Multilayer-film etchant, concentrated etchant, and etching method
A technology of multilayer film and etching solution, which is applied in the field of etching solution for multilayer film, can solve problems such as blockage of etching device piping, disconnection, hole blockage of spray nozzles, etc., and achieve the effect of light environmental burden
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[0102] (Example 1)
[0103] 0.06 mass % of sulfuric acid, 2.50 mass % of glycolic acid, 0.44 mass % of aspartic acid, 0.87 mass % of glutamic acid, 0.66 mass % of β-alanine, 1.61 mass % of 1-amino-2-propanol, benzene 0.11 mass % of baseurea, ethylenediaminetetraacetic acid (hereinafter also referred to as "EDTA".) 0.88 mass % of the etching solution raw material and water 92.87 mass % were prepared to prepare an etching concentrate.
[0104] 35% hydrogen peroxide and an etching concentrate were mixed, and the etching liquid whose hydrogen peroxide concentration is 5.30 mass % was prepared. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might become 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the entire etching solution and the results of each evaluation item.
Example Embodiment
[0105] (Example 2)
[0106] 0.07% by mass of sulfuric acid, 2.50% by mass of glycolic acid, 0.45% by mass of aspartic acid, 0.88% by mass of glutamic acid, 0.66% by mass of β-alanine, 1.61% by mass of 1-amino-2-propanol, benzene 0.11 mass % of base urea, 0.88 mass % of ethylenediaminetetraacetic acid, and 0.33 mass % of polyethylene glycol (hereinafter also referred to as "PEG") were prepared by mixing raw materials of etching solution and 92.51 mass % of water to prepare etching concentrate .
[0107] 35% hydrogen peroxide and an etching concentrate were mixed, and the etching liquid whose hydrogen peroxide concentration is 5.30 mass % was prepared. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might become 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the entire etching solution and the results of each evaluation item.
Example Embodiment
[0108] (Example 3)
[0109] 0.19 mass % of nitric acid, 2.05 mass % of glycolic acid, 0.44 mass % of aspartic acid, 0.90 mass % of glutamic acid, 0.66 mass % of β-alanine, 1.94 mass % of 1-amino-2-propanol, benzene An etching liquid raw material composed of 0.11 mass % of baseurea and 0.87 mass % of ethylenediaminetetraacetic acid and 92.84 mass % of water were prepared to prepare an etching concentrate.
[0110] 35% hydrogen peroxide and an etching concentrate were mixed, and the etching liquid whose hydrogen peroxide concentration is 5.30 mass % was prepared. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might become 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the entire etching solution and the results of each evaluation item.
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