109 results about "Oxygen plasma etching" patented technology

A method for oxygen depleted plasma etching and mixed mode plasma etching are disclosed. The method includes using an oxygen free etch plasma or a substantially oxygen free etch plasma at a high temperature to etch a stack including a plurality of layers of thin film materials. The oxygen depleted etching prevents or substantially reduces by-product re-deposition of titanium oxides generated by etching of titanium thin films in the stack. The titanium oxides can serve as a secondary mask layer that can cause defects in devices formed from the stack. Mixed mode plasma etching can include etching the stack with an oxygen free plasma, a substantially oxygen free plasma, and an oxygen containing plasma at different stages of a process.

A method of nanopatterning includes the steps of providing a resist film (12) and forming a pattern in the resist film (12). The resist film (12) includes a copolymer consisting of an organosilicone component and an organic component. An article (10) includes a substrate (14) and the resist film (12) disposed on the substrate (14). The copolymer of the organosilicone component and the organic component is sufficiently elastic, due to the presence of the organosilicone component, to be capable of resisting fracture and delamination during mold release. Furthermore, during pattern formation, the copolymer develops relatively low surface energy at an interface with the surface of a mold, as compared to conventional polymeric materials, and preferentially adheres to the substrate (14) rather than the mold, which provides for relatively easy mold release. The presence of the organosilicone component in the copolymer also allows the resist film (12) to exhibit excellent resistance to oxygen plasma etching.

The invention discloses a method for preparing patterned graphene. In the method, a photoresist is patterned on a device substrate by a microelectronic process such as UV lithography and electron beam lithography, and windows are formed at positions needing graphene; by a graphene transfer method, large-area graphene is transferred onto the patterned photoresist; and the photoresist and the graphene thereon are stripped by an acetone immersion method so as to obtain the patterned graphene required by the device. Compared with the prior art, the method has the advantages of accurate positioning, and does not require etching or manufacturing an imprint template so as to have low cost. Through the method, the patterned graphene is accurately positioned, and the integration of large-area devices is easy to realize. Besides, by exposure and stripping methods, an oxygen plasma-etching step is avoided, so the reduction of the device performance caused by radiation damage is avoided.

A process for patterning a nanocarbon material includes a step of forming a nanocarbon layer on a substrate; a step of forming a first metal layer on the nanocarbon layer to pattern the first metal layer, the first metal layer containing at least one selected from the group consisting of zinc, tin, indium, aluminum, and titanium; and a step of etching the nanocarbon layer with oxygen plasma using the first metal layer as a positive pattern. Also, a method for manufacturing a semiconductor device including a semiconductor layer containing a nanocarbon material includes a step of patterning a nanocarbon material by the above process; and, a semiconductor device containing a nanocarbon material includes a semiconductor layer including a nanocarbon sub-layer patterned by the process.

Disclosed are methods for fabricating pyrolysed carbon nanostructures. An example method includes providing a substrate, depositing a polymeric material, subjecting the polymeric material to a plasma etching process to form polymeric nanostructures, and pyrolysing the polymeric nanostructures to form carbon nanostructures. The polymeric material comprises either compounds with different plasma etch rates or compounds that can mask a plasma etching process. The plasma etching process may be an oxygen plasma etching process.

Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on a substrate to a thickness of less than 15 nanometers (nm). A number of via holes is defined above the seed layer. A layer of copper is deposited over the seed layer using electroless plating to fill the via holes to a top surface of the patterned photoresist layer. The method can be repeated any number of times, forming second, third and fourth layers of copper. The photoresist layers along with the seed layers in other regions can then be removed, such as by oxygen plasma etching, such that a chemical mechanical planarization process is avoided.

A method of masking high-aspect ratio structures on a wafer includes submerging the wafer in a resist material so that the high-aspect ratio structures are at least partially embedded within the resist material. The resist material is cured and further processing steps, such as for example oxygen plasma etching, are applied, for example to remove portions of the resist material and material from upper portions of the high-aspect ratio structures.

Silicon-containing polymers comprising recurring units of three components represented by the general formula (1) are novel wherein R¹, R² and R³ are hydrogen or C_1-10 alkyl, R⁴, R⁵ and R⁶ are hydrogen, C_1-20 alkyl or haloalkyl, or C_6-20 aryl, R⁷ is C_4-20 alkyl, n is 1 to 5, p, q and r are positive numbers. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching

The invention provides a method for preparing a graphene image with a specific edge. The method comprises the steps of preparing a graphene thin film; forming an artificial defect on the graphene thin film; carrying out anisotropic etching on the graphene thin film by H(hydrogen)-containing plasma and forming a graphene crystal orientation mark image along the artificial defect; aligning the graphene thin film with the graphene crystal orientation mark image to a target substrate and transferring the graphene thin film to the target substrate; and imaging the graphene thin film by using a photoetching technology and an oxygen plasma etching technology in sequence, thus obtaining the graphene image with the specific edge. By the method for preparing the graphene image with the specific edge provided by the invention, the image with the specific edge can be prepared and therefore graphene thin films with different properties are obtained; the application of graphene in different fields is facilitated; and the method is simple and compatible with the conventional CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology, thus being beneficial to popularization application.

The invention discloses a method for preparing loosened polyimide infrared absorption film, which includes steps that: a piece of polyimide film is prepared by coating photosensitive polyimide resin on the surface of a substrate in rotating mode and then performing imine processing; imine processing leads the polyimide film to be well adhered to the substrate; photo-etching and developing processes are adopted to lead the polyimide film to form on surfaces of image elements; loosening is conducted, and the polyimide film is corroded to remove aluminum powder particles mixed in the polyimide film; and the thickness of polyimide film can be controlled with an oxygen plasma etching method, thermal mass can be reduced, and simultaneously surfaces of the aluminum powder particles can be ensured to be partially or totally exposed so that the aluminum powder particles can be totally removed. The loosened polyimide infrared absorption film prepared with the method overcomes defects that black gold absorption film is poor in mechanical strength, not apt to form images and high in thermal mass, improves infrared absorption efficiency compared with thin metal absorption film, is favorable for improving performance of non-refrigerating detectors, and has practical application value.

The invention provides a manufacturing method of a surface-enhanced Raman scattering (SERS) substrate. The manufacturing method comprises the following steps: A, acquiring a high-molecular polymer film, wherein the high-molecular polymer film is made of a high-molecular polymer material which can be subjected to oxygen plasma etching; B, performing oxygen plasma etching treatment on the high-molecular polymer film to form nanorod arrays which are arranged vertically upwards; and C, covering the surfaces of the nanorod arrays with a metal layer having SERS activity to form metal nanorod arrays which are arranged upwards in order to finish manufacturing of the SERS substrate. In the method, the sizes and gaps of metal nanorods can be controlled at a nanoscale, so that the manufactured SERS substrate has a large specific surface area; the adsorption of molecules to be tested is facilitated; and the reduction of luminous reflectance and intercoupling of electric fields among the metal nanorods are facilitated. Thus, the Roman scattering enhancing effect can be enhanced greatly through the SERS substrate.

The invention relates to a method using a one-step template method to prepare an ordered ferroelectric nanodot array. The method includes the steps of S1, using a pulsed laser deposition method to deposit a high-performance epitaxy ferroelectric film on a substrate; S2, transferring single-layer PS small spheres to the surface of the ferroelectric film to serve as the mask plate; S3, performing oxygen plasma etching on the substrate with the mask plate to obtain a to-be-etched sample; S4, etching the to-be-etched sample in an ion beam etching machine; S5, removing the residual mask plate to obtain the ordered ferroelectric nanodot array. The method has the advantages that the method is simple, convenient in template removing and suitable for large-scale preparation, and the prepared ferroelectric nanodot array keeps the excellent epitaxy and ferroelectric performance of the ferroelectric film.

A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 Å thick, and preferably at least 100 Å thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.

The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe. The semiconductor substrate (20) is cleaned using a first oxygen plasma process (14) to remove foreign matter (30) from the surface (28) of the substrate (20). The substrate surface (28) is next immersed in a hydrochloric acid solution (16) to remove additional foreign matter (30) from the surface (28) of the substrate (20). The immersion step is followed by a second oxygen plasma etch process (18), passivate the surface with a passivation layer (34), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.

Disclosed are an ultra-thin touch panel and a method of fabricating the same. Particularly, the ultra-thin touch panel according to an embodiment of the present disclosure includes a flexible substrate, a plurality of first sensing electrodes arranged in a first direction on the flexible substrate, an adhesive insulating layer formed on the flexible substrate and the first sensing electrodes, and a plurality of second sensing electrodes arranged in a second direction, which intersects the first direction, on the flexible substrate and the adhesive insulating layer using a wet transfer method, wherein the flexible substrate is patterned in a shape corresponding to the first and second sensing electrodes by oxygen plasma etching to form a polygonal mesh structure.

A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The process is particularly suitable for preparing a trench for subsequent argon ion milling. Printhead integrated circuits fabricated by a process according to the invention have improved ink channel surface profiles and/or surface properties.

The invention discloses a method for preparing a parallel-oriented FePt magnetic nano-composite film, which is characterized by comprising the following steps: 1, utilizing an amphiphilic block copolymer PS-P4VP to self-assemble into a reverse micelle in methylbenzene, and then adding metal salt, namely FeCl3 and H2PtCl6 into reverse micelle solution to form a metal salt supported reverse micelle; 2, utilizing a spin-coating method to obtain a reverse micelle array on a silicon substrate, and obtaining an FePt nano-particle array with good monodispersity through oxygen plasma etching and hydrogen plasma etching; 3, using a magnetic control sputtering method to cover an SiO2 protective layer on the FePt nano-particle array; and 4, performing high-temperature annealing on a sample under protective atmosphere to finish the production of the parallel-oriented FePt magnetic nano-composite film.