Preparation method of indium tin oxide precusor size and ITO thin film

The technology of indium tin oxide and indium tin hydroxide is applied in the field of indium tin oxide precursor slurry, which can solve the problems of high preparation cost, high cost, high vacuum degree and the like, and achieve the effect of uniform and flat film surface

Inactive Publication Date: 2006-11-29
BEIJING UNIV OF CHEM TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The industry mainly uses the magnetron sputtering method, which requires a high degree of vacuum, and the requirements for the ITO target are very strict, and the target utilization rate is lower than 50%, and the cost i

Method used

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  • Preparation method of indium tin oxide precusor size and ITO thin film
  • Preparation method of indium tin oxide precusor size and ITO thin film
  • Preparation method of indium tin oxide precusor size and ITO thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Weigh 1.435 grams of metal indium and add it to concentrated nitric acid to dissolve, weigh 0.451 grams of SnCl 4 ·5H 2 Dissolve O in deionized water, then mix the two solutions to obtain a solution with a metal ion concentration of 0.1-2.0 mol / L, add 0.5%-20% PEG, after it is completely dissolved, add ammonia water dropwise under stirring until it becomes alkaline , aging for a period of time; then wash the precipitate with deionized water until there are no other impurity ions, centrifuge, then soak the washed indium tin hydroxide with absolute ethanol for 3 times, add absolute ethanol and a small amount of acetic acid, ethanolamine , Tween and PVP to prepare the indium tin oxide precursor slurry.

Embodiment 2

[0016] Weigh 2.296 grams of metal indium and add it to concentrated nitric acid to dissolve, weigh 0.718 grams of SnCl 4 ·5H 2 O was dissolved in deionized water, and then the two solutions were mixed to obtain In 3+ For a solution with a concentration of 0.1-2.0mol / L, add 0.5%-20% Tween, after it is completely dissolved, add ammonium carbonate solution dropwise under stirring until alkaline, and age for a period of time; then wash the precipitate with deionized water Centrifuge until there are no other impurity ions, then soak and wash the indium tin hydroxide with absolute ethanol for 3 times, add isopropanol and a small amount of acetic acid, PEG, ethanolamine and PVP to stir to obtain the indium tin oxide precursor slurry .

Embodiment 3

[0018] Weigh 2.296 grams of metal indium and dissolve it in concentrated nitric acid, weigh 0.243 grams of metal tin and dissolve it in hydrochloric acid, then mix the two solutions to obtain a solution with a metal ion concentration of 0.1 to 2.0 mol / L, and add 0.5% to 20% of After PEG is completely dissolved, add urea solution dropwise under stirring until it becomes alkaline, and age for a period of time; then wash the precipitate with deionized water until there are no other impurity ions, separate it by centrifugation, and then soak the washed indium with absolute ethanol tin hydroxide 3 times, adding absolute ethanol and a small amount of acetic acid, PEG, ethanolamine, Tween and PVP and stirring to prepare indium tin oxide precursor slurry.

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Abstract

A process for preparing the precursor slurry of indium tin oxide (ITO) includes such steps as dissolving In and Sn in strong acid respectively or dissolving the soluble In salt and Sn salt in water respectively, mixing, stirring while adding precipitant to obtain InSn deposit, washing with deionized water, adding disperser and precipitant to obtain the colloid deposit of indium tin hydroxide (or carbonate), and adding alcohol and additive to obtain the target slurry. An ITO film is prepared through coating said slurry on the glass plate and calcining.

Description

technical field [0001] The invention relates to the preparation technology of an indium tin oxide precursor slurry and an indium tin oxide film that can be used as transparency and conductivity. Background technique [0002] Indium tin oxide (indium-tin-oxide referred to as ITO) or tin-doped indium oxide (tin-dopedindium oxide) is a transparent electrode material. ITO film has good electrical conductivity and transparency to visible light, and its film layer is wear-resistant, acid and alkali resistant, corrosion resistant and easy to etch. It is widely used in industry and plays an important role in high-tech fields. It is mainly used for flat display such as liquid crystal display (LCD), electrochromic display (ECD), sensor, electrochromic (EC) smart window, solar cell , Demister windows and antistatic coatings and heated glass, etc. [0003] The preparation method of existing transparent conductive ITO film is more, mainly adopts magnetron sputtering method (CN2516564Y)...

Claims

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Application Information

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IPC IPC(8): C03C17/23C03C17/25
Inventor 刘家祥甘勇王海宁李承威
Owner BEIJING UNIV OF CHEM TECH
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