68results about How to "No thermal effect" patented technology

The invention provides a method for cutting a transparent material by using ultra-short pulse laser. The ultra-short pulse laser output by an ultra-short pulse laser generating device is condensed by a condensation device so as to form a bunching laser beam; the bunching laser beam enters from the surface of the transparent material to be machined, so that the center refractive index at a laser application point is increased to form a waveguide structure along a laser emitting direction; the laser is transmitted to the inside of the transparent material along the waveguide structure, and continuously generates a waveguide structure along the laser emitting direction in a transmission process until the entire waveguide structure and the laser penetrate through the transparent material; and therefore, the laser moves in a direction which is vertical to the surface of the transparent material at uniform speed, so that a waveguide plane is formed in the transparent material. The invention further provides a device for cutting the transparent material by using the ultra-short pulse laser. The method and the device for cutting the transparent material by using the ultra-short pulse laser provided by the invention have the advantages of fast cutting speed, small cutting seam, no material consumption and no powder pollution. When the machined material bears a suitable external force, the material is cracked only along a stress fault surface; the broken surface nearly has no conical degree; and the roughness is good.

The invention discloses a solar cell preparation method, and belongs to the technical field of solar cell preparation. The method mainly comprises the following steps that cleaning is conducted; texturing is conducted; boron diffusion is conducted; regional ion implantation is conducted, wherein the back is divided into a comb-shaped N type region and a comb-shaped P type region; annealing is conducted; laser etching is conducted, wherein PN junctions around a silicon wafer are removed, so that PN junctions of the front and the back are separated, the front adopts the main cell PN junction, and the back adopts the secondary cell or protection diode PN junction; by means of PECVD, the two sides of the silicon wafer are coated with films, and anti-reflection films are formed; silk-screen printing is conducted on the front and the back of the silicon wafer, and a front electrode, a first back electrode and a second back electrode are formed through sintering. Accordingly, the influence caused by a bypass diode on the solar cell and component sunlight area is avoided; meanwhile, the solar cell shot spot effect problem can be solved, the generating efficiency is improved, the power generation loss is lowered, and the component operating life is prolonged.

The invention discloses an ultrafast femtosecond laser cutting machine. The ultrafast femtosecond laser cutting machine comprises a bearing platform, wherein multiple support rods are arranged at the lower end of the bearing platform at equal intervals; damping devices are arranged at the lower ends of the support rods, and a connecting rod is connected between every two adjacent support rods; a bearing plate is arranged at the upper end of the bearing platform, first electric sliding rails are arranged on two sides of the bearing platform, second sliders are mounted on the first electric sliding rails, mounting blocks are arranged at the upper ends of the second sliders, first vertical plates are fixed at the upper ends of the mounting blocks, and a mounting plate is arranged between the two first vertical plates. The ultrafast femtosecond laser cutting machine had the remarkable advantages of being high in machining speeds, high in accuracy, simple in parameter setting and the like through femtosecond laser cutting; a product obtained through femtosecond laser cutting does not have the problems of microcracks, breaking or fragments in the aspect of appearance quality; no contamination or edge breakage are caused, and the edge breakage resistance is very high; washing and polishing are not required, the manufacturing cost is reduced and the ultrafast femtosecond laser cutting machine is suitable for popularization.

The invention provides a device with a manganese oxide film adjustable and controllable in a magnetic domain wall. The device comprises a manganese oxide core unit and a magnetic domain wall adjusting and controlling unit. The manganese oxide core unit comprises three layers of structures, namely the conductive manganese oxide film, an insulating substrate and a metallic conductive base arranged sequentially from top to bottom. The magnetic domain wall adjusting and controlling unit is a magnetic conductive needle point, a magnetization direction of the magnetic conductive needle point is perpendicular to the surface of the manganese oxide film, and the magnetic conductive needle point closely contacts with a top film surface and can move along the same. The invention further provides a magnetic domain wall adjusting and controlling method of the manganese oxide film. The method includes moving the magnetic domain wall on the basis of a low-voltage alternating-current electric field effect of the needle point. Based on the device and the method, the invention provides a magnetic memory and a writing method thereof. Since the adopted voltage amplitude is low and no thermal effect is produced, power consumption is reduced.