Method of employing ion implantation to prepare ultra low surface doping concentration low sheet resistance silicon solar cell

A silicon solar cell, surface doping technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing the shading area of ​​the front surface of the cell, low concentration of junction defects, etc., to achieve improved electrical performance, flexible process, good controllability

Inactive Publication Date: 2014-05-21
SHANGHAI SHENZHOU NEW ENERGY DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above problems, an object of the present invention is to use annealing to fully activate the doped impurities after ion implantation, so that the defect concentration in the junction region is very low, and to provide a method for preparing a low square resistance emitter without increasing the recombination of

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  • Method of employing ion implantation to prepare ultra low surface doping concentration low sheet resistance silicon solar cell

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Embodiment 1

[0034] A method for manufacturing a low square resistance silicon solar cell with an ultra-low surface doping concentration by ion implantation, comprising the following steps:

[0035] (1) Cleaning the surface of the P-type monocrystalline silicon wafer and making the textured surface is a surface formed by a pyramid, an inverted pyramid or a pit-like structure with a size of 0.1 to 100 microns;

[0036] (2) The method of ion implantation is used to inject phosphorus element into one side of the monocrystalline silicon wafer after texturing to form a PN junction, which specifically includes the following steps: fully cleaning the surface of the silicon wafer (including cleaning with ammonia water / hydrogen peroxide; cleaning with HCl / HF ), use an ion implanter to scan and implant P ions into the silicon wafer with an implantation energy of 30KeV, and then use a cleaning step (including ammonia / hydrogen peroxide, sulfuric acid / hydrogen peroxide, hydrochloric acid / hydrogen peroxi...

Embodiment 2

[0042] A method for manufacturing a low square resistance silicon solar cell with an ultra-low surface doping concentration by ion implantation, comprising the following steps:

[0043] (1) Cleaning the surface of the P-type monocrystalline silicon wafer and making the textured surface is a surface formed by a pyramid, an inverted pyramid or a pit-like structure with a size of 0.1 to 100 microns;

[0044](2) The method of ion implantation is used to inject phosphorus element into one side of the monocrystalline silicon wafer after texturing to form a PN junction, which specifically includes the following steps: fully cleaning the surface of the silicon wafer (including cleaning with ammonia water / hydrogen peroxide; cleaning with HCl / HF ), use an ion implanter to scan and implant P ions into the silicon wafer in 8 scans with an implantation energy of 5KeV, and then use a cleaning step (including ammonia / hydrogen peroxide, sulfuric acid / hydrogen peroxide, hydrochloric acid / hydrog...

Embodiment 3

[0050] Using the standard texturing method, the size of the pyramid on the suede surface is ~2um. After cleaning with HCl / HF, use an ion implanter to implant 2.8E15 doses of P with an implantation energy of 15KeV, and then wash with ammonia / hydrogen peroxide-HCl cleaning-HF cleaning After that, place the silicon wafer in 5-20% O 2 Anneal at 830-860°C for 10-20 minutes in a concentrated oxidizing atmosphere, (resistance after annealing is 80-85Ω / sq, ECV test shows that the surface concentration of phosphorus impurities is 3 , Junction depth is 0.3~0.5um), after annealing, use PECVD to plate SiNx film with a thickness of ~80nm, and finally use screen printing to complete metallization and sintering. After completion, the cell efficiency can reach 19.34% conversion efficiency.

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Abstract

The invention relates to a method of employing ion implantation to prepare an ultra low surface doping concentration low sheet resistance silicon solar cell, so cleaning velvet can be carried out on a surface of a P type monocrystalline wafer; the method comprises the steps of: employing the ion implantation method to inject phosphor element on one surface of the velvet monocrystalline wafer so as to form a PN junction; carrying out high temperature annealing and growing oxide layer on the monocrystalline wafer; continuously depositing a passivation/anti-reflection film on a N type surface; screen printing and drying a positive electrode and a back side electrode; carrying out sintering processing preparation so as to obtain the ultra low surface doping concentration low sheet resistance silicon solar cell. Compared with the prior art, the method is good in controllability, simple in process, flat in a junction surface, flexible in technology, and good in uniformity and repeatability.

Description

technical field [0001] The invention relates to a method for preparing a silicon solar cell, in particular to a method for manufacturing a silicon solar cell with ultra-low surface doping concentration and low square resistance by ion implantation. Background technique [0002] In recent years, under the stimulation of multiple factors such as energy crisis and climate change, the global photovoltaic market has maintained sustained and rapid development. Since the civilian solar cells that can be used for commercial purposes have been put into the market, especially in the 21st century, the growth rate of the application of solar cells has always maintained a relatively high speed. [0003] Solar cells use the electronic properties of semiconductor materials to directly convert sunlight into electrical energy. At present, the technical route of conventional commercial crystalline silicon solar cells is as follows: first, sort the incoming materials, then clean the damaged l...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L21/26506H01L31/1804Y02E10/547Y02P70/50
Inventor 周利荣沈培俊李怀辉张忠卫胡剑豪
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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