A device with a magnetic domain wall adjustable manganese oxide film and a magnetic domain wall adjustment method

Abstract

The invention provides a device with a manganese oxide film adjustable and controllable in a magnetic domain wall. The device comprises a manganese oxide core unit and a magnetic domain wall adjusting and controlling unit. The manganese oxide core unit comprises three layers of structures, namely the conductive manganese oxide film, an insulating substrate and a metallic conductive base arranged sequentially from top to bottom. The magnetic domain wall adjusting and controlling unit is a magnetic conductive needle point, a magnetization direction of the magnetic conductive needle point is perpendicular to the surface of the manganese oxide film, and the magnetic conductive needle point closely contacts with a top film surface and can move along the same. The invention further provides a magnetic domain wall adjusting and controlling method of the manganese oxide film. The method includes moving the magnetic domain wall on the basis of a low-voltage alternating-current electric field effect of the needle point. Based on the device and the method, the invention provides a magnetic memory and a writing method thereof. Since the adopted voltage amplitude is low and no thermal effect is produced, power consumption is reduced.

Description

Technical field [0001] The present invention relates to a device with a magnetic domain wall adjustable manganese oxide film and a magnetic domain wall control method, and to a magnetic memory formed by the above device and method and a writing method of the magnetic memory. Background technique [0002] Spintronics devices have the characteristics of data non-volatility, high speed, high density, etc. The typical representative is magnetic memory, which is the core device of computer, information and communication technology, which promotes the huge development of science and technology and economy. [0003] The data layer of a magnetic memory is usually a layer of magnetic material or a thin film of magnetic material. It uses the magnetization direction of the magnetic moment to characterize the stored data bits. The magnetization direction of the magnetic moment of the data layer can be flipped from the first magnetization direction indicating logic "0" to Represents the second ...

AI Technical Summary

Problems solved by technology

The traditional method of controlling magnetic moment inversion is to use a magnetic field. The magnetization direction of the magnetic moment of the data layer can be changed in response to the application of an external magnetic field, that is, the bit logic state stored in the magnetic memory unit is rewritten by applying an external magnetic field. switch between high-resistance state and high-resistance state; the above-mentioned external magnetic field is usually generated by flowing a large current in the conductor cloth and according to the right-hand rule, changing the direction of the current, the direction of the magnetic field also changes accordingly, but this magnetic field-based control The method requires a lot of power loss and generates a lot of waste heat, which is not conducive to the improvement of device integration in array devices

In addition, since the current-based spin transfer torque (SpinTorqueTransfer, STT) effect was discovered in 1996, the magnetization direction of the magnetic moment of the data layer can also be reversed by the current-based spin torque transfer effect, writing in the magnetic memory data, although the current required for magnetic moment switching is reduced, it still requires up to 10 6 A / cm 2 The above current density, the related heating effect limits its practical application; and its critical current density cannot be reduced, so it consumes a large amount of power as the method of applying an external magnetic field

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