Indium-phosphorus-nitrogen-bismuth material, preparation method thereof, laser and detector using indium-phosphorus-nitrogen-bismuth material, and preparation method for laser and detector

Abstract

The invention relates to the field of materials science, especially the indium-phosphorus-nitrogen-bismuth material, a preparation method thereof, a laser and a detector using the indium-phosphorus-nitrogen-bismuth material, and a preparation method for the laser and the detector. The indium-phosphorus-nitrogen-bismuth material comprises an indium phosphide substrate; an indium phosphide bufferinglayer which is disposed on the indium phosphide substrate; and an indium-phosphorus-nitrogen-bismuth body which is disposed on the indium phosphide buffering layer. The chemical formula of the indium-phosphorus-nitrogen-bismuth body is InP<1-x-y>N<x>Bi<y>, wherein x and y are the concentration percentages of N atoms and bismuth atoms, 0<x<11.1%, and 0<y<11.1%. The indium-phosphorus-nitrogen-bismuth material provided by the invention is smaller in energy gap width, is easier to grow and is more stable.

Description

technical field [0001] The invention relates to the field of material science, in particular to an indium phosphide bismuth nitrogen material. Background technique [0002] III-V semiconductor materials are widely used in the fields of lasers, photoelectric tubes and optical fiber communications. Among them, narrow bandgap materials have great advantages in the fields of microelectronics and optoelectronics as substrates for high-speed electronics and optoelectronic devices, and are also very suitable for vertical optical field lasers and high electron carrier transistors. N atom is the atom with the smallest atomic radius among group V elements. Doping it into III-V group materials will affect the conduction band part of the intrinsic material and effectively control the bandgap width of the intrinsic material. That is, after nitrogen (N) atoms are individually added to indium phosphide, the band gap of indium phosphide can be further narrowed to improve its semiconductor ...

AI Technical Summary

Problems solved by technology

However, when nitrogen (N) atoms are doped, as the N component increases, the bond length of indium nitrogen (In-N) tends to increase, and the bond length of indium phosphorus (In-P) tends to decrease, so that In- The difference between N bond length and In-P bond length gradually increases, making the incorporation of N atoms more difficult

In this way, the band gap of indium phosphide can only be narrowed in a small range, so there is no way to greatly improve its semiconductor performance

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