25 results about "Indium metal" patented technology

The application relates to a sensor for synchronously detecting enniatin and roquefortine based on a double-potential electrochemiluminescence immunoassay technology as well as a preparation method and a detection method thereof. The sensor comprises a base electrode, a sensing interface composed of a nanocomposite is modified on the surface of the base electrode, mixed coated antigens including ENNs-BSA and AOH-BSA fixed on the sensing interface, mixed probes including a cathode probe and an anode probe, the cathode probe is Zr-Por-MOF-ENNs Ab which is obtained by marking ENNs antibodies with a porphyrin zirconium metal organic framework, the anode probe is Ce-In-MOF@ABEI-AOH Ab which is obtained by marking AOH antibodies with ABEI loaded on a cerium-doped indium metal organic framework, and a detection solution containing a single co-reactant potassium persulfate. The application can realize one-time sample adding, double-potential scanning and synchronous quantification for two kinds of mycotoxins of enniatin and roquefortine.

Provided is a highly reliable semiconductor device. The present invention has a semiconductor layer, an oxide layer, an insulating layer, and a conductive layer. The oxide layer is located between the semiconductor layer and the insulating layer, the conductive layer has a region overlapping the semiconductor layer with the oxide layer and the insulating layer interposed therebetween, the semiconductor layer comprises indium and oxygen, the insulating layer comprises a metal element and oxygen, the oxide layer comprises indium, the metal element, and oxygen, the metal element is an element capable of becoming a trivalent cation, the oxide layer has a region having a film thickness of 0.1-1 nm, and the electron affinity of the oxide layer is less than the electron affinity of the semiconductor layer and greater than the electron affinity of the insulating layer.

The invention relates to the technical field of comprehensive utilization of dangerous solid waste resources, in particular to a process for extracting multi-metal resources in high-arsenic indium-containing smoke dust, which comprises the following steps: mixing and roasting, obtaining arsenic trioxide and roasting slag, carrying out high-acid leaching treatment on the roasting slag, dissolving indium, and separating lead and bismuth in the roasting slag to obtain a high-indium solution; separating indium and zinc, and performing back extraction; according to the method, the indium-containing waste electrolyte and the high-indium solution are mixed, then the extracting agent is used for extraction, the acidity and the indium concentration of the high-indium solution can be reduced, the extraction recovery rate can be increased, and valuable metal in the waste electrolyte can be recycled. The electrolyte is driven by external force to generate rotational flow, so that the concentration of ions near the electrode is increased under the action of centrifugal force, indium metal is directly obtained, the step of replacing by using zinc powder is omitted, the cost of the indium metal extraction process is reduced, and the extraction efficiency of the indium metal is improved.

The invention relates to the technical field of indium target material preparation, in particular to a high-purity indium target material preparation method which comprises the following steps: step 1, weighing an indium raw material, placing the indium raw material in a mold cavity, and heating to melt the indium raw material; 2, after the raw material indium is in a molten state, ultrasonic treatment is conducted, and impurities and an oxide layer on the surface of indium metal liquid are scraped away; 3, heating is stopped, demolding is conducted, and an indium target plate blank is obtained; 4, the plate blank is rolled; 5, the rolled plate blank is leveled through a pressing block, and rough machining is conducted; and 6, the rough-machined plate blank and a copper back plate are bonded, finish machining is conducted, and the qualified high-purity indium target material is obtained.By means of the method, the problems that the grain size and texture distribution of the high-purity indium target material are not uniform are solved, the indium target material prepared through the method is higher in purity and density, the grain size of the target material is small (the average grain size is smaller than or equal to 60 micrometers), texture distribution is more uniform, and the quality of the target material is improved. Specific crystal orientation can be formed, the sputtering performance of the indium target material is better, and the utilization rate is higher.

The invention relates to a copper-indium bimetallic nanoflower catalyst and a preparation method and application thereof, and belongs to the technical field of electrochemical reduction catalysts. The method comprises the following steps: taking foamed nickel as a substrate, firstly mixing indium sulfate and dilute sulphuric acid to obtain an indium deposition solution, and electrically depositing a layer of metal indium under the indium deposition solution; then copper sulfate and dilute sulfuric acid are mixed to obtain a copper deposition solution, metal copper is further electrically deposited on the foamed nickel loaded with indium metal, the foamed nickel subjected to electro-deposition is cleaned and dried, and the copper-indium bimetallic nanoflower catalyst is obtained. The prepared copper-indium bimetallic nanoflower catalyst is a self-supporting material, shows excellent performance in nitrate radical electroreduction, and is high in ammonia production Faraday efficiency, large in current density and good in ammonia production rate performance. The synthesis method is easy to realize large scale, mild in reaction condition and good in application prospect.

The invention relates to the technical field of batteries, in particular to a negative electrode material, a preparation method thereof and a secondary battery. The invention provides a negative electrode material, the negative electrode material is a silicon-based alloy, and the silicon-based alloy comprises silicon, magnesium and indium; in the silicon-based alloy, the mass ratio of the magnesium to the indium is (0.5 to 1.5): (0.5 to 1.5); in the silicon-based alloy, the mass ratio of the magnesium is 8%-25%; the mass ratio of the indium is 8%-25%. According to the negative electrode material, the preparation method thereof and the secondary battery, magnesium and indium are introduced for a silicon-based negative electrode to prepare a ternary alloy, the electronic conductivity can be improved and the silicon expansion rate can be reduced while magnesium and indium metal elements are introduced, and the magnesium and indium metal with high conductivity not only improves the rate capability of the battery, but also enhances the cycling stability of the battery.

The present application relates to the technical field of mineral processing, and particularly relates to a high-efficiency separation process for a refractory indium-poor tin-antimony polymetallic resource, comprising the following steps: polymetallic resource pretreatment, crushing treatment, and separation of the obtained polymetallic particles by a shaking table; magnetic separation coarse screening, preliminary removal of magnetic metals in the crushed polymetallic particles to obtain primary concentrate and tailings; polymetallic particle flotation, mixing the primary concentrate with water, pouring into a flotation tank, and adding an activator, a collector and an inhibitor to obtain a crude metal containing indium, tin and antimony; oxidation and reduction, oxidizing tin and antimony to separate indium metal; vacuum distillation, reducing the tin and antimony oxides into tin and antimony mixed metals, and then feeding the mixed metals into a vacuum distillation device to separate tin and antimony. The present application comprises magnetic separation and vacuum distillation, avoids the need for multiple flotation to separate different metals, improves the environmental friendliness, and reduces the production cost and improves the production efficiency.

The present invention relates to paste compositions comprising an indium metal powder; and an organic vehicle. The organic vehicle includes one or more C8-C18 fatty acids; a salt formed from a C4-C6 carboxylic acid and a tertiary alkanolamine; a cationic catalyst; a thixotrope; and a diluent.

The invention relates to the technical field of preparation of anhydrous indium chloride, in particular to a preparation method of anhydrous indium chloride, which comprises the following steps: (a) providing an indium source and a chlorine source, the indium source being indium metal or indium compound, and the chlorine source being chlorine, hydrogen chloride or organic chloride; and (b) in an anhydrous inert atmosphere, introducing the indium source and the chlorine source into a reactor, controlling the reaction temperature in a range of 100-400, and carrying out a chlorination reaction for 1-10 hours to generate the indium chloride intermediate. According to the preparation method of anhydrous indium chloride, a product with ultra-high purity and stable chlorine content can be stably obtained by effectively inhibiting a hydrolysis reaction, meanwhile, the hygroscopicity of the product is remarkably reduced, and the product is convenient to store and transport. The technological process is mild and controllable, the safety is high, toxic corrosive gas is prevented from being used, and the method has the remarkable advantages of being easy and convenient to operate and environmentally friendly.

This invention discloses a method for preparing an all-solid-state battery and the battery itself. The method involves mixing a positive electrode active material, a conductive agent, and a NaAlCl4 solid electrolyte in a specific weight ratio, followed by grinding and sieving, and then pressing the mixture into a composite positive electrode sheet. NaCl and AlCl3 are mixed in a stoichiometric ratio and subjected to a high-temperature intermelting reaction and mechanical grinding to obtain fine NaAlCl4 solid electrolyte powder. The fine NaAlCl4 solid electrolyte powder is heated to 160°C or higher, and the molten NaAlCl4 solid electrolyte is assembled with the composite positive electrode sheet. After the molten NaAlCl4 solid electrolyte has cooled and solidified, a sodium and / or indium metal negative electrode sheet is heated to a melt, and the other end of the NaAlCl4 solid electrolyte is assembled with the molten negative electrode. Finally, the battery is encapsulated in a battery casing to form an all-solid-state sodium-ion battery. The assembly process of this invention significantly improves the interfacial performance between the positive and negative electrodes and the solid electrolyte.

A method for decreasing the reducibility of indium-containing zinc oxide dust and improving an indium leaching rate. When smelting the hot slag of lead-containing zinc in a side-blow reduction furnace, pulverized coal and limestone are added, and the oxidation atmosphere in the furnace is enhanced by means of three instances of air supply, such that zinc metal is oxidized into zinc oxide, and the reducibility of the produced indium-containing zinc oxide dust is decreased, thereby obtaining indium-containing zinc oxide dust and water-quenched residue. The indium-containing zinc oxide dust is mixed with an acidic solution containing Fe3+ at a liquid-solid ratio of 7-7.25 : 1 for oxidative neutral leaching, so that indium metal in the dust is oxidized and enters a neutrally leached residue to obtain an indium-containing neutrally leached residue and a zinc sulfate solution. The indium-containing neutrally leached residue is mixed with a sulfuric acid solution at a liquid-solid ratio of 3-4 : 1 for high-acid leaching to obtain an indium-containing solution and a lead residue. The indium-containing solution is allowed to enter an indium recovery system, and extraction, refining and electrolysis are performed to obtain a sponge indium.

The invention relates to the technical field of chip packaging, and particularly discloses a preparation method of an indium metal layer, which comprises the following steps: carrying out surface pretreatment on a workpiece, the pretreatment comprising manufacturing a microstructure on the surface of the workpiece, or doping a carbon fiber material on the surface of the workpiece; carrying out electroplating pretreatment on the pretreated workpiece, wherein the electroplating pretreatment comprises washing, oil removal, acid activation and vacuum presoaking; the workpiece subjected to electroplating pretreatment is placed in an electroplating bath containing electroplating liquid through an electroplating clamp to be electroplated till the electroplating duration corresponding to the preset indium metal layer thickness is reached, and a graphical indium metal layer is formed on the surface of the workpiece; in addition, the invention further relates to an electroplating clamp and an electroplating device for the preparation method of the indium metal layer.

This invention relates to a method for enriching indium and tin metals from complex hazardous waste materials, comprising the following steps: (1) Indium and tin content detection of materials: analyzing and detecting the content of indium, tin and other valuable metals in antimony-containing hazardous waste materials; (2) Slag formulation: according to the analysis results of antimony-containing hazardous waste materials, adding iron, silicon and calcium to control the slag formulation range; (3) Controlling the oxygen-carbon ratio; (4) Controlling the height of the molten liquid in the reduction furnace to reduce the ash content and improve the enrichment efficiency of indium and tin metals; (5) Heating the molten material; (6) Reduction smelting to produce a lead-antimony alloy, enriching tin in the alloy and indium in the ash. The method of enriching indium and tin metals from complex hazardous waste materials of this invention improves the recovery rate of tin metal by changing the slag formulation and increasing the liquid level height, utilizing the high iron content in the slag to provide conditions for the reduction of tin metal, and at the same time using the high liquid level to reduce the volatilization of tin metal into the ash, thus enriching indium metal in the ash.

The application discloses a semiconductor chip and a preparation method thereof, a semiconductor packaging structure and a preparation method thereof. The semiconductor chip comprises a chip body, a back surface, a metallization structure layer, and a palladium capping layer. The palladium capping layer is arranged on the side surface of the metallization structure layer away from the chip body. The palladium capping layer is used for bonding with an indium-based thermal interface material to form a palladium-indium intermetallic compound layer. The palladium capping layer in the application reacts with indium to form a palladium-indium intermetallic compound layer. Compared with a brittle and easy-to-crack gold-indium intermetallic compound, the palladium-indium intermetallic compound has slower growth kinetics and better mechanical integrity, can realize lower interface thermal resistance, higher bonding strength, and significantly improve the resistance to thermal cycling and long-term thermal aging. In addition, the process of generating the palladium-indium intermetallic compound by the palladium-indium reaction is slow, so that it can exhibit higher resistance under repeated thermal shock and high-temperature assembly processes.

This invention discloses a method for rigid-flexible interconnection using liquid metal based on patterned indium in-situ doping, belonging to the field of rigid-flexible interconnection technology. The method includes the following steps: Step 1. Preparing a patterned indium conductive material; Step 2. Mixing the patterned indium conductive material with liquid metal for in-situ doping, allowing the patterned indium conductive material to dissolve in-situ in the liquid metal to form an indium-based liquid metal; Step 3. As indium metal diffuses, high-doping concentration regions and low-doping concentration regions of indium metal are formed in the indium-based liquid metal. Rigid leads are immersed in the high-doping concentration region, and the low-doping concentration region is interconnected with the liquid metal wires to form a rigid-flexible interconnection structure. This invention effectively solves the Young's modulus mismatch problem at the interface between rigid chips and flexible circuit systems, increases interconnect reliability, provides high conductivity, and simplifies the fabrication process.

The invention discloses a dry recovery method for waste indium-gallium targets, which comprises the following steps of: crushing the waste indium-gallium targets to obtain waste target particles; the waste target particles and a carbonaceous reducing agent are mixed and added into a reduction furnace to be subjected to a carbon thermal reduction reaction, liquid indium gallium alloy is obtained, then a sodium hydroxide solution is added to be stirred and precipitated, then solid-liquid separation is conducted, a sodium gallate solution and indium-rich metal are obtained, the indium-rich metal is subjected to electrolytic refining, and high-purity refined indium is obtained; the sodium gallate solution is subjected to acidification, impurity removal and hydrolytic precipitation, and gallium hydroxide powder is obtained. The indium-gallium alloy is directly obtained through the carbon thermal reduction reaction, so that metal loss caused by multi-step leaching, separation, replacement and other processes in a wet process is avoided, and the recovery rate is increased; a large amount of strong acid, strong base and organic extractant are not needed, the auxiliary material consumption is small, the price is low, wastewater discharge is reduced, and the recovery cost is reduced; liquid indium gallium alloy passes through the liquid outlet in the bottom of the reduction furnace, full-continuous or semi-continuous batch production is achieved, and the recovery efficiency is high.

This invention discloses a method for recovering indium metal through carbothermic reduction volatilization, belonging to the field of metal recovery technology in the metallurgical and materials industries. In this invention, indium-containing materials are conveyed to a fuming furnace via a belt conveyor, while hot molten indium-containing slag flows into the fuming furnace for heating via a chute. Powdered coal is carried in by primary air, mixed with secondary air, and then blown into the fuming furnace to generate metal vapor. This vapor volatilizes and, upon contact with tertiary air, generates metal oxide dust. The indium-containing dust is collected by a dust collection device and then sent to the indium leaching process to complete the recovery of indium metal. This invention overcomes the difficulty of indium evaporation of In2O3 by chemically converting it, effectively reducing the residual indium metal in pyrometallurgical slag and significantly improving resource utilization. This invention transforms the difficult-to-recover indium, which was originally retained in the slag, into a volatile form, greatly improving the recovery rate of indium in pyrometallurgical processes and providing an efficient technical path for the resource utilization of indium-containing materials.

The present technology relates generally to secondary electrochemical cells, and methods of making and using secondary electrochemical cells. The electrochemical cells include an anode, a cathode, and an electrolyte. The anode includes indium metal or an indium alloy. The electrolyte includes an indium (III) salt and water or tetrahydrofuran (THF) solvent.

The present invention relates to the recovery of indium metal from indium tin oxide (ITO) coated glass surfaces by an electrochemical method.

The invention relates to a method and a structure for preventing indium metal sputtering pollution in a laser resonant cavity, and belongs to the technical field of high repetition frequency solid lasers. The method comprises the following steps: arranging a red glass sheet on the outer side of the end part of the laser crystal, and covering and sealing an indium metal layer for fixing the crystal. The red glass sheet has high transmissivity for 1064nm laser, can effectively prevent indium metal from volatilizing to pollute optical elements after being irradiated by the laser, and can also prevent scattered laser from being reflected back to a resonant cavity to influence the quality of light beams. The laser is simple and reliable in structure, is suitable for laser systems requiring long-term high-reliability work, such as a diode-pumped solid laser, and can significantly improve the output stability and the service life of the laser.

The application discloses a kind of vacuum distillation device for preparing superhigh purity indium ball, including vacuum distillation furnace body and cover plate, cover plate is installed support frame, support frame hoisting has distillation condensing cover, multiple metal partitions are arranged in distillation condensing cover, the bottom layer metal partition is inserted with riser, the lower end of riser is sequentially connected with conical disc, sleeve and graphite crucible, heating coil is installed outside graphite crucible, and base is arranged in lower part.In addition, the application also provides a kind of vacuum distillation method for preparing superhigh purity indium ball, and the superhigh purity indium ball is obtained on metal partition and the inner wall of distillation condensing cover by vacuum distillation of indium metal.The indium steam generated by heating indium metal is introduced into distillation condensing cover by setting riser, conical disc and sleeve, and the indium ball formed by condensation is collected by distillation condensing cover and multiple metal partitions arranged therein, which increases the number of superhigh purity indium ball prepared, improves yield, and facilitates the indium ball to be taken out, the preparation cycle is short, and the labor cost is low.

The invention provides a heat dissipation gasket, a preparation method thereof and a chip packaging structure, and relates to the technical field of microelectronic packaging. The preparation method of the heat dissipation gasket comprises the following steps: providing a porous base material; soaking the porous base material in molten indium in an inert atmosphere; after the porous base material is fully infiltrated, the porous base material infiltrated with indium is taken out and cooled, and an initial heat dissipation gasket is obtained; and carrying out rolling treatment on the initial heat dissipation gasket to obtain the heat dissipation gasket. According to the heat dissipation gasket, through the capillary constraint effect of the porous base material on indium, the situation that air enters the molten indium metal to form bubbles in the follow-up backflow technological process can be reduced, the heat dissipation effect is prevented from being deteriorated, and the probability of corrosion and short circuit caused by the fact that indium leaks to other positions due to the pumping-out effect caused by temperature changes can be reduced.

The application relates to an electric circulating pump based on gallium-indium liquid metal droplets and a use method thereof, and relates to the technical field of microfluidics.The application is to solve the problems that the existing liquid metal pump adopts a direct current electric field, liquid metal droplets are prone to strong oxidation, and the pumping direction cannot be changed after the electric field direction is fixed.The mainboard is provided with two flow channels, a droplet cavity and two electrode grooves, the two flow channels are communicated through the droplet cavity, the two electrode grooves are located on the two sides of the droplet cavity and are communicated with the two flow channels respectively, the gallium-indium metal droplets are located in the droplet cavity, the two electrodes are located in the two electrode grooves respectively, the two flow channels are used for bearing the driven fluid, and alternating current and direct current pulse signals can be simultaneously applied to the two electrodes.

The application provides a water-based eutectic electrolyte, which comprises an indium salt, water and an organic solvent. The metal salt, the organic solvent and the water are mixed in a certain proportion to form the eutectic electrolyte. The activity of water in the electrolyte is reduced, the hydrogen evolution / oxygen evolution reaction in the electrode reaction is inhibited, and the conductivity of the electrolyte is improved, so that the overpotential of the indium negative electrode peeling / deposition is reduced, and the stability and cycle life of the battery are improved. The water-based metal battery prepared from the water-based eutectic electrolyte has a cycle life of more than 1500 h, and can also be stably cycled for more than 700 h under the condition of 0 DEG C. The application breaks through the bottleneck of the traditional electrolyte in the cycle stability and low-temperature performance, provides a new scheme for the development of a new type of metal battery with low-temperature resistance and high environmental adaptability, and has a good application prospect.

The invention discloses a method for refining indium from an indium-containing target material by using a vacuum refining technology, and belongs to the technical field of non-ferrous metal vacuum metallurgy, and the method comprises the following steps: step 1, crushing the indium-containing target material, and adding a reducing agent to prepare an indium-containing mixture; 2, the indium-containing mixture is added into a reduction furnace and heated to be subjected to a reduction reaction, and indium-containing alloy is generated; 3, the indium-containing alloy is added into a vacuum graphitization furnace for primary distillation, and primary crude indium and a crude indium alloy are prepared; 4, the primary crude indium is added into a vacuum graphitization furnace for secondary distillation, and refined indium and secondary crude indium are prepared; step 5, returning the prepared crude indium alloy and secondary crude indium to the step 3 for continuous circulation; according to the method, refined indium can be directly obtained, the metal value yield can reach 99%, electrolysis is not needed, and the time is shortened by half compared with the electrolysis period.