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System and method for processing wafer surface material layer

A surface material layer, processing system technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effect of improving processing efficiency, increasing light-emitting area, and flexible processing technology

Active Publication Date: 2008-12-24
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
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Problems solved by technology

[0004] The purpose of the present invention is to provide a processing system and method for a material layer on the surface of a semiconductor wafer, which can fundamentally solve the problem of uniformity of ultraviolet light intensity when using ultraviolet rays to process the material layer

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  • System and method for processing wafer surface material layer
  • System and method for processing wafer surface material layer
  • System and method for processing wafer surface material layer

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Embodiment Construction

[0050] In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0051]In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many ways other than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the present invention is not limited to the specific examples disclosed below.

[0052] Figure 4 It is a schematic structural diagram of a wafer surface material layer processing system according to an embodiment of the present invention. The schematic diagrams described are only examples, which should not limit the scope of protection of the invention here. Such ...

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Abstract

The invention discloses a processing system and a processing method of a surface material layer of a wafer. The system comprises a processing chamber, a radio-frequency power source and an exciter coil connected with the radio-frequency power source. The upper part of the interior of the processing chamber is filled with plasma ionized by the radio-frequency power source and the exister coil. A semiconductor wafer is arranged at the bottom of the interior of the processing chamber and a transparent material layer is arranged between the plasma and the semiconductor wafer. Ultraviolet light emitted by the plasma passes through the transparent material layer and then reaches the surface material layer of the semiconductor wafer. The processing system and the processing method of the surface material layer of the wafer can radically solve the problem of the intensity uniformity of the ultraviolet light when the ultraviolet light is utilized for processing the material layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a system and method for processing a material layer on the surface of a semiconductor wafer. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices already have deep submicron structures. In the process nodes below 90nm, increasing attention is paid to the improvement of switching speed and driving current of NMOS devices and PMOS devices. The way to improve the operating speed by reducing the gate length and the thickness of the gate oxide layer of the MOS transistor is no longer applicable due to the existence of the short channel effect below 90nm. Studies have found that the formation of a stress layer on the surface of the doped region can generate mechanical stress in the layer or substrate containing doped impurities, which can increase the mobility of doped impurities, increased dopant...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/268H01L21/3105H01L21/336H01L21/67
Inventor 吴汉明张春光
Owner SEMICON MFG INT (SHANGHAI) CORP
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