A device with a magnetic domain wall adjustable manganese oxide film and a magnetic domain wall adjustment method

A manganese oxide and magnetic domain wall technology, which is applied to devices with a magnetic domain wall regulated manganese oxide film and the field of magnetic domain wall regulation, can solve the problems of increasing, a large amount of waste heat, and the inability to reduce the critical current density.

A manganese oxide and magnetic domain wall technology, which is applied to devices with a magnetic domain wall regulated manganese oxide film and the field of magnetic domain wall regulation, can solve the problems of increasing, a large amount of waste heat, and the inability to reduce the critical current density.

CN103427018BInactive Publication Date: 2016-01-27BEIJING NORMAL UNIVERSITY
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  • A device with a magnetic domain wall adjustable manganese oxide film and a magnetic domain wall adjustment method
  • A device with a magnetic domain wall adjustable manganese oxide film and a magnetic domain wall adjustment method
  • A device with a magnetic domain wall adjustable manganese oxide film and a magnetic domain wall adjustment method

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Using pulsed laser deposition technology, the optically polished LaAlO 3 (001) Preparation of epitaxially grown La on a single crystal substrate 0.67 Sr 0.33 MnO 3 film. During the preparation process, the substrate temperature was 780°C, the oxygen pressure was 50 Pa, the laser energy was 170 mJ, the frequency was 3 Hz, and the distance between the substrate and the target was 4.1 cm. The coating time is 15 minutes. After preparation, the film is annealed in situ at 700℃, and the oxygen pressure during annealing is 4×10 4 Pa, annealing time is 10 minutes, and then the temperature is cooled naturally. Income La 0.67 Sr 0.33 MnO 3 The thickness is about 100 nm. Label the sample as LSMO / LAO. Take the LSMO / LAO sample out and place it on a metal conductive bottom plate (such as a copper bottom plate), and the sample is in close contact with the conductive bottom plate to form a manganese oxide core unit with adjustable magnetic domain walls.

[0035] In the La 0.67 Sr 0.33 ...

Embodiment 2

[0043] Using the same method in Example 1 to prepare La (1-x) Ba x MnO 3 (x=0.2, 0.3), and using the same method for magnetic domain control, the same magnetic domain structure as in Example 1 is obtained.

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Abstract

The invention proposes a device with a manganese oxide film with a controllable magnetic domain wall, including a manganese oxide core unit and a magnetic domain wall control unit; the manganese oxide core unit includes a three-layer structure, which are sequentially from top to bottom. A conductive manganese oxide film, an insulating substrate, and a metal conductive base are provided; the magnetic domain wall control unit is a magnetic conductive tip, the magnetization direction of the magnetic conductive tip is perpendicular to the surface of the above-mentioned manganese oxide film, and the tip is in contact with the above-mentioned manganese oxide The top film surface of the film is in close contact and can move along the top film surface; in addition, the present invention also proposes a method for regulating the magnetic domain wall of the manganese oxide film, which moves the magnetic domain based on the AC electric field effect of low voltage at the tip. The position of the wall; based on the above devices and methods, the present invention proposes a magnetic memory and a writing method of the magnetic memory. Since the voltage amplitude used is small, there is no thermal effect, thus reducing power consumption.

Description

Technical field [0001] The present invention relates to a device with a magnetic domain wall adjustable manganese oxide film and a magnetic domain wall control method, and to a magnetic memory formed by the above device and method and a writing method of the magnetic memory. Background technique [0002] Spintronics devices have the characteristics of data non-volatility, high speed, high density, etc. The typical representative is magnetic memory, which is the core device of computer, information and communication technology, which promotes the huge development of science and technology and economy. [0003] The data layer of a magnetic memory is usually a layer of magnetic material or a thin film of magnetic material. It uses the magnetization direction of the magnetic moment to characterize the stored data bits. The magnetization direction of the magnetic moment of the data layer can be flipped from the first magnetization direction indicating logic "0" to Represents the second ...

Claims

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Application Information

Patent Timeline
27 Jan 2016
Publication
CN103427018B
IPC
H01L43/08; H01L43/10; G11C11/16; H10N50/10
CPC
G11C11/1659; G11C11/161
Inventors
熊昌民; 王静