16 results about "Parasitic oscillation" patented technology

An object of the present disclosure is to suppress reduction of noise resistance and parasitic oscillation in a semiconductor device. A semiconductor device includes: a plurality of semiconductor chips parallelly connected to each other; a source electrode; a first source pattern connected to the source electrode; a source sensing terminal; and a second source pattern connected to the source sensing terminal, wherein a surface of each of the semiconductor chips is connected to the first source pattern, a surface of a reference chip is connected to the second source pattern, a surface of at least one non-reference chip as the semiconductor chip other than the reference chip is not connected to the second source pattern, and a resistance value of a gate resistance of the reference chip is larger than a resistance value of a gate resistance of the non-reference chip.

The invention is a method and an analysis device for determining an oscillation pattern of a substance without using an excitation source for the substance. The analysis device comprises a central unit having two identical sample containers, two microphone apparatuses, and a differential amplifier; wherein: one of the microphone apparatuses is located in each of the sample containers; the microphone apparatuses are electronically coupled to the differential amplifier via respective connecting lines; the connecting lines are of identical design; and the differential amplifier is designed to compensate for in-phase parasitic oscillations from both sample containers and, when the substance is introduced into one of the two sample containers, to determine the oscillation pattern of the substance without using an excitation source for the substance.

The application relates to the field of DC / DC converters, and aims to provide a synchronous rectification circuit and method applied to a bidirectional CLLC resonant converter. The synchronous rectification circuit comprises a high-speed current sampling circuit, a zero-crossing point detection circuit, a timer circuit, a logic processing circuit and a driving circuit; the application detects the change state of the resonant current on the secondary side, guarantees the reliable action of the switch tube according to the delay signal of the timer, and can avoid the misoperation of the switch tube caused by the parasitic oscillation of the circuit. The application improves the accuracy and reliability of the synchronous rectification, does not need to perform complex calculation, has the characteristics of wide application range and good anti-interference performance. The application can realize the synchronous rectification in the same cycle through the real-time detection of the resonant current on the secondary side, and improves the conversion efficiency of the converter.

The invention provides a semiconductor laser with an inclined cavity surface in a vertical plane and a manufacturing method. The semiconductor laser comprises a laminated structure; the main oscillator region, the power pre-amplifier region and the conical power amplifier region are sequentially integrated on the stacked structure in the extension direction of the axis of the waveguide optical path; the laminated structure is formed on the substrate; the substrate has a preset offset cutting angle, and the preset offset cutting angle is larger than or equal to 12 degrees and smaller than 17 degrees; wherein the semiconductor laser is provided with an output cavity surface formed by cleavage along the cleavage direction of the substrate at the output end of the conical power amplifier region, and the output cavity surface is obliquely arranged relative to the direction vertical to the axis of the waveguide light path in a vertical plane. The semiconductor laser effectively solves the technical problems of parasitic oscillation and light beam quality degradation induced by residual reflection of an output cavity surface of a monolithic integrated MOPA semiconductor laser in the prior art.

A switching power conversion apparatus includes an input voltage source, an output load, a first switch connected to a switching node, and a second switch connected to the switching node. An inductive element has a magnetizing current connected to the switching node. The inductive element delivers energy via the first and second switches from the voltage source to the load during power conversion cycles. A capacitance connected to the switching node can resonate with the inductive element during a portion of the power conversion cycles to cause a parasitic oscillation. A first clamp subcircuit is across the inductive element and contains a unidirectional auxiliary switch to trap energy from the inductive element and store it into the storage capacitor and prevent parasitic oscillation. The auxiliary switch is complementary to the first switch. A current source discharges the storage capacitor and uses the energy in the switching power conversion apparatus.

The invention relates to the technical field of gate drive circuits, and provides a crosstalk parasitic oscillation suppression method and circuit, a test platform and equipment, and the method comprises the steps: a drive signal generation module generates a gate drive signal, and the gate drive signal is transmitted to a gate of a main MOS tube through a module in which an auxiliary MOS tube and an auxiliary capacitor are connected in parallel; when crosstalk parasitic oscillation is generated, the auxiliary capacitor and the parasitic inductor of the circuit form series resonance so as to form a low-impedance path for suppressing the crosstalk parasitic oscillation. When crosstalk parasitic oscillation is generated, the auxiliary capacitor and the parasitic inductor of the circuit form series resonance, and the auxiliary capacitor provides a low-impedance path for the oscillation component of the crosstalk parasitic oscillation near the resonant frequency, so that the amplitude of the crosstalk parasitic oscillation is reduced, and the influence of the crosstalk parasitic oscillation is suppressed. According to the invention, the switching speed of the main MOS tube is guaranteed without depending on complex logic control, and crosstalk parasitic oscillation can be effectively suppressed in a scene with a large voltage change rate.

The invention discloses a pre-cavity electron beam channel structure for suppressing parasitic oscillation of a high-power gyrotron. The structure comprises a cathode end electron beam channel cylinder and a resonant cavity end electron beam channel cylinder which are communicated with each other, the cathode end electron beam channel cylinder comprises a cathode end outer cylinder and a cathode end inner cylinder which are sleeved and fixed together, and a first channel in a conical cylinder shape is formed in the cathode end outer cylinder; the resonant cavity end electron beam channel cylinder comprises a resonant cavity end outer cylinder and a resonant cavity end inner cylinder which are sleeved and fixed together, a second channel of a kidney-shaped cylindrical structure is formed in the resonant cavity end inner cylinder, the inner diameter of the second channel is gradually reduced from the two ends to the middle, and the interior of the resonant cavity end inner cylinder is further concaved inwards to form a plurality of inner holes which are not symmetric about the central axis. When the structure is used, the problems that in the prior art, a gyrotron parasitic oscillation suppression mode is complex in machining and high in cost, and parasitic oscillation of a low-frequency band cannot be effectively suppressed are solved.

This invention discloses a low-noise, stable acquisition and amplification circuit for weak photoelectric signals. The circuit includes: a photodetector module, a transimpedance amplifier module, a power frequency notch filter and low-pass active filter module, an output buffer conditioning module, and a regulated power supply module. The photodetector module reduces the influence of junction capacitance and suppresses parasitic oscillations through parasitic suppression capacitors. The transimpedance amplifier module achieves low-noise current-to-voltage conversion of weak photocurrent. The power frequency notch filter and low-pass active filter module filters out 50Hz power frequency interference and high-frequency thermal noise. The output buffer conditioning module achieves impedance matching to ensure distortion-free signal output. The regulated power supply module provides low-ripple positive and negative power supplies and a precise reference voltage through positive voltage regulators, negative voltage regulators, and a voltage reference source, effectively suppressing power supply noise and DC drift. This invention improves the signal-to-noise ratio and acquisition stability of weak optical signals through precise port connections and coordinated operation of each module.

This invention discloses a method for stabilizing and correcting radio frequency power amplifiers based on modulator parasitic control, belonging to the field of radio frequency technology. The method includes: Step S1: collecting modulator output voltage, power amplifier power supply current, power amplifier power supply voltage, and gate bias voltage; Step S2: calculating parasitic response parameters using a recursive parameter algorithm and recording abnormal oscillation components; Step S3: calculating stability margin values ​​and identifying abnormal oscillation branches; Step S4: calculating the damping coefficient of the abnormal oscillation branches, constructing a digital compensator to perform a cyclic correction process, completing the cyclic correction process when the stability margin value of the abnormal oscillation branch exceeds a preset margin threshold. This invention, by collecting power amplifier power supply voltage and gate bias voltage, uses a recursive parameter algorithm to calculate parasitic response parameters in real time, and actively predicts and corrects parasitic oscillations. It has the advantage of verifying parasitic oscillations in the bias network and helps to quickly locate design defects in the bias network.

To provide a semiconductor device capable of reducing parasitic oscillation caused by inductance generated between semiconductor chips.SOLUTION: The first gate pattern 4 and the first source pattern 6 are linearly formed in parallel with each other along a first side of the insulating substrate 1. The second gate pattern 5 extends from a first side of the insulating substrate 1 to a second side opposite to the first side and is formed in a rectangular shape in a top view. The drain pattern 8 is formed so as to surround at least three sides of the square shape of the second gate pattern 5. The second source pattern 7 is formed along sides other than the first side of the insulating substrate 1 so as to surround the drain pattern 8. The first and second groups of semiconductor chips 1112 and are arranged at positions adjacent to the second source pattern 7. The first and second groups of semiconductor chips 1112 and and the second source pattern 7 are connected via a plurality of first source wires 23.SELECTED DRAWING: Figure 2

The application provides a millimeter wave power divider based on an electromagnetic bandgap structure and belongs to the technical field of millimeter waves.The millimeter wave power divider comprises a dielectric substrate, a power divider body composed of a substrate integrated waveguide input power division stage and a half-mode substrate integrated waveguide output power division stage arranged on the dielectric substrate, a metal packaging cavity, a periodic metal column array electromagnetic bandgap resonance suppression structure arranged on the inner surface of the top cover plate of the metal packaging cavity, and a suspended microstrip line transition structure connected to the input port and the output port respectively.The application utilizes the bandgap characteristics of the electromagnetic bandgap structure to suppress the parallel plate waveguide mode excited by the deep cavity packaging, eliminates parasitic oscillation, and realizes low-loss signal transition by using the suspended microstrip line, thereby improving the transmission performance of the power divider while keeping the miniaturization advantage.

The invention provides a low-power-consumption numerically-controlled oscillator, relates to the technical field of integrated circuits, and comprises a resonant cavity module used for generating a high-frequency resonant signal based on a resonator; the input end of the complementary cross-coupled oscillation module is connected with the resonant cavity module, and the complementary cross-coupled oscillation module is used for receiving high-frequency resonant signals and generating continuous oscillation; a capacitor array of the segmented numerical control capacitor tuning module is connected in parallel to two ends of the resonant cavity module and is used for receiving external numerical control signals and changing equivalent capacitance of a resonant network, so that wide-range and high-precision digital tuning is carried out on oscillation frequency; the parasitic oscillation suppression module is integrated in an internal feedback path of the complementary cross-coupled oscillation module and is used for suppressing direct-current positive feedback and attenuating low-frequency loop gain so as to eliminate direct-current locking and low-frequency parasitic oscillation; the input end of the output buffer module is connected with the output node of the complementary cross-coupling oscillation module, and the output buffer module is used for shaping and driving the oscillation signal and then outputting the signal. In the mode, wide tuning, ultra-low power consumption, high stability and high-precision tuning are realized, meanwhile, the phase noise performance and the mass production feasibility are improved, and the strict requirements of the battery-free Internet of Things node are met.

The invention relates to the field of integrated circuits, in particular to a low-phase-noise differential oscillator, a self-adaptive biasing circuit and application of the low-phase-noise differential oscillator and the self-adaptive biasing circuit. The oscillator adopts a Class-C architecture, and a self-adaptive bias circuit composed of two bias copy transistors, an integrating capacitor and a bias resistor is introduced. The self-adaptive biasing circuit and the Class-C oscillator can form a feedback loop, so that the differential crystal oscillator can reliably start oscillation in a C-type working mode; and the conduction angle of the cross coupling pair is limited in a relatively small range, so that extra noise is prevented from being introduced by an overlarge conduction angle. The adaptive biasing circuit can further reduce the pole frequency corresponding to a low-frequency additional resonance point introduced by the Class-C structure. Therefore, the problem that the differential crystal oscillator is difficult to give consideration to reliable oscillation starting and parasitic oscillation suppression is solved.

This invention belongs to the field of microwave vacuum electronic devices, specifically providing a trapezoidal subwavelength aperture high-frequency structure for an extended interaction klystron, used to improve the power and gain of the extended interaction klystron and expand its bandwidth. This invention creatively proposes an isosceles trapezoidal subwavelength aperture with a base length proportional to the width of the resonant cavity, thereby designing the input cavity, intermediate cavity, and output cavity. This increases the beam-wave interaction area and characteristic impedance of the intermediate cavity, improving the interaction efficiency while maintaining a low quality factor and avoiding parasitic oscillations. It also increases the characteristic impedance of the input and output cavities, enhancing beam-wave interaction and reducing the input reflection coefficient S. 11 With a relatively large value and a -5dB bandwidth greater than 1GHz, the power feed and bandwidth extension capabilities are further enhanced. Compared with the traditional trapezoidal structure, the extended interaction klystron of this invention has significant advantages in terms of high power, high gain, and wide bandwidth.

The purpose of the present disclosure is to provide a semiconductor device capable of reducing parasitic oscillation caused by inductance generated between semiconductor chips. The first gate pattern (4) and the first source pattern (6) are linearly formed parallel to each other along a first side of the insulating substrate (1). The second gate pattern (5) extends from a first side of the insulating substrate (1) to a second side facing the first side, and is formed in a quadrilateral shape in plan view. The drain pattern (8) is formed so as to surround at least three sides of the quadrangle of the second gate pattern (5). The second source pattern (7) is formed along a side of the insulating substrate (1) other than the first side so as to surround the drain pattern (8). The first semiconductor chip group (11) and the second semiconductor chip group (12) are disposed at positions adjacent to the second source pattern (7). The first semiconductor chip group (11), the second semiconductor chip group (12), and the second source pattern (7) are connected via a plurality of first gate conductive lines (23).

The invention discloses a correlation analysis and calculation method for backward voltage and forward current of a diode, and the method comprises the steps: calculating the parasitic oscillation frequency fr of a C-CR buffer turn-off peak circuit through a power conversion basic power supply equivalent parasitic circuit; measuring the parasitic inductance 100nH of a bus inductance loop, the generated voltage ringing peak value 154V and the instantaneous energy J generated on the parasitic inductance through a double-pulse test; the value of the CCR is calculated, all ringing energy is absorbed by a CCR loop, the voltage of a voltage capacitor cannot be suddenly changed, voltage spikes appear on a resistor R, and selection of the resistor R needs to adapt to a proper oscillation damping coefficient; and after R is calculated, CC is calculated according to the damping oscillation cut-off frequency. The invention belongs to the technical field of electronics, and particularly relates to a correlation analysis and calculation method for backward voltage and forward current of a diode.