. According to the negative electrode material, the preparation method thereof and the secondary battery, magnesium and indium are introduced for a silicon-based negative electrode to prepare a ternary alloy, the electronic conductivity can be improved and the silicon expansion rate can be reduced while magnesium and indium metal elements are introduced, and the magnesium and indium metal with high conductivity not only improves the rate capability of the battery, but also enhances the cycling stability of the battery.

The present application relates to the technical field of mineral processing, and particularly relates to a high-efficiency separation process for a refractory indium-poor tin-antimony polymetallic resource, comprising the following steps: polymetallic resource pretreatment, crushing treatment, and separation of the obtained polymetallic particles by a shaking table; magnetic separation coarse screening, preliminary removal of magnetic metals in the crushed polymetallic particles to obtain primary concentrate and tailings; polymetallic particle flotation, mixing the primary concentrate with water, pouring into a flotation tank, and adding an activator, a collector and an inhibitor to obtain a crude metal containing indium, tin and antimony; oxidation and reduction, oxidizing tin and antimony to separate indium metal; vacuum distillation, reducing the tin and antimony oxides into tin and antimony mixed metals, and then feeding the mixed metals into a vacuum distillation device to separate tin and antimony. The present application comprises magnetic separation and vacuum distillation, avoids the need for multiple flotation to separate different metals, improves the environmental friendliness, and reduces the production cost and improves the production efficiency.

The present invention relates to paste compositions comprising an indium metal powder; and an organic vehicle. The organic vehicle includes one or more C8-C18 fatty acids; a salt formed from a C4-C6 carboxylic acid and a tertiary alkanolamine; a cationic catalyst; a thixotrope; and a diluent.

The invention relates to the technical field of preparation of anhydrous indium chloride, in particular to a preparation method of anhydrous indium chloride, which comprises the following steps: (a) providing an indium source and a chlorine source, the indium source being indium metal or indium compound, and the chlorine source being chlorine, hydrogen chloride or organic chloride; and (b) in an anhydrous inert atmosphere, introducing the indium source and the chlorine source into a reactor, controlling the reaction temperature in a range of 100-400, and carrying out a chlorination reaction for 1-10 hours to generate the indium chloride intermediate. According to the preparation method of anhydrous indium chloride, a product with ultra-high purity and stable chlorine content can be stably obtained by effectively inhibiting a hydrolysis reaction, meanwhile, the hygroscopicity of the product is remarkably reduced, and the product is convenient to store and transport. The technological process is mild and controllable, the safety is high, toxic corrosive gas is prevented from being used, and the method has the remarkable advantages of being easy and convenient to operate and environmentally friendly.

This invention discloses a method for preparing an all-solid-state battery and the battery itself. The method involves mixing a positive electrode active material, a conductive agent, and a NaAlCl4 solid electrolyte in a specific weight ratio, followed by grinding and sieving, and then pressing the mixture into a composite positive electrode sheet. NaCl and AlCl3 are mixed in a stoichiometric ratio and subjected to a high-temperature intermelting reaction and mechanical grinding to obtain fine NaAlCl4 solid electrolyte powder. The fine NaAlCl4 solid electrolyte powder is heated to 160°C or higher, and the molten NaAlCl4 solid electrolyte is assembled with the composite positive electrode sheet. After the molten NaAlCl4 solid electrolyte has cooled and solidified, a sodium and / or indium metal negative electrode sheet is heated to a melt, and the other end of the NaAlCl4 solid electrolyte is assembled with the molten negative electrode. Finally, the battery is encapsulated in a battery casing to form an all-solid-state sodium-ion battery. The assembly process of this invention significantly improves the interfacial performance between the positive and negative electrodes and the solid electrolyte.

A method for decreasing the reducibility of indium-containing zinc oxide dust and improving an indium leaching rate. When smelting the hot slag of lead-containing zinc in a side-blow reduction furnace, pulverized coal and limestone are added, and the oxidation atmosphere in the furnace is enhanced by means of three instances of air supply, such that zinc metal is oxidized into zinc oxide, and the reducibility of the produced indium-containing zinc oxide dust is decreased, thereby obtaining indium-containing zinc oxide dust and water-quenched residue. The indium-containing zinc oxide dust is mixed with an acidic solution containing Fe3+ at a liquid-solid ratio of 7-7.25 : 1 for oxidative neutral leaching, so that indium metal in the dust is oxidized and enters a neutrally leached residue to obtain an indium-containing neutrally leached residue and a zinc sulfate solution. The indium-containing neutrally leached residue is mixed with a sulfuric acid solution at a liquid-solid ratio of 3-4 : 1 for high-acid leaching to obtain an indium-containing solution and a lead residue. The indium-containing solution is allowed to enter an indium recovery system, and extraction, refining and electrolysis are performed to obtain a sponge indium.

The invention discloses a method for recovering indium from an indium-containing material, which belongs to the technical field of resource recycling and reutilization, and comprises the following steps: performing sulfating roasting on the high-lead, high-tin, high-zinc and high-sulfur indium-containing material, effectively removing S and chlorine, converting metal into sulfate which is easy to dissolve in water, facilitating subsequent leaching, volatilizing S at the same time, and recovering indium from the indium-containing material. The metal leaching rate is effectively improved; secondary leaching is adopted, the leaching effect can be effectively improved, leaching of lead is promoted, hydrogen sulfide is introduced to convert Sn into precipitates to be removed when indium is in an ionic state, after the pH is adjusted through sodium carbonate, a replacement reaction is conducted, indium metal is effectively replaced, and finally heat treatment is conducted to obtain crude indium.

The invention relates to the technical field of chip packaging, and particularly discloses a preparation method of an indium metal layer, which comprises the following steps: carrying out surface pretreatment on a workpiece, the pretreatment comprising manufacturing a microstructure on the surface of the workpiece, or doping a carbon fiber material on the surface of the workpiece; carrying out electroplating pretreatment on the pretreated workpiece, wherein the electroplating pretreatment comprises washing, oil removal, acid activation and vacuum presoaking; the workpiece subjected to electroplating pretreatment is placed in an electroplating bath containing electroplating liquid through an electroplating clamp to be electroplated till the electroplating duration corresponding to the preset indium metal layer thickness is reached, and a graphical indium metal layer is formed on the surface of the workpiece; in addition, the invention further relates to an electroplating clamp and an electroplating device for the preparation method of the indium metal layer.

The invention provides an electrolytic waste liquid treatment device for metal indium processing, and relates to the technical field of electrolytic waste liquid treatment devices, the electrolytic waste liquid treatment device comprises a first purification assembly and a second purification assembly, the first purification assembly separates out metal elements in waste liquid in an electrolysis mode, and the second purification assembly carries out secondary purification on the waste liquid through a chemical precipitation method; the first purification assembly comprises an electrolytic plate, an electrolytic plate scraping part is arranged above the electrolytic plate, and the electrolytic plate scraping part is provided with a scraper. The device has the beneficial effects that when the scraper moves downwards, the constant contact pressure between the scraper and the plate surface of the electrolytic plate is kept through the mechanical locking mechanism, and it is ensured that electrolytically deposited solid substances are effectively stripped; and when the scraper moves upwards, rigid constraint is relieved in the ascending process, so that the scraper has a self-adaptive avoiding function, and unnecessary collision with residues on the plate surface is avoided. Therefore, the effect that the scrapers scrape off solids adhered to the electrolytic plate can be guaranteed, and invalid collision of the scrapers can be avoided.

This invention relates to a method for enriching indium and tin metals from complex hazardous waste materials, comprising the following steps: (1) Indium and tin content detection of materials: analyzing and detecting the content of indium, tin and other valuable metals in antimony-containing hazardous waste materials; (2) Slag formulation: according to the analysis results of antimony-containing hazardous waste materials, adding iron, silicon and calcium to control the slag formulation range; (3) Controlling the oxygen-carbon ratio; (4) Controlling the height of the molten liquid in the reduction furnace to reduce the ash content and improve the enrichment efficiency of indium and tin metals; (5) Heating the molten material; (6) Reduction smelting to produce a lead-antimony alloy, enriching tin in the alloy and indium in the ash. The method of enriching indium and tin metals from complex hazardous waste materials of this invention improves the recovery rate of tin metal by changing the slag formulation and increasing the liquid level height, utilizing the high iron content in the slag to provide conditions for the reduction of tin metal, and at the same time using the high liquid level to reduce the volatilization of tin metal into the ash, thus enriching indium metal in the ash.

The application discloses a semiconductor chip and a preparation method thereof, a semiconductor packaging structure and a preparation method thereof. The semiconductor chip comprises a chip body, a back surface, a metallization structure layer, and a palladium capping layer. The palladium capping layer is arranged on the side surface of the metallization structure layer away from the chip body. The palladium capping layer is used for bonding with an indium-based thermal interface material to form a palladium-indium intermetallic compound layer. The palladium capping layer in the application reacts with indium to form a palladium-indium intermetallic compound layer. Compared with a brittle and easy-to-crack gold-indium intermetallic compound, the palladium-indium intermetallic compound has slower growth kinetics and better mechanical integrity, can realize lower interface thermal resistance, higher bonding strength, and significantly improve the resistance to thermal cycling and long-term thermal aging. In addition, the process of generating the palladium-indium intermetallic compound by the palladium-indium reaction is slow, so that it can exhibit higher resistance under repeated thermal shock and high-temperature assembly processes.

This invention discloses a method for rigid-flexible interconnection using liquid metal based on patterned indium in-situ doping, belonging to the field of rigid-flexible interconnection technology. The method includes the following steps: Step 1. Preparing a patterned indium conductive material; Step 2. Mixing the patterned indium conductive material with liquid metal for in-situ doping, allowing the patterned indium conductive material to dissolve in-situ in the liquid metal to form an indium-based liquid metal; Step 3. As indium metal diffuses, high-doping concentration regions and low-doping concentration regions of indium metal are formed in the indium-based liquid metal. Rigid leads are immersed in the high-doping concentration region, and the low-doping concentration region is interconnected with the liquid metal wires to form a rigid-flexible interconnection structure. This invention effectively solves the Young's modulus mismatch problem at the interface between rigid chips and flexible circuit systems, increases interconnect reliability, provides high conductivity, and simplifies the fabrication process.

The invention discloses a dry recovery method for waste indium-gallium targets, which comprises the following steps of: crushing the waste indium-gallium targets to obtain waste target particles; the waste target particles and a carbonaceous reducing agent are mixed and added into a reduction furnace to be subjected to a carbon thermal reduction reaction, liquid indium gallium alloy is obtained, then a sodium hydroxide solution is added to be stirred and precipitated, then solid-liquid separation is conducted, a sodium gallate solution and indium-rich metal are obtained, the indium-rich metal is subjected to electrolytic refining, and high-purity refined indium is obtained; the sodium gallate solution is subjected to acidification, impurity removal and hydrolytic precipitation, and gallium hydroxide powder is obtained. The indium-gallium alloy is directly obtained through the carbon thermal reduction reaction, so that metal loss caused by multi-step leaching, separation, replacement and other processes in a wet process is avoided, and the recovery rate is increased; a large amount of strong acid, strong base and organic extractant are not needed, the auxiliary material consumption is small, the price is low, wastewater discharge is reduced, and the recovery cost is reduced; liquid indium gallium alloy passes through the liquid outlet in the bottom of the reduction furnace, full-continuous or semi-continuous batch production is achieved, and the recovery efficiency is high.

The invention discloses a method for removing silver and bismuth in indium by pyrometallurgy, which belongs to the technical field of metal smelting, and comprises the following steps of: heating and reducing a crude indium ingot with high silver and bismuth content in a hydrogen atmosphere to remove interstitial elements O, S, P and the like in the indium metal, and simultaneously, enabling the metal elements to exist in a free elementary substance form; impurity removal in subsequent steps is facilitated; according to the preparation method, bismuth metal serves as a raw material, heating reaction is conducted under the inert gas atmosphere and alkaline materials, the alkaline materials and the bismuth metal can form a compound with the density smaller than that of indium, and therefore the compound floats on the surface and effectively removes bismuth, and the inert gas is introduced so that the contact area can be increased, reaction fire toxicity can be improved, and the bismuth removing effect can be improved; and finally, due to the fact that the solubility of zinc in indium is higher than that of silver, zinc powder is added to replace silver out of indium metal, some slag formers are added, oxidation of the indium metal can be reduced, precipitation and removal of Ag are promoted, and the purity of the indium metal is improved.

The invention belongs to the technical field of metal purification, and discloses high-purity indium and a preparation method thereof.The preparation method comprises the following steps that 1, an indium ingot is smelted to remove impurities; 2, casting the indium ingot subjected to impurity removal in the step 1 into an anode plate, and carrying out electrolytic impurity removal to obtain compact indium metal; 3, compact indium metal is melted and cast into ingots, and reduction zone smelting is carried out under the condition that hydrogen is continuously introduced; 4, after reduction zone smelting is completed, zone smelting impurity removal is conducted under inert gas protection, and high-purity indium is obtained; wherein the introduction flow of the hydrogen in the step 3 is 4-6L / min, the zone melting temperature is 300-400 DEG C, and the reaction is performed for 3-4 hours. According to the preparation method of the high-purity indium provided by the invention, the impurity removal efficiency of the high-purity indium prepared by the method is high, and impurities among crystal lattices deeply hidden in indium ingots can be discharged and removed, so that the purity of the indium is further improved.

The invention discloses a liquid metal rigid-flexible interconnection method based on patterned indium in-situ doping, and belongs to the technical field of rigid-flexible interconnection. The method comprises the following steps: step 1, preparing a patterned indium metal conductive material; step 2, mixing the patterned indium metal conductive material with liquid metal, and carrying out in-situ doping, so that the patterned indium metal conductive material is dissolved in the liquid metal in situ to form indium-based liquid metal; 3, along with diffusion of the indium metal, an indium metal high-doping-concentration area and a low-doping-concentration area are formed in the indium-based liquid metal, the rigid pins are immersed in the high-doping-concentration area and the low-doping-concentration area to be interconnected with the liquid metal wire, and a rigid-flexible interconnection structure is formed. The Young modulus mismatching problem of the rigid chip and the flexible circuit system at the joint interface is well solved, the interconnection reliability is improved, the conductivity is high, and the processing technology is simple.

The invention discloses the technical field of non-ferrous metal smelting, and belongs to the technical field of non-ferrous metal smelting, indium-containing scum reacts with aluminum powder and carbon powder under compressed air, the aluminum powder and the carbon powder can promote antimony, arsenic, tin and the like to form metal oxide alloy under the oxygen-enriched condition, the density of the metal oxide alloy is smaller than that of indium metal, and the metal oxide alloy is not prone to being damaged. Therefore, the indium floating on the surface of the metal liquid effectively prevents loss of indium metal. Hydrogen is introduced for heat treatment and reaction with metal oxides, and elements such as phosphorus, oxygen and sulfur are taken away; through two steps of distillation treatment, low-boiling-point substances (Zn, Cd, As and the like) with relatively high saturated vapor pressure are evaporated and removed in the first step of distillation, and indium metal is volatilized in the second step of distillation, so that high-boiling-point impurities (Sn, Fe, Ni and the like) are remained in a crucible; and finally, molten salt electrolysis is carried out, the anhydrous chloride forms electrolyte, indium ions move towards the cathode to be separated out, and therefore indium metal is purified.

The present invention discloses a tungsten-doped indium oxide target material, its preparation method, and application. Ammonia gas is introduced into an indium metal salt solution to cause a gas-liquid precipitation reaction to produce an indium hydroxide precursor slurry. Solid-liquid separation is then performed to produce indium hydroxide powder. The indium hydroxide powder is calcined to produce indium oxide powder. The indium hydroxide powder, indium oxide powder, and tungsten oxide powder are wet-ball milled to produce a ball mill material. The ball mill material is granulated to produce a granulated powder. The granulated powder is pressed into a green body. The green body is sintered in an oxygen atmosphere to produce an IWO target material with a relative density of 60-64%. The preparation method of the present invention eliminates the need for dispersants and binders and a degreasing step, simplifying the preparation process while facilitating quality control of the target material product. The resulting IWO target material exhibits a uniform porous structure, is resistant to cracking, and exhibits excellent coating properties. The preparation process of the present invention is simple, low-cost, low-carbon, environmentally friendly, and has controllable product performance.

The invention discloses a method for recovering indium from indium-containing wastewater, which belongs to the technical field of resource recycling and reutilization, and comprises the following steps: adding zinc powder into the indium-containing wastewater, reacting under ultrasound, filtering, washing and drying to obtain a precipitate; loading the precipitate into a tubular furnace, introducing hydrogen, carrying out first heat treatment, and then carrying out second heat treatment to obtain an indium alloy; uniformly mixing indium alloy and fused salt, and smelting to obtain an alloy ingot; performing vacuum distillation on the alloy ingot to obtain an indium ingot; and carrying out electrolysis by taking an indium ingot as an anode, a titanium plate as a cathode and indium-containing liquid as electrolyte to obtain refined indium. According to the method, the indium-containing wastewater is subjected to replacement, precipitation and replacement of metal indium under the ultrasonic action, then the indium metal is subjected to high-temperature reduction purification through two times of heat treatment in the presence of hydrogen, indium is purified into refined indium through fused salt smelting distillation and electrolytic refining, the process is short, operation is easy, and the cost is low.

This invention discloses a method for recovering indium metal through carbothermic reduction volatilization, belonging to the field of metal recovery technology in the metallurgical and materials industries. In this invention, indium-containing materials are conveyed to a fuming furnace via a belt conveyor, while hot molten indium-containing slag flows into the fuming furnace for heating via a chute. Powdered coal is carried in by primary air, mixed with secondary air, and then blown into the fuming furnace to generate metal vapor. This vapor volatilizes and, upon contact with tertiary air, generates metal oxide dust. The indium-containing dust is collected by a dust collection device and then sent to the indium leaching process to complete the recovery of indium metal. This invention overcomes the difficulty of indium evaporation of In2O3 by chemically converting it, effectively reducing the residual indium metal in pyrometallurgical slag and significantly improving resource utilization. This invention transforms the difficult-to-recover indium, which was originally retained in the slag, into a volatile form, greatly improving the recovery rate of indium in pyrometallurgical processes and providing an efficient technical path for the resource utilization of indium-containing materials.