On-chip pumping-signal light resonance erbium silicate laser and preparation method thereof

Abstract

The embodiment of the invention provides an on-chip pumping-signal light resonance erbium silicate laser and a preparation method thereof. The on-chip pumping-signal light resonance erbium silicate laser comprises a laser active region and a mixed resonant cavity, wherein the mixed resonant cavity is loaded on the upper surface of the laser active region; the laser active region is sequentially provided with a silicon substrate layer and a gain dielectric layer from bottom to top; the gain dielectric layer is of a silicon nitride layer and erbium silicate layer alternating structure, and the upper surface and the lower surface of the gain dielectric layer are both silicon nitride layers; the mixed resonant cavity is of a strip-shaped waveguide structure and is used for controlling a lightfield to be transmitted in the laser active region in a waveguide direction and ensuring that pumping light and signal light are subjected to resonance enhancement in the cavity at the same time so asto improve the absorption efficiency of the pumping and the resonance intensity of the signal light. The erbium silicate compound is used as an optical gain material, so that the optical gain of thematerial in unit distance is effectively improved; the transmission loss of the waveguide is reduced; and the strip-loaded resonant cavity waveguide structure is arranged, so that the etching difficulty of the erbium silicate laser resonant cavity is solved, and meanwhile, the laser output characteristic is improved.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an erbium silicate laser with on-chip pumping-signal light resonance and a preparation method thereof. Background technique [0002] In recent years, as silicon-based optoelectronic technology has played an increasingly important role in important fields such as optical communications and data centers, it has developed rapidly. Among them, silicon-based lasers, as the key components of silicon-based optoelectronic devices, especially narrow linewidth lasers, have great application potential due to their advantages of high coherence, high frequency stability and wide wavelength tuning. Therefore, the integration of high-performance narrow-linewidth lasers on silicon-based optoelectronics platforms is of great significance for applications in ultra-high-speed optical communications, long-distance laser communications, ultra-high-resolution lidar, and optical sensing. Howev...

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Problems solved by technology

[0006] In order to effectively solve the defect that the output power, laser efficiency and quality factors of the pump laser are too strict when obtaining ultra-narrow linewidth laser in the prior art, the embodiment of the present invention provides an on-chip pump-signal light Resonant erbium silicate laser and method of making the same

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