Multilayer-film etchant, concentrated etchant, and etching method

A technology of multilayer film and etching solution, which is applied in the field of etching solution for multilayer film, can solve problems such as blockage of etching device piping, disconnection, hole blockage of spray nozzles, etc., and achieve the effect of light environmental burden

Active Publication Date: 2016-07-13
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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AI-Extracted Technical Summary

Problems solved by technology

[0011] The third item is the life of the etching solution itself
When deposits are generated due to etching, the piping of the etching device may be clogged, or the hole of the shower head that sprays the etching solution may be clogged.
These phenomena ca...
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Method used

[0066] Cu and Mo are etched and dissolved in the etching solution, thereby promoting the decomposition of hydrogen peroxide. It is considered that the chelating agent coordinates with metal ions such as Cu and Mo, prevents the metal ions from contacting hydrogen peroxide, and suppresses the decomposition of hydrogen peroxide. Therefore, in this specification, a chelating agent can be considered as a hydrogen peroxide decomposition inhibitor.
[0184] Comparative Example 1 to Comparative Example 6 are examples containing azole compounds. As the azole compound, 5-amino-1H-tetrazole was used. As an effect of using the azole compound, the etching rate of Cu can be supp...
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Abstract

When an etchant that alone can etch a multilayer film comprising a copper layer and a molybdenum layer is used during mass production, it is important for the cross-sectional shape of an edge after etching to satisfy the shape requirement of having a forward taper without an undercut, and that no precipitate be formed in the etchant. A multilayer-film etchant containing a copper layer and a molybdenum layer contains hydrogen peroxide, an inorganic acid, an acidic organic acid, a neutral organic acid, an amine compound, and a hydrogen peroxide decomposition inhibitor, but not an azole compound, and therefore no reaction products are generated from a reaction with the hydrogen peroxide, and no precipitates form in the etchant. Furthermore, the cross-sectional shape of the edge after etching can be formed into a desirable forward tapering shape. Containing no phosphorus compounds or fluorine compounds, the etchant will case minimal damage to the environment when disposed.

Technology Topic

DecompositionOrganic acid +6

Image

  • Multilayer-film etchant, concentrated etchant, and etching method
  • Multilayer-film etchant, concentrated etchant, and etching method
  • Multilayer-film etchant, concentrated etchant, and etching method

Examples

  • Experimental program(8)
  • Comparison scheme(11)
  • Effect test(1)

Example Embodiment

[0102] (Example 1)
[0103] 0.06 mass % of sulfuric acid, 2.50 mass % of glycolic acid, 0.44 mass % of aspartic acid, 0.87 mass % of glutamic acid, 0.66 mass % of β-alanine, 1.61 mass % of 1-amino-2-propanol, benzene 0.11 mass % of baseurea, ethylenediaminetetraacetic acid (hereinafter also referred to as "EDTA".) 0.88 mass % of the etching solution raw material and water 92.87 mass % were prepared to prepare an etching concentrate.
[0104] 35% hydrogen peroxide and an etching concentrate were mixed, and the etching liquid whose hydrogen peroxide concentration is 5.30 mass % was prepared. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might become 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the entire etching solution and the results of each evaluation item.

Example Embodiment

[0105] (Example 2)
[0106] 0.07% by mass of sulfuric acid, 2.50% by mass of glycolic acid, 0.45% by mass of aspartic acid, 0.88% by mass of glutamic acid, 0.66% by mass of β-alanine, 1.61% by mass of 1-amino-2-propanol, benzene 0.11 mass % of base urea, 0.88 mass % of ethylenediaminetetraacetic acid, and 0.33 mass % of polyethylene glycol (hereinafter also referred to as "PEG") were prepared by mixing raw materials of etching solution and 92.51 mass % of water to prepare etching concentrate .
[0107] 35% hydrogen peroxide and an etching concentrate were mixed, and the etching liquid whose hydrogen peroxide concentration is 5.30 mass % was prepared. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might become 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the entire etching solution and the results of each evaluation item.

Example Embodiment

[0108] (Example 3)
[0109] 0.19 mass % of nitric acid, 2.05 mass % of glycolic acid, 0.44 mass % of aspartic acid, 0.90 mass % of glutamic acid, 0.66 mass % of β-alanine, 1.94 mass % of 1-amino-2-propanol, benzene An etching liquid raw material composed of 0.11 mass % of baseurea and 0.87 mass % of ethylenediaminetetraacetic acid and 92.84 mass % of water were prepared to prepare an etching concentrate.
[0110] 35% hydrogen peroxide and an etching concentrate were mixed, and the etching liquid whose hydrogen peroxide concentration is 5.30 mass % was prepared. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might become 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the entire etching solution and the results of each evaluation item.

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