The invention discloses lead-free glass
powder for
passivation of mesa type semiconductors and application of the lead-free glass
powder, the lead-free glass
powder comprises base material powder and
crystal substance and / or
quartz glass powder, the base material powder comprises, by weight, 35%-55% of ZnO, 0-10% of B2O3, 25%-40% of SiO2, 5%-40% of Y2O3, 0.01%-10% of RO and 0.01%-5% of RxOy, RO is at least one of CaO, BaO, MgO and SrO, and RxOy is at least one of SnO2, In2O3, ZrO2, TiO2, Bi2O3, La2O3, Nd2O3, GeO2, CeO2 and MnO2; the
crystal substance is at least one of ZnO, ZnOB2O3, 2ZnOSiO2, 3ZnOB2O3, 4ZnOB2O3 and 2MgO. 2Al2O3. 5SiO2, relative to 100 g of the base material powder, the dosage of the
crystal substance is 0.01-10 g, and the dosage of the
quartz glass powder is 0-5 g. By increasing the content of SiO2 in the glass powder, the
acid resistance of the material is improved. The stable and uniform glass is obtained by reducing the main component ZnO, reducing B2O3, increasing the content of Y2O3 and adding RO to generate a synergistic effect.