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A kind of indium phosphobismuth material and its preparation method, laser using the material and its preparation method

A technology of indium phosphobismuth and indium phosphide bismuth, which is applied in the field of materials science, can solve the problems of inability to improve semiconductor performance, limit, narrow band gap, etc., and achieve suppression of Auger recombination effect, increase of spin-orbit splitting, The effect of good semiconductor performance

Active Publication Date: 2019-02-12
CHAOJING TECH BEIJING CO LTD
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  • Application Information

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Problems solved by technology

However, indium phosphide also has the following defects: although its band gap is very narrow, it is also limited.
That is to say, the band gap of indium phosphide cannot continue to narrow after being narrowed to a certain extent, nor can it continue to improve its semiconductor performance.

Method used

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  • A kind of indium phosphobismuth material and its preparation method, laser using the material and its preparation method
  • A kind of indium phosphobismuth material and its preparation method, laser using the material and its preparation method
  • A kind of indium phosphobismuth material and its preparation method, laser using the material and its preparation method

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Embodiment Construction

[0048] Please refer to figure 1 , in this embodiment, the indium phosphide bismuth material includes: an indium phosphide substrate 10 , an indium phosphide buffer layer 20 and an indium phosphide bismuth body 30 . Wherein the indium phosphide buffer layer 20 is disposed on the indium phosphide substrate. The indium phosphide bismuth body 30 is disposed on the indium phosphide buffer layer 20 . The chemical formula of indium phosphobismuth bulk is InP 1-x Bi x , where x is the concentration percentage of bismuth atoms, and 3.6≤x≤12.5%. In other embodiments of the present application, the indium phosphide substrate may also be other auxiliary substrates.

[0049] Please refer to figure 2 , in this embodiment, the preparation method of indium phosphide bismuth material comprises the following steps:

[0050] S1: An indium phosphide buffer layer is formed on an indium phosphide substrate by molecular beam epitaxy or metal-organic vapor deposition.

[0051] S2: Form an ind...

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Abstract

The invention relates to the field of materials, in particular to an indium phosphate bismuth material and a preparation method thereof, a laser using the indium phosphate bismuth material and a production method of the laser. The indium phosphate bismuth material comprises an indium phosphate substrate, an indium phosphate buffer layer arranged on the indium phosphate substrate and an indium phosphate bismuth body arranged on the indium phosphate buffer layer; the chemical formula of the indium phosphate bismuth body is: InP1-xBix, wherein x is percent concentration of bismuth atoms, 0 is smaller than x smaller than or equal to 12.5%. The indium phosphate bismuth material is small in forbidden bandwidth, easy to grow and stable.

Description

technical field [0001] The invention relates to the field of material science, in particular to an indium phosphide bismuth material. Background technique [0002] III-V semiconductor materials are widely used in the fields of lasers, photoelectric tubes and optical fiber communications. Among them, narrow bandgap materials have great advantages in the fields of microelectronics and optoelectronics as substrates for high-speed electronics and optoelectronic devices, and are also very suitable for vertical optical field lasers and high electron carrier transistors. Taking indium phosphide as an example, it has a narrow band gap and high semiconductor performance. However, indium phosphide also has the following disadvantages: although its band gap is very narrow, it also has a limit. That is, the band gap of indium phosphide cannot continue to be narrowed after being narrowed to a certain extent, nor can it continue to improve its semiconductor performance. Contents of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/30
Inventor 梁丹王庶民张丽
Owner CHAOJING TECH BEIJING CO LTD
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