The application belongs to the technical field of
semiconductor photoelectric devices, and particularly relates to a
semiconductor laser element with a strain-induced
exciton response layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower
waveguide layer, an
active layer, an upper
waveguide layer, an
electron blocking layer and an upper confinement layer, wherein the upper
waveguide layer and the
electron blocking layer are provided with the strain-induced
exciton response layer; the strain-induced
exciton response layer is one of KV3Sb5, WSe2, ReO3, RbV3Sb5, CsV3Sb5 and KSbO3 or a combination of two or more thereof; the strain-induced exciton response layer is created by applying a local strain to the interface between the
active layer and the upper waveguide layer and / or the lower waveguide layer, creating a strain field, changing the
electron anisotropy, eliminating the sub-bandgap emission state of the spectrum overlap of the strain-induced exciton response layer, inhibiting the mode jump in the vertical direction, generating a single-mode
laser, obtaining a good FFP far-
field pattern, enhancing the exciton response of the
active layer, reducing the driving
voltage and excitation threshold of the
laser element, enhancing the confinement factor, and improving the
optical power and
slope efficiency of the laser element.