Quantum dot micro laser and preparation method thereof

A micro-laser and quantum dot technology, applied in lasers, phonon exciters, laser parts and other directions, can solve the problems of insufficient surface smoothness of micro-cavity structures, low luminous efficiency of quantum dots, and large laser loss, etc., and achieve processing accuracy. High, improve luminous efficiency, reduce the effect of loss

Pending Publication Date: 2021-11-26
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

[0003] At present, a quantum dot laser source of a material is used to realize white light laser. During the conversion process of white light laser, most of the laser energy is converted into broad-spectrum light, and the luminous angle is significantly increased, which can improve its safety and is more suitable for some civilian applications. Combining quantu

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  • Quantum dot micro laser and preparation method thereof
  • Quantum dot micro laser and preparation method thereof
  • Quantum dot micro laser and preparation method thereof

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[0029] BRIEF DESCRIPTION further aspect of the present invention in conjunction with the following:

[0030] The present invention provides a micro quantum dot lasers, such as figure 1 , 2 As shown in the quantum dot laser micro SOI wafer to a silicon substrate as a carrier, a silicon disk using a suspension structure. Silicon disk suspension structure comprises a quantum dot laser micro silicon substrate layer disposed from bottom to top 1, a first silicon dioxide layer 2, a silicon dioxide layer 3 and the strut 4 silicon dioxide layer disc, round silica layer 4 on the surface of the disc is coated with a suspension 5, the quantum dot layer disposed on the quantum dot layer 5 has a plurality of quantum dots of different sizes, covered with the second silicon dioxide layer 6 on the quantum dot layer 5.

[0031] In an embodiment of the present invention, the suspension structure comprises a silicon disk 3 pillars silica layer 3, each silica support strut 3 a silicon dioxide layer d...

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Abstract

The invention discloses a quantum dot micro laser and a preparation method thereof. The quantum dot micro laser adopts a suspended silicon disk structure, and the suspended silicon disk structure comprises a silicon substrate layer, a first silicon dioxide layer, a silicon dioxide pillar layer and a silicon dioxide disk layer which are sequentially arranged from bottom to top, wherein the upper surface of the silicon dioxide disk layer is coated with a quantum dot layer in a suspended manner, and the quantum dot layer is covered with a second silicon dioxide layer. According to the preparation method, a micro-cavity of the suspended silicon disk structure is formed by adopting a photoetching process and an RIE etching process, so that the micro-cavity is annealed at a high temperature, then coated with quantum dots of different sizes in a suspended manner, and evaporated with silicon dioxide. The quantum dot micro laser can obtain white laser, has extremely high optical gain and extremely low loss, is beneficial to integration with optoelectronic devices, and can obtain high light conversion efficiency and low threshold.

Description

Technical field [0001] The present invention relates to a microlaser A quantum dot and a preparation method, belonging to the field of laser technology. Background technique [0002] Semiconductor quantum dot material is an artificial design of new semiconductor materials, carriers move in the three spatial directions is constrained, having strong three-dimensional quantum confinement effect, reflect the significant quantum tunneling, quantum interference , Coulomb blockade and nonlinear optical effects, etc., is the physical basis for a new generation of solid-state quantum devices, there is an extremely important potential applications in nanoelectronics, optoelectronics, and a new generation of ultra large scale integrated circuits. [0003] Currently, the use of a material of a quantum dot laser sources implement white light laser, a white light laser in the conversion process, most of the laser energy is converted into the broad spectrum light, light angle significantly incr...

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Application Information

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IPC IPC(8): H01S5/34H01S5/02H01S5/347
CPCH01S5/3412H01S5/347H01S5/021H01S5/0207H01S5/0206Y02P70/50
Inventor 朱刚毅叶鹏秦飞飞严星灿
Owner NANJING UNIV OF POSTS & TELECOMM
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