Preparation method of planar copper-indium-gallium-selenium sputtering target material

A copper indium gallium selenide and sputtering target technology, which is applied in the field of preparation of sodium-doped molybdenum planar sputtering targets, can solve the problems of high cost and low conversion efficiency of copper indium gallium selenide thin films, and achieve low cost and reduced Production cost, effect of high conductivity

Inactive Publication Date: 2013-07-24
无锡舒玛天科新能源技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing two-step sputtering method usually uses copper gallium or copper / gallium target and indium target as the back electrode, and the copper indium gallium selenium thin film produced has low conversion efficiency and high cost

Method used

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  • Preparation method of planar copper-indium-gallium-selenium sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Planar Copper Indium Gallium Selenium Sputtering Target, Cu-In-Ga-Se Composed of Copper, Indium, Gallium and Selenium 2 Quaternary alloy system, in which the atomic ratio of copper, indium, gallium and selenium is 25:17.5:7.5:50.

[0021] Its preparation method comprises the following steps:

[0022] (1) Put copper with a purity of 99.999%, indium with a purity of 99.999%, gallium with a purity of 99.999%, and selenium with a purity of 99.999% in an atomic ratio of 25:17.5:7.5:50 in a planetary ball mill jar, and Add balls, wherein the ratio of the total mass of copper, indium, gallium and selenium to the total mass of balls added in the planetary ball mill is 1:10. Ball mill for 30 minutes under the protection of argon. The rotation speed of the planetary ball mill jar is 100rpm, and the revolution speed is 200rpm. Pass through a sieve with a pore size of 20 μm to obtain a mixed powder;

[0023] (2) Put the mixed powder in a graphite mold and press it in a hot press ...

Embodiment 2

[0025] Planar Copper Indium Gallium Selenium Sputtering Target, Cu-In-Ga-Se Composed of Copper, Indium, Gallium and Selenium 2 Quaternary alloy system, in which the atomic ratio of copper, indium, gallium and selenium is 20:10:12.5:60.

[0026] Its preparation method comprises the following steps:

[0027] (1) Put copper with a purity of 99.999%, indium with a purity of 99.999%, gallium with a purity of 99.999%, and selenium with a purity of 99.999% in an atomic ratio of 20:10:12.5:60 in a planetary ball mill jar, and Add balls, wherein the ratio of the total mass of copper, indium, gallium and selenium to the total mass of balls added in the planetary ball mill is 1:100. Under the protection of argon, the ball mill is 180min. The rotation speed of the planetary ball mill jar is 400rpm, and the revolution speed is 700rpm. Pass through a sieve with a pore size of 120 μm to obtain a mixed powder;

[0028] (2) Put the mixed powder in a graphite mold and press it in a hot press ...

Embodiment 3

[0030] Planar Copper Indium Gallium Selenium Sputtering Target, Cu-In-Ga-Se Composed of Copper, Indium, Gallium and Selenium 2 Quaternary alloy system, in which the atomic ratio of copper, indium, gallium and selenium is 22.5:19:6:55.

[0031] Its preparation method comprises the following steps:

[0032] (1) Put copper with a purity of 99.999%, indium with a purity of 99.999%, gallium with a purity of 99.999%, and selenium with a purity of 99.999% at an atomic ratio of 22.5:14:11:47.5 in a planetary ball mill jar, and Adding balls, the ratio of the total mass of copper, indium, gallium and selenium to the total mass of balls added in the planetary ball mill is 1:50. Ball milling for 100min under the protection of argon, the rotation speed of the planetary ball mill tank is 250rpm, and the revolution speed is 450rpm. Pass through a sieve with an aperture of 80 μm to obtain a mixed powder;

[0033] (2) Put the mixed powder in a graphite mold and press it in a hot press under ...

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Abstract

The invention provides a planar copper-indium-gallium-selenium sputtering target material which is a Cu-In-Ga-Se2 quaternary alloy system composed of copper, indium, gallium, and selenium with an atomic ratio of (20-25): (10-19): (6-12.5): (50-60). The invention also provides a preparation method of the planar copper-indium-gallium-selenium sputtering target material. The target material is the Cu-In-Ga-Se2 quaternary alloy system composed of copper, indium, gallium, and selenium. With the target material, copper-indium-gallium-selenium film battery production cost can be greatly reduced, and copper-indium-gallium-selenium film battery production can be greatly industrialized. According to the target material preparation method, high-purity metals copper, indium, gallium, and selenium are adopted as raw materials, and processes such as ball milling, sieving, hot pressing, and the like are carried out, such that the planar copper-indium-gallium-selenium sputtering target material is obtained. The process is simple, the cost is low, and the method is suitable for industrialized productions. The prepared target material has a relative density up to 89% or higher, oxygen density up to 150-250ppm, and conductivity up to 50-80 ohmcm. The size of the material can be 40-100 micrometers.

Description

technical field [0001] The invention belongs to the field of solar energy application equipment, and in particular relates to a preparation method of a sodium-doped molybdenum planar sputtering target. Background technique [0002] Manufacturing of solar panels has expanded rapidly over the past few decades. In 2011, the growth rate of the solar energy industry in the United States was as high as 109%, which is second to none in the field of new energy technologies. Copper indium gallium selenide thin film solar cells are developing rapidly in the field of solar panels, which are usually provided with a molybdenum layer, copper indium gallium selenide thin film absorber layer, cadmium sulfide buffer layer, Intrinsic zinc oxide, aluminum-zinc oxide window layer and surface contact layer. At present, except for the CIGS thin-film absorber layer, other parts are basically standardized, and the CIGS thin-film absorber layer is the core of the quality of CIGS thin-film batterie...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/34B22F3/02
CPCC23C14/0623C23C14/3414
Inventor 徐从康
Owner 无锡舒玛天科新能源技术有限公司
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