Preparation method of oxide dilute magnetic semiconductor nanodot array with high saturation magnetization

A nano-dot array, dilute magnetic semiconductor technology, used in ion implantation plating, metal material coating process, coating and other directions

Inactive Publication Date: 2018-05-18
山西师范大学
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, no one has applied this alumina template technology to prepare transition metal-doped oxide dilute magnetic semiconductor nanodot arrays. More importantly, we can greatly improve the dilute magnetic semiconductor nanodot array with this method. The magnetic moment of the dot array, this result is of great significance for future device applications such as spin storage and logic functions

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  • Preparation method of oxide dilute magnetic semiconductor nanodot array with high saturation magnetization
  • Preparation method of oxide dilute magnetic semiconductor nanodot array with high saturation magnetization
  • Preparation method of oxide dilute magnetic semiconductor nanodot array with high saturation magnetization

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Embodiment 1

[0055] Firstly, the double-pass porous ultra-thin anodized aluminum template was prepared by two-step anodic oxidation method: the high-purity aluminum sheet (99.99%) was cleaned and polished as the anode, and the graphite was used as the cathode for the first anodic oxidation. The electrolyte is 0.3mol / L oxalic acid aqueous solution, the oxidation voltage is 30-60V, specifically 40V, the temperature is 0-10°C, specifically 0°C, and the first oxidation time is 2-5h, specifically 2h. After the first anodic oxidation is completed, put the aluminum sheet oxidized for the first time face down in a mixture of phosphoric acid, chromic acid and water at a water bath temperature of 60°C, soak for 4 hours to remove the porous alumina layer after the first oxidation, The mass percentage of phosphoric acid in the mixed solution is 6.0%, and the mass percentage of chromic acid is 1.8%; the conditions of the second oxidation are the same as those of the first oxidation, but the oxidation ti...

Embodiment 2

[0062] The preparation method is the same as that of Example 1, except that the alumina template is soaked in a 5% by mass phosphoric acid solution at 30° C. for 60 minutes.

[0063] image 3 with Figure 4 The ultra-thin porous anodized aluminum template and (In 0.95 Fe 0.05 ) 2 o 3 The scanning electron microscope image of the nano-dot array shows that the obtained nano-dot array and the holes of the alumina template are distributed in hexagonal symmetry, and the diameter of the nano-dot is basically the same as the template pore size. The average diameter of the prepared nano-dot array is 65nm, and the height is 40nm. The nanodot pitch is 105nm.

Embodiment 3

[0065] Preparation method is identical with embodiment 1, and difference is: (In 0.95 Fe 0.05 ) 2 o 3 When the ceramic target is prepared, the powder calcining temperature is 850°C, and the target sintering temperature is 1050°C; moreover, the alumina template is immersed in a 5% by mass phosphoric acid solution at 30°C for 75 minutes.

[0066] Figure 5 with Image 6 Respectively the ultra-thin porous anodized aluminum template and (In 0.95 Fe 0.05 ) 2 o 3 The scanning electron microscope image of the nano-dot array shows that the obtained nano-dot array and the holes of the alumina template are distributed hexagonally symmetrically, and the diameter of the nano-dot is basically the same as the template pore size. The average diameter of the prepared nano-dot array is 77nm, and the height is 40nm. The nanodot pitch is 105nm.

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Abstract

The invention discloses a preparing method for high-saturation-magnetization (In1-xFex)2O3 oxide diluted magnetic semiconductor nanometer point arrays. A prepared bi-pass porous ultra-thin anodised aluminum template is transferred to an Al2O3(0001) substrate, the large-area (In1-xFex)2O3 nanometer point arrays highly orderly grow on the substrate covered with the template through a pulsed laser deposition method, and finally the template is removed. Obtained (In1-xFex)2O3 nanometer points with the room-temperature ferromagnetism are 30-100 nm in diameter, 20-40 nm in height, 65-150 nm in distance and 176 Gb / in2-33 Gb / in2 in point density, a sample represents the ferromagnetism at the temperature of 300 K, and under the condition that the saturation magnetization ratios of the nanometer point arrays are the same, prepared films with the same thickness are greatly improved.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a high saturation magnetization (In 1-x Fe x ) 2 o 3 Preparation method of oxide dilute magnetic semiconductor nano-dot array. Background technique [0002] Diluted magnetic semiconductor materials integrate the charge and spin properties of electrons, have semiconductor and magnetic properties at the same time, and exhibit many excellent magnetic, magneto-optical, and magnetoelectric properties, making them widely concerned in the field of spintronics. . Since Dietl et al. first theoretically predicted the room temperature ferromagnetism of Mn-doped ZnO dilute magnetic semiconductors in 2000, people have carried out a lot of research work on oxide dilute magnetic semiconductors. where Fe-doped In 2 o 3 The study of dilute magnetic semiconductors has attracted much attention, mainly because Fe is in In 2 o 3 The solid solubility in the main body is high,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/08C23C14/28
Inventor 许小红陈丹江凤仙马文睿
Owner 山西师范大学
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