153results about How to "Layer is high" patented technology

Provided are a semiconductor layer manufacturing method and a semiconductor manufacturing apparatus capable of forming a high quality semiconductor layer even by a single chamber system, with a shortened process time required for reducing a concentration of impurities that exist in a reaction chamber before forming the semiconductor layer. A semiconductor device manufactured using such a method and apparatus is also provided. The present invention relates to a semiconductor layer manufacturing method of forming a semiconductor layer inside a reaction chamber (101) capable of being hermetically sealed, including an impurities removing step of removing impurities inside the reaction chamber (101) using a replacement gas, and a semiconductor layer forming step of forming the semiconductor layer, the impurities removing step being a step in which a cycle composed of a replacement gas introducing step of introducing the replacement gas into the reaction chamber (101) and an exhausting step of exhausting the replacement gas is repeated a plurality of times, the impurities removing step being performed at least before the semiconductor layer forming step.

Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.

A method and device for the exchange of data in messages between at least two users which are connected by a bus system and have separate time bases, the messages containing the data being transmitted by the users via the bus system; and a first user, in a function as timer, controls the messages as a function of time in such a way that it repeatedly transmits a reference message, which contains time information regarding the time base of the first user, via the bus at a specifiable time interval; the at least second user forms its own time information, using its time base, as a function of the time information of the first user; a correction value is ascertained from the two pieces of time information; and the second user adapts its time information and/or its time base as a function of the correction value.

An electronic package, and method of making the electronic package, is provided. The package includes a semiconductor chip and an multi-layered interconnect structure having a high density interconnect layer such as an allylated surface layer. The semiconductor chip includes a plurality of contact members on one of its surfaces that are connected to the multi-layered interconnect structure by a plurality of solder connections. The multi-layered interconnect structure is adapted for electrically interconnecting the semiconductor chip to a circuitized substrate (eg., circuit board) with another plurality of solder connections and includes a thermally conductive layer being comprised of a material having a selected thickness and coefficient of thermal expansion to substantially prevent failure of the solder connections between said first plurality of electrically conductive members and the semiconductor chip. The electronic package further includes a dielectric material having an effective modulus to assure sufficient compliancy of the multi-layered interconnect structure during operation. The allylated surface layer has the property of being able to withstand thermal stresses that arise during thermal cycling operation of the electronic package.

An optical device (300) comprises a multilayer structure, formed by wafer bonding, incorporating in sequence a silicon dioxide layer (304), a buried silicide layer (306), a contact layer (308) and a silicon surface layer (310). The surface layer (310) is selectively etched to form an exposed rib (312). An upper surface of the rib (312) is doped to form an elongate electrode (314) therealong. The surface layer (310) is selectively etched to the contact layer (308) in regions remote from the rib (312) to form via channels (316a, 316b) for making electrical connection to the contact layer (308). The rib (312) forms a waveguide along which radiation propagates. When the electrode (314) is biased relative to the contact layer (308), charge carriers are injected into the rib (312) and induce refractive index changes in a central region (324) thereof where most of the radiation propagates along the rib (312). The silicide layer (306) provides an efficient current conduction path for injecting the carriers, thereby providing enhanced device operating bandwidth and reduced power dissipation.

The described invention is an unique universal ink jet media. The invention incorporates a unique barrier layer based upon UV or EB curable chemistry which replaces common polyethylene extruded bases. The invention also incorporates multiple ink receptive layers. The first layer is based upon gelatin and/or polyvinyl alcohol (PVOH) chemistries and gives the invention excellent ink drytime. Poor drytime is a common problem which leads to smudging and print defects, especially as ink jet printer speeds increase as technology improves. The high ink absorbency of the invention also makes this media well suited for wide format ink jet printers. The next ink receptive layer(s) are based upon pigmented, cellulose chemistry which reduces the tack of the sheet and gives the sheet good waterfastness. This is important for the end use in that the sheet may be frequently handled and exposed to dampness. Another unique property provided by the next ink receptive layer(s) is excellent print quality across a wide range of printers and ink sets (both dye and pigmented), in which other media perform poorly. A final unique property is an anti-curl coating which resists curling as the ambient conditions change from cold and dry to hot and humid.

A key management scheme for managing encryption keys in a cryptographic co-processor includes the first step of selecting a key from one of a symmetrical key type and an asymmetrical key type. Then, the key bit length is selected. The key is then generated and, lastly, the key is represented in either an external form or an internal form.

Disclosed is an inkjet recording sheet having a colorant-receiving layer on the surface of its support, in which the colorant-receiving layer contains at least one of compounds represented by the following general formula (1) and compounds represented by the following general formula (2), and contains a vapor-phase-process silica, a polyvinyl alcohol, a boron compound, and a mordant. In the formulae, R represents a saturated hydrocarbon group having from 1 to 12 carbon atoms, an unsaturated hydrocarbon group having from 1 to 12 carbon atoms, a phenyl group, or an acyl group, and n indicates an integer of 1 to 3. <paragraph lvl="0"><in-line-formula>RO(CH2CH2O)nH (1) </in-line-formula><paragraph lvl="0"><in-line-formula>RO(CH2CH(CH3)O)nH (2) </in-line-formula>

This disclosure relates to a data storage medium, and in particular to a data storage medium comprising at least one high modulus layer used to control the overall degree of flatness in the storage medium.

An electrosurgical apparatus includes an active electrode with a low-work function coating to improve ablation performance. Low-work function coatings include compounds of alkali metals and alkali earth metals. Additionally, the active electrode may include various micro-structures or asperities or nano-structures or asperities. An array of carbon nanotubes may be aligned and secured on the active electrode. A return electrode comprises a high-work function coating to suppress electrical discharge activity on the return electrode.

The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.

A filament winding apparatus that efficiently and orderly winds a fiber bundle with respect to a mandrel in a short period of time. A supporting board supports the mandrel, and a helical winding head supplies and guides the fiber bundle towards the mandrel. The helical winding head includes a group of guide tubes radially arranged on a circumferential surface of a guide ring, and a tube operation mechanism that reciprocates the guide tube along a tube axis center direction. The guide tube is moved closer to a circumferential surface of the dome part when the guide tube is facing a dome part of the mandrel such that the distance between the winding position of the fiber bundle and the guide tube at the dome part can be reduced, and the fiber bundle is orderly wound according to an appropriate winding trajectory.

An objective of the present invention is to provide a golf ball striking a balance between the flight distance on the driver shots and the approach performance on the approach shots and having the excellent shot feeling and durability. The present invention provides a golf ball comprising a core consisting of a center and a surrounding layer covering the center; at least one intermediate layer covering the core; and a cover covering the intermediate layer; wherein at least one piece or one layer of the intermediate layer is formed from a highly elastic intermediate layer composition that contains (A) a highly elastic resin having a flexural modulus in a range from 700 MPa to 5,000 MPa and (B) an ionomer resin having a flexural modulus in a range from 150 MPa to 1,000 MPa in a content ratio ((A)/(B)) of (A) the highly elastic resin to (B) the ionomer resin (B) being (20 mass % to 80 mass %)/(80 mass % to 20 mass %) (the total is 100 mass %), and wherein a surface hardness (Hm) of the intermediate layer and a surface hardness (Hs) of the core satisfy the equation: Hm≧Hs, and the cover has a slab hardness (Hc) of 45 or less in Shore D hardness.

The present invention discloses a semiconductor device having a floating trap type nonvolatile memory cell and a method for manufacturing the same. The method includes providing a semiconductor substrate having a nonvolatile memory region, a first region, and a second region. A triple layer composed of a tunnel oxide layer, a charge storing layer and a first deposited oxide layer on the semiconductor substrate is formed sequentially. The triple layer on the semiconductor substrate except the nonvolatile memory region is then removed. A second deposited oxide layer is formed on an entire surface of the semiconductor substrate including the first and second regions from which the triple layer is removed. The second deposited oxide layer on the second region is removed, and a first thermal oxide layer is formed on the entire surface of the semiconductor substrate including the second region from which the second deposited oxide layer is removed. The semiconductor device can be manufactured according to the present invention to have a reduced processing time and a reduced change of impurity doping profile. The thickness of a blocking oxide layer and a high voltage gate oxide layer can be controlled.

This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 kΩcm, an oxygen concentration Oi of 5.0×10¹⁷ to 20×10¹⁷ atoms/cm³ (ASTM F-121, 1979), and either one of a nitrogen concentration of 1.0×10¹³ to 10×10¹³ atoms/cm³ (ASTM F-121, 1979) and a carbon concentration of 0.5×10¹⁶ to 10×10¹⁶ atoms/cm³ or 0.5×10¹⁶ to 50×10¹⁶ atoms/cm³ (ASTM F-123, 1981) by using a Czochralski method, processing the single crystal into wafers by slicing the single crystal, and subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere. A peak position of a resistivity serving as a boundary between a p-type region of a wafer surface side and a p/n conversion region of an inner side of a thickness direction is adjusted by the nitrogen concentration or the carbon concentration such that the peak position is set to a boundary depth in a range of 10 to 70 μm from the wafer surface.

A semiconductor device and a fabrication method of the semiconductor device, the semiconductor device including: a substrate; a nitride based compound semiconductor layer placed on the substrate and doped with a first transition metal atom; an aluminum gallium nitride layer (Al_xGa_1-xN) (where 0.1<=x<=1) placed on the nitride based compound semiconductor layer; a nitride based compound semiconductor layer placed on the aluminum gallium nitride layer (Al_xGa_1-xN) (where 0.1<=x<=1) and doped with a second transition metal atom; an aluminum gallium nitride layer (Al_yGa_1-yN) (where 0.1<=y<=1) placed on the nitride based compound semiconductor layer doped with the second transition metal atom; and a gate electrode, a source electrode, and a drain electrode which are placed on the aluminum gallium nitride layer (Al_yGa_1-yN) (where 0.1<=y<=1). Accordingly, piezo charge is inactivated, leakage current and current collapse are reduced, high frequency characteristics can be improved by obtaining a high resistivity semiconductor layer, and stable high frequency performance can be obtained.

Method for forming back contact stacks for CIGS and CZTS TFPV solar cells are described wherein some embodiments include adhesion promoter layers, bulk current transport layers, stress management/diffusion barrier layers, optical reflector layers, and ohmic contact layers. Other back contact stacks include adhesion promoter layers, bulk current transport layers, diffusion barrier layers, and ohmic contact layers.

Architectures for tandem solar cell including two thin films forming a top layer and a bottom layer. Such cells can be bi-facial. Exemplary materials used for the top layer are CIGS (CGS), perovskites (Sn and Ge), amorphous silicon (a-Si), copper oxide, tin sulfide, CZTS and III-V materials. For the bottom layer an inorganic film such as either silicon or germanium may be used. In general, the architecture includes of a glass, plastic or metal substrate and a buffer layer, either an oxide insulator or nitride conductor.

A method of fabricating a RRAM includes: forming a bottom electrode; forming a first metal layer, a first metal oxide layer, and a second metal layer on the bottom electrode in sequence; performing an RTO process followed by a top electrode formation; oxidizing the first metal layer to a second metal oxide layer comprising a second oxygen content; and oxidizing the second metal layer to a third metal oxide layer comprising a third oxygen content; wherein the first metal oxide layer has a first oxygen content after the RTO process is performed, the third oxygen content being higher than the first oxygen content and the first oxygen content being higher than the second oxygen content.

A method for manufacturing a sensor element is provided for detecting at least one property of a measuring gas in a measuring gas chamber, in particular for detecting a proportion of a gas component in the measuring gas or a temperature of the measuring gas. The method includes the following steps: providing at least one solid electrolyte which includes at least one functional element; applying, at least in sections, at least one first layer made of a ceramic material to the solid electrolyte, the first layer having a first porosity after the application; and applying, at least in sections, at least one second layer made of a ceramic material, the second layer having a second porosity after the application, and the first layer differing from the second layer with respect to at least one material property. Moreover, a sensor element which is manufacturable according to this method is provided.

A high refractive index layer of a cured first coating composition comprising (A) metal oxide fine particles selected from among titanium oxide, aluminum oxide, zirconium oxide, cerium oxide, iron oxide, tin oxide, and compound oxides thereof and (B) a compound having an acrylic, methacrylic, vinyl or styryl group, and a low refractive index layer of a cured second coating composition comprising (D) voided silica-base inorganic oxide fine particles and (C) a compound having at least two epoxy and/or oxetane groups are successively stacked on a substrate to form an antireflection film.

The present invention provides a novel ethylenically unsaturated compound which is highly sensitive to scanning exposure due to an ultraviolet to near-infrared laser and is cured to give good physical properties; a light sensitive composition providing good developability and high sensitivity and forming a high strength layer; a planographic printing plate material having advantages that good developability, high sensitivity and high strength layer are obtained, particularly a planographic printing plate material requiring no developing machine which are mounted on a printing press without any development, followed by printing and which provides excellent developability on a printing press and printing durability; and a printing process. The ethylenically unsaturated compound has in the molecule a photo-oxidation group and a polymerizable ethylenically unsaturated bond, and has a predetermined solubility in water or an aqueous alkali solution. The planographic printing plate material is characterized in that it comprises a support and provided thereon, a light sensitive layer containing the ethylenically unsaturated compound, a polyhalogen compound as a photopolymerization initiator, a water-soluble polymer binder as a polymer binder and an infrared absorbing agent.

The present invention relates to an insulated electric wire. The insulated electric wire according to the present invention includes a high adhesion resin layer made of a polyamideimide resin containing a compound having a polar group in a molecular structure of an insulation material; and a high flexibility resin layer provided on the high adhesion resin layer. The present invention advantageously improves adherence between a polyamideimide resin and a conductor, and provides adhesive strength with the conductor to improve flexibility of the insulated electric wire and at the same time to improve flexibility of an insulator without deterioration of heat resistance of the insulator.

The challenges in this invention is to provide automobile use mat that has distinguished noise absorption and anti-slip features, as well as it being light in weight for a low cost.

The inventors, for their exerted investigations in resolving such challenges and as a result, as a replacement to the frequently used conventional mats with mounted resin (bump) emboss configuration, have introduced the nonwoven fabric layer from polypropylene fiber, burned on the lower surface side of the nonwoven fabric layer, deforming the fibers, forming anti-slip layer from melt bonding the fibers together, discovered the possibilities in achieving an automobile use mat that is light weight, permeable, dominant in its anti-slip effect, easy to bend as well as handle, that lead to this invention.