Method of manufacturing Er-doped silicon nano-dot array and laser ablation apparatus used therein

Abstract

A laser ablation apparatus. A target has a silicon region and an erbium region divided in a chamber with a silicon substrate opposite to the target. A target rotating axis rotates the target to alternately radiate laser light onto the silicon region and the erbium region, a laser generator irradiates laser light for generating a plume by ablating silicon from the silicon region and erbium from the erbium region outside the chamber.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to an optoelectronic device, and more particularly, to a method of manufacturing an Er-doped silicon nano-dot array applicable to a silicon optoelectronic device and a laser ablation apparatus used therein. [0003] 2. Description of the Related Art [0004] In order to use silicon having an indirect energy band gap as a material of an optoelectronic device, the development of an efficient method of doping silicon with a luminous substance is required. Also, the development of a method of forming nanometer level silicon structure is required. [0005] Erbium (Er) is treated as a luminous material, which will be doped on silicon. Er-doped silicon has a photoluminescenec (PL) peak of 1.54 μm and thus is noticed in view of a silicon-based optoelectronic device. To manufacture an optoelectronic device using Er-doped silicon, a method of manufacturing a silicon film, which is effectively doped wit...

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Benefits of technology

[0009] To solve the above-described problems, it is a first objective of the present invention to provide a method of manufacturing Er-doped silicon arrays by which an Er-doped silicon film having a high purity can be manufactured by preventing contamination due to impurities and the Er-doped silicon film can be patterned as uniformly arrayed Er-doped silicon structures having a nanometer size.

[0025] According to the present invention, an Er-doped silicon thin film having a high efficiency and a high purity can be manufactured in an ultrahigh vacuum. As a result, the Er-doped silicon thin film can be applied in the manufacture of a silicon nano optoelectronic device using silicon as an optoelectronic material. Thus, Er-doped silicon nano-dot arrays can be manufactured using the regular array of copolymers and the selective etching.

Problems solved by technology

Here, impurities may occur due to the sintering.

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