Indium-phosphorus-nitrogen-bismuth material, preparation method thereof, laser and detector using indium-phosphorus-nitrogen-bismuth material, and preparation method for laser and detector
A technology of indium, phosphorus, bismuth, and bismuth nitrogen, which is applied in the field of materials science, can solve the problems of no way to greatly improve semiconductor performance, difficulty in doping N atoms, and narrowing, so as to suppress the Auger recombination effect and increase The effect of large spin-orbit splitting and good semiconductor performance
Active Publication Date: 2018-03-06
CHAOJING TECH BEIJING CO LTD
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Problems solved by technology
However, when nitrogen (N) atoms are doped, as the N component increases, the bond length of indium nitrogen (In-N) tends to increase, and the bond length of indium phosphorus (In-P) tends to decrease, so that In- The difference between N bond len
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[0069] Please refer to figure 1 In this embodiment, the indium phosphate nitride bismuth material includes an indium phosphide substrate 10, an indium phosphide buffer layer 20, and an indium phosphate nitride body 30. The indium phosphide buffer layer 20 is arranged on the indium phosphide substrate. The indium bismuth phosphate nitride body 30 is disposed on the indium phosphide buffer layer 20. The chemical formula of indium phosphate nitrogen bismuth body is InP 1-x-y N x Bi y , Where x and y are the percentages of the concentration of N atoms and bismuth atoms, and 0
[0070] Please refer to figure 2 In this embodiment, the preparation method of indium, phosphorus, nitrogen, bismuth material includes the following steps:
[0071] S1: The indium phosphide buffer layer is generated on the indium phosphide substrate using the epitaxial...
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Abstract
The invention relates to the field of materials science, especially the indium-phosphorus-nitrogen-bismuth material, a preparation method thereof, a laser and a detector using the indium-phosphorus-nitrogen-bismuth material, and a preparation method for the laser and the detector. The indium-phosphorus-nitrogen-bismuth material comprises an indium phosphide substrate; an indium phosphide bufferinglayer which is disposed on the indium phosphide substrate; and an indium-phosphorus-nitrogen-bismuth body which is disposed on the indium phosphide buffering layer. The chemical formula of the indium-phosphorus-nitrogen-bismuth body is InP<1-x-y>N<x>Bi<y>, wherein x and y are the concentration percentages of N atoms and bismuth atoms, 0<x<11.1%, and 0<y<11.1%. The indium-phosphorus-nitrogen-bismuth material provided by the invention is smaller in energy gap width, is easier to grow and is more stable.
Description
technical field [0001] The invention relates to the field of material science, in particular to an indium phosphide bismuth nitrogen material. Background technique [0002] III-V semiconductor materials are widely used in the fields of lasers, photoelectric tubes and optical fiber communications. Among them, narrow bandgap materials have great advantages in the fields of microelectronics and optoelectronics as substrates for high-speed electronics and optoelectronic devices, and are also very suitable for vertical optical field lasers and high electron carrier transistors. N atom is the atom with the smallest atomic radius among group V elements. Doping it into III-V group materials will affect the conduction band part of the intrinsic material and effectively control the bandgap width of the intrinsic material. That is, after nitrogen (N) atoms are individually added to indium phosphide, the band gap of indium phosphide can be further narrowed to improve its semiconductor ...
Claims
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Login to view more IPC IPC(8): H01L31/0304H01L31/109H01L31/18H01S5/343
CPCY02P70/50
Inventor 梁丹王庶民张丽
Owner CHAOJING TECH BEIJING CO LTD
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