The invention discloses an AlGaN-based
laser diode with tunable
wavelength on a single
wafer and a preparation method of the AlGaN-based
laser diode. A plurality of two-dimensionally arranged
ridge pattern arrays are prepared by using an
etching method combining a room-temperature dry method and a wet method, each
ridge pattern array is provided with a plurality of different ridges, each
ridge with set width and shape corresponds to a
lasing wavelength, and the plurality of different ridges correspond to a plurality of different lasing wavelengths respectively; a ridge pattern array is designed according to an
effective refractive index, the width and the shape of ridges influence the
effective refractive index and have a limiting effect on a transverse optical mode field and a carrier, so that the
band gap of an atomic-scale ultrathin
quantum well light-emitting layer is influenced, the
lasing wavelength is further adjusted, and the
wavelength-tunable AlGaN-based
laser diode on a single
wafer substrate is realized; according to the invention, fine regulation and control of short
lasing wavelength can be realized, the method is simple and easy to control, the production time and the growth cost are obviously reduced, and the method has wide application in the field of laser diodes with adjustable and controllable lasing
wavelength.