31 results about "Oxygen plasma etching" patented technology

The invention belongs to the technical field of chemical vapor deposition of diamond films, and particularly relates to a high-temperature pulse bias assisted diamond single crystal heteroepitaxial growth method, which comprises the following steps: carrying out ultrasonic cleaning and etching pretreatment on an Ir / YSZ / Si composite substrate; self-assembling a polystyrene nanosphere template on the surface of the substrate; placing the substrate covered by the template in a low-power oxygen plasma etching machine for etching to form a regular nano pit array; putting the etched substrate into a microwave plasma chemical vapor deposition (MPCVD) reaction cavity, and applying-300V short pulse bias voltage to realize nucleation of high-density diamond crystal nuclei; after the bias voltage is closed, conventional diamond epitaxial growth continues to be carried out in the MPCVD cavity; after the growth is finished, the self-supporting diamond film is separated through chemical dissolution, a nano pit template is formed through pre-etching, and one-time-300V short pulse bias is combined, so that high-density and highly-uniform sp3 crystal nucleus nucleation can be realized on the surface of the substrate, and the distribution consistency and nucleation efficiency of diamond crystal nucleation are improved.

The invention belongs to the field of semiconductor processes and devices, and particularly relates to a method for preventing photoresist denaturation in the process of etching graphene by oxygen plasma based on an isolating layer. The method comprises the following steps: transferring graphene to a substrate through a mechanical stripping and transferring technology; exposing the two ends of the graphene in the environment through photoetching, and evaporating Se serving as an isolating layer onto the developed graphene pattern; covering photoresist to protect Se from being influenced by subsequent etching, and performing photoetching to form a graphene channel; processing the graphene substrate covered by the photoresist by adopting oxygen plasma, and etching a graphene channel; and annealing to remove Se. The method is suitable for manufacturing semiconductor devices, and has wide application prospects in the fields of micromachining, patterning and functionalization treatment of graphene-based materials. The method can be used for preparation processes of graphene integrated circuits, graphene sensors, photoelectric devices and other microelectronic devices, and especially has a promotion effect on high-precision graphene processing.

The invention discloses a UiO-66-based monovalent cation selective separation membrane as well as a preparation method and application thereof, and belongs to the technical field of membrane separation. The preparation method comprises the following steps: mixing a zirconium n-propoxide solution with n-propyl alcohol, glacial acetic acid and DMF (Dimethyl Formamide) to prepare a zirconium cluster solution; performing oxygen plasma etching and acrylic acid grafting pretreatment on the BPPO base film to obtain a BPPO / CA film; finally, the BPPO / CA membrane, a zirconium cluster solution, terephthalic acid and triethylamine are subjected to an original growth reaction in a two-chamber reaction tank, and the UiO-66-based monovalent cation selective separation membrane is prepared. The preparation method provided by the invention is simple and mild in condition, and the prepared membrane has good cation selectivity and is suitable for the fields of industrial-grade TMAH solution purification and the like.

The invention discloses a corrosion-resistant composite material for an industrial ton bag and a preparation method of the corrosion-resistant composite material. The preparation method of the composite material comprises the following steps: firstly, carrying out plasma activation treatment on polypropylene fibers to improve the surface activity of the polypropylene fibers, then immersing the polypropylene fibers into a graphene oxide dispersion liquid, carrying out drying and heat setting to form a graphene reinforced support layer, and then carrying out plasma etching through carbon tetrafluoride and oxygen to construct a micro-nano dual-scale structure on the surfaces of the fibers so as to obtain the graphene reinforced composite material. And finally, performing high-pressure emulsification on fluorinated polyolefin emulsion containing polyethylene, fluoroelastomer, nano silicon dioxide and the like, blade-coating the surface of the fiber with the emulsified fluorinated polyolefin emulsion, and performing hot-pressing compounding. Through multi-layer synergistic modification, the mass change rate of the composite material in a strong acid and strong alkali environment is lower than 1%, the strength retention rate exceeds 89% after ultraviolet aging for 500 h, the peel strength reaches 8.2 N / 25 mm, the composite material has excellent corrosion resistance, aging resistance and interface bonding force, and the service life of the ton bag in a severe environment is effectively prolonged.

The invention belongs to the technical field of flexible electronic devices and carbon materials, and particularly discloses a carbon thorn ball array film based on single-layer template auxiliary assembly and a preparation method and application of the carbon thorn ball array film. The carbon thorn ball array film is prepared according to the following steps: S1, preparing a layer of polystyrene microsphere array on a hydrophilic substrate through a gas-liquid interface self-assembly method; s2, reducing the size of the microspheres by adopting oxygen plasma etching, and forming structural gaps among the microspheres; s3, immersing the PS microsphere array into a solution containing aniline to form an ANI / PS composite structure; s4, initiating aniline polymerization through ferric nitrate, and generating a polyaniline coating layer on the PS surface; and S5, annealing in an inert atmosphere to form the urchin-shaped hollow carbon thorn ball array. Therefore, the ultrathin, two-dimensional and ordered carbon array material with surface microstructure topological characteristics is successfully constructed, and the carbon array material is successfully applied to the flexible pressure sensor.

The invention discloses an ultrathin electromagnetic shielding layer based on a magnetron sputtering technology and a preparation method thereof, and the method comprises the steps: carrying out the oxygen plasma etching of the surface of a flexible substrate through a reactive ion etching technology, the reactive ion etching power ranges from 100 W to 140 W, so that an activated substrate surface chemical group is formed on the surface of the flexible substrate; a seed layer is formed on the etched surface of the flexible substrate in a sputtering mode through the magnetron sputtering technology, the thickness of the seed layer ranges from 1 nm to 100 nm, and the roughness of the seed layer is 10 nm or below; forming a layer of shielding metal film on the surface of the seed layer through sputtering by using a magnetron sputtering technology, wherein the thickness of the shielding metal film is less than 1 [mu] m; wherein the sputtering temperature in the magnetron sputtering process ranges from 100 DEG C to 150 DEG C.

The invention discloses a carbon material, a preparation method and application thereof, and belongs to the field of carbon materials. The carbon material is hard carbon, and the carbon vacancy of the carbon material is 0.11-0.58; the relational expression of the carbon vacancy tau is defined as # imgabs0 #, and IGC is the density of carbon atoms existing in the highly oriented pyrolytic graphite in the form of SP2 hybrid carbon atom pairs; iHC is the density of carbon atoms present as SP2 hybrid carbon atom pairs in the hard carbon material. The carbon material is obtained through the steps of high-temperature hot isostatic pressing sintering, oxygen plasma etching ball milling, sintering carbonization in a kiln and the like. The carbon material with a specific carbon vacancy ratio is defined, the carbon material has excellent sodium storage performance, and a new negative electrode material selection and a technical breakthrough point are provided for sodium ion battery industrialization.

The invention discloses a flexible strain sensor array device as well as a preparation method and application thereof. The preparation method comprises the following steps: S1, spin-coating silicate glass with a non-photosensitive polyimide precursor solution to obtain a PI film with the thickness of less than 10 [mu] m; s2, preparing a Cr / Pt metal electrode by adopting photoetching and electron beam evaporation processes; s3, transferring the graphene growing on the copper foil to the surface of the PI film; s4, carrying out vacuum annealing treatment; s5, patterning the graphene by adopting photoetching and oxygen plasma etching processes to obtain a strain sensing unit with a 4 * 4 array structure; s6, covering a protective layer, and stripping the silicate glass from the PI film to obtain a flexible strain sensing unit; and S7, connecting the flexible strain sensing unit with the flexible electrode lead-out plate, and packaging by adopting polydimethylsiloxane to obtain a flexible strain sensor array device. The flexible strain sensor array device has millimeter-level resolution, high sensitivity, array uniformity and multi-channel signal stability.

The invention relates to a porous hydrophobic reduced graphene oxide membrane as well as a preparation method and application thereof, the preparation method comprises the following steps: mixing glycine and a graphene oxide dispersion liquid, heating and reducing to obtain a reduced graphene oxide dispersion liquid; selecting a hydrophilic substrate with a pore structure, and enabling the reduced graphene oxide dispersion liquid to form a film on the hydrophilic substrate to obtain a reduced graphene oxide film; performing oxygen plasma etching on the reduced graphene oxide film subjected to heating reduction by taking a porous metal film as a mask plate to obtain a porous reduced graphene oxide film; and performing hydrophobic treatment on the porous reduced graphene oxide film by using plasma to obtain the porous hydrophobic reduced graphene oxide film. The porous hydrophobic reduced graphene oxide film provided by the invention can realize accurate regulation and control of thickness and pore diameter and large-area preparation, and is low in preparation cost and simple in process; in membrane distillation, high water flux can be generated, meanwhile, high salt rejection rate can be achieved, and the membrane has good application prospects in the field of seawater desalination.

The invention relates to a preparation method and application of a Fe-doped defect-rich CuO (at) FeCoO self-supporting electrode and a CuO (at) CuxS / FeCoS self-supporting electrode. The method comprises the following steps: firstly, etching foamy copper in alkali liquor to prepare a Cu (OH) 2 nanowire array electrode as a conductive substrate; secondly, a layer of double metal hydroxide (CoFe-LDH) nanosheet is electrically deposited on the Cu (OH) 2, and a Cu (OH) 2 (at) FeCo-LDH self-supporting electrode is prepared; and then, the Cu (OH) 2 (at) FeCo-LDH is subjected to oxygen plasma etching, and the CuO (at) FeCoO self-supporting electrode is obtained. And the CuO-coated FeCoO is converted into the CuO-coated CuxS / FeCoS self-supporting electrode through vulcanization. According to the CuO-coated FeCoO self-supporting electrode provided by the invention, due to the electronic regulation and control effect of Fe on CoO and the synergistic effect of rich oxygen vacancies generated by oxygen plasma etching, the CuO-coated FeCoO self-supporting electrode has excellent oxygen evolution reaction performance and excellent durability and stability; in addition, according to the CuO (at) CuxS / FeCoS self-supporting electrode, due to the fact that part of oxide is converted into sulfide, the hydrogen evolution reaction performance of the electrode material is enhanced. The two electrode materials are respectively used as an anode material and a cathode material for water electrolysis reaction, and have a wide development prospect in the field of realizing large-scale alkaline water electrolysis hydrogen production.

This invention proposes an oxygen-enriched three-phase photocatalyst based on a superhydrophobic carbon nitride mesh, its preparation method, and its application. The method involves preparing a porous carbon fiber felt substrate through multi-stage ultrasonic cleaning, obtaining a carbon nitride mesh via pyrolysis, and then preparing a nitrogen-vacancy-modified carbon nitride mesh using argon-oxygen plasma etching. A gradient-grafted donor-acceptor composite material is prepared through gas-phase contact modification combined with liquid-phase photolithography and gradient thermopressing bonding, synergistically constructing an oxygen mass transfer channel at the gas-liquid-solid three-phase interface to achieve oxygen-enriched photocatalysis. This invention prepares the gradient-grafted donor-acceptor composite material through gas-phase contact modification combined with liquid-phase photolithography and gradient thermopressing bonding processes, constructing a robust chemical bonding interface on the carbon nitride mesh surface. This significantly enhances the bonding strength between the modified layer and the substrate material, overcoming the problem of easy detachment of the modified layer caused by relying solely on physical adsorption or weak chemical interactions in existing technologies.

The invention discloses an RDL layer preparation method based on selective chemical plating, and belongs to the field of microelectronic integration. The implementation method comprises the following steps of: depositing a polymer insulating layer on the surface of a wafer; adopting a photoetching process to enable the photoresist to cover a non-copper interconnection line area on the polymer insulating layer; taking the photoresist as a mask, etching a groove required by the copper interconnection line on the insulating layer by using an oxygen plasma etching process, but not cleaning the photoresist to obtain the insulating layer with the groove; depositing a layer of catalyst on the surface of the insulating layer; the residual photoresist is stripped by acetone, so that the catalyst outside the groove and the residual photoresist are stripped together, and only the groove is internally provided with the catalyst; a chemical copper plating solution without a catalyst is used for soaking, only a reduction reaction occurs in an insulating layer groove to grow copper, and the copper does not grow outside the groove, so that the groove is filled with the copper, a copper interconnection line is formed, and the preparation of the RDL layer is realized. The method has the advantages of high process efficiency, low cost, high precision, no need of chemical mechanical polishing and the like.

The invention relates to a composite electrode material, in particular to a boron-doped diamond and MOFs derivative composite electrode and a preparation method thereof. The composite electrode sequentially comprises a substrate, boron-doped diamond and MOFs (Metal-Organic Frameworks)-derived porous metal oxide from bottom to top, wherein the surface of the boron-doped diamond is provided with nano-gullies. The substrate material is nonmetal silicon and silicon dioxide or metal titanium and niobium. The nanometer gullies on the surface of the boron-doped diamond are prepared through oxygen plasma etching, and the depth of the nanometer gullies is 1-2 microns. The MOFs-derived porous metal oxide is prepared by oxygen plasma etching of MOFs growing on the surface of the boron-doped diamond in situ, and the height of the MOFs-derived porous metal oxide is 0.5-1.5 [mu] m. The metal oxide with selective recognition and poor conductivity is combined with the boron-doped diamond with low background current, good stability and high conductivity, the response sensitivity of the electrode can be effectively improved, and the service life of the electrode can be effectively prolonged.

The present invention discloses an antireflection film, a preparation method thereof and an application thereof. The method comprises the following steps: S1, mixing a dispersion liquid containing inorganic oxide, a photocurable adhesive and a solvent to obtain a mixed liquid; S2, coating the mixed liquid on at least one side of a transparent substrate and performing a curing treatment to obtain a hardened film; S3, placing the hardened film on a metal substrate and performing oxygen plasma etching to obtain an antireflection film. The preparation method of the antireflection film provided by the present invention has a simple process, causes no pollution to the environment during the preparation process, and can effectively improve the light transmittance.

A method for preparing porous diamond is disclosed, aiming to address the problems of high cost and low efficiency in existing methods for preparing porous diamond. The preparation method includes: 1. Cleaning the diamond and then pre-treating it by hydrogen-oxygen plasma etching at 900-950℃; 2. Sequentially depositing a titanium film and an iron film onto the diamond using magnetron sputtering; 3. Placing the titanium-iron film-coated diamond in an MPCVD device, increasing the gas pressure and power, and performing metal-catalyzed hydrogen-oxygen plasma etching at 950-1000℃; 4. Immersing the etched diamond in a mixed acid solution for high-temperature acid washing. This invention directly prepares a porous structure on the diamond surface, resulting in a denser and more uniform porous structure with a three-dimensional etched structure. The diameter of ordinary pores in the porous structure is approximately 1-20 μm, and the diameter of macropores is approximately 50 μm or more, significantly increasing the specific surface area of ​​the diamond.

The disclosure describes optical elements including pseudorandom-shaped meta-atoms as well as related methods of manufacture. In some implementations, a method includes patterning a resist layer to form a pattern of features in the resist layer. The resist layer is disposed on a substrate that includes an optical sublayer disposed on a support. The substrate further includes a hard mask sublayer disposed on the optical sublayer. The method includes performing a first oxygen plasma etch to impart a pseudorandom shape to the features in the resist layer, and subsequently performing a plurality of etching operations to cause the pseudorandom-shaped features to be transferred into the optical sublayer of the substrate.

The application relates to a graphene nanostructure preparation method, which comprises the following steps: providing a DNA nanostructure and a substrate with graphene; non-covalently modifying the graphene, and spreading the DNA nanostructure on the surface of the graphene; adding TMAPS and TEOS into a buffer solution to pre-hydrolyze and form a pre-hydrolysis solution, and silicifying the DNA nanostructure spread on the surface of the graphene in the pre-hydrolysis solution to grow a protective SiO2 shell on the surface of the DNA nanostructure, thereby obtaining a DNA-SiO2 mask; removing the graphene not covered by the DNA-SiO2 mask by using oxygen plasma etching; and removing the DNA-SiO2 mask to obtain the graphene nanostructure. According to the graphene nanostructure preparation method, the nano-etching technology based on the DNA-SiO2 mask solves the problem that the existing graphene nanostructure preparation technology cannot simultaneously meet the requirements of high precision, controllable morphology, low cost and large-scale preparation.

The invention relates to a super-hydrophobic acid and alkali resistant fabric and a processing method thereof, the processing method comprises fabric pretreatment and surface modification treatment, the fabric pretreatment is to perform oxygen plasma etching on the fabric; the surface modification treatment is plasma surface activation-impregnation-plasma induced crosslinking treatment, and chemical bond fracture and reconstruction occur on the surfaces of the fabric and the modified material under the action of plasma, so that surface activation of the acid and alkali resistant nano material, chemical bond combination between the fabric and the nano material and crosslinking polymerization of silicon resin are realized; on one hand, the nanoparticles can be better dispersed in the silicon resin, and on the other hand, the interface bonding strength between the fabric and the nanoparticles can be improved. The process is reasonable in design and simple to operate, and the prepared fabric not only has excellent low surface energy and is endowed with good droplet adhesion resistance, but also has good acid and alkali resistance and corrosion resistance, can be applied to multiple protection fields, and has high practicability.

The invention relates to a method for realizing self-healing of a nano broken junction by using a polymide high-molecular polymer as a flexible substrate, which comprises the following steps: preparing a broken junction with a gap of 20nm on a silicon wafer spin-coated with a PI high-molecular polymer by using an electron beam exposure (EBL) system, and forming a transverse gold-PI high-molecular polymer-gold configuration on a PI high-molecular polymer substrate. Importantly, the property of the PI high-molecular polymer surface can change after oxygen plasma etching to form a plurality of C-O-adsorption sites, metal atoms moving under voltage scanning can be adsorbed by the PI high-molecular polymer surface to form a C-O-Au complex, and finally self-healing can occur through scanning of a nano fracture junction for a period of time. Compared with a traditional technology for self-healing of a metal structure through electromigration, the method can reduce the driving voltage of the self-healing phenomenon to about 1.2 V.

The application discloses a method for regulating surface texture of a flexible substrate based on oxygen plasma etching. The method comprises the following steps: providing a flexible substrate; and etching the flexible substrate provided with a metal mask by using an oxygen plasma etching technology, wherein the metal mask is arranged directly above the surface of the flexible substrate, so that the surface texture of the flexible substrate is regulated, and a flexible substrate with micro-nano structures is prepared. By precisely controlling the surface texture, the flexible substrate surface can be gradually changed from a hydrophobic state (>120 DEG) to a super-hydrophilic state (<5 DEG), and the prepared flexible substrate with micro-nano structures can realize a tensile property of more than 150%. Meanwhile, the method has the advantages of obtaining a regular and controllable surface nano texture without affecting the intrinsic performance of the flexible substrate, and the wetting state of the flexible substrate surface can be regulated, and the preparation method is simple, so that the method is expected to be applied to the field of flexible wearable electronic devices.

The application discloses a method for removing photoresist, which is formed in the process of manufacturing a shielding structure tip array field emission electron source, and the shielding structure of the shielding structure tip array field emission electron source is a multi-insulation layer sandwich structure of SiO2 / Si3N4 / SiO2. The method mainly comprises the following steps: step one, soaking the substrate with photoresist in a photoresist removing solution; step two, megasonic cleaning; and step three, oxygen plasma etching treatment. Based on the unique insulation layer structure of the shielding structure tip array field emission electron source, the cavity must be manufactured by relying on long-time dry etching, which not only causes carbonization of the photoresist, but also increases the adhesion and hardness of the photoresist on the edge of the gate hole. The traditional photoresist removing process cannot successfully remove the firm and carbonized photoresist. The application adopts different photoresist removing methods for different regions of the photoresist, effectively solves the problem, and also ensures the completeness and integrity of the lower layer material of the photoresist.

The invention provides an oxygen-enriched three-phase photocatalyst based on a super-hydrophobic carbon nitride grid and a preparation method and application thereof.The method comprises the steps that porous carbon fiber felt is subjected to multi-stage ultrasonic cleaning to prepare a porous carbon fiber felt substrate, and the carbon nitride grid is prepared through a pyrolysis method; a nitrogen vacancy modified carbon nitride grid is prepared by argon oxygen plasma etching, the gradient grafting donor-acceptor composite material is prepared by combining gas-phase contact modification with liquid-phase photoinduced assembly and gradient thermocompression bonding, a gas-liquid-solid three-phase interface oxygen mass transfer channel is cooperatively constructed, and oxygen-enriched photocatalysis is realized. The gradient grafting donor-acceptor composite material is prepared by combining gas-phase contact modification with liquid-phase photoinduced assembly and a gradient thermocompression bonding process, a firm chemical bonding interface is constructed on the surface of a carbon nitride grid, and the bonding strength of a modification layer and a substrate material is remarkably enhanced; the problem that in the prior art, a modification layer is prone to falling off due to the fact that only physical adsorption or weak chemical action is relied on is solved.

The application belongs to the technical field of electrohydrodynamic jet printing, and discloses a high-profile insulating substrate single-electrode high-resolution electrohydrodynamic jet printing method, a high-resolution functional pattern and application of the high-resolution functional pattern. The method comprises the following steps: S1, cleaning an insulating substrate, and then placing the insulating substrate in an oxygen plasma etching machine to perform surface hydroxylation; S2, preparing a metal oxide nanolayer on the surface of the hydroxylated insulating substrate; and S3, printing a high-resolution functional pattern on the surface of the insulating substrate covered with the metal oxide nanolayer by using an electrohydrodynamic jet printing technology. The application can solve the problem of instability of an electrohydrodynamic jet on a high-insulation non-planar substrate, and realize jet printing preparation of a functional pattern on a planar or curved insulating substrate.

The application discloses a preparation process of a bamboo fiber-based light-conversion light-suppression weed-degradation mulching film, and belongs to the technical field of agricultural environmental protection materials. The mulching film adopts a double-layered structure, wherein an upper layer is a spectrum-selective light-conversion light-suppression layer, and a lower layer is a water-retention controllable degradation layer. The bamboo fiber is subjected to composite treatment of alkali activation and oxygen plasma etching, a light-triggered Schiff base crosslinking system and a benzoxazine-titanium dioxide hybrid light conversion body are introduced, and the film is prepared through a layered flow casting-in-situ ultraviolet light crosslinking composite process. The application realizes the physical weed suppression and light-conversion light-promotion synergy without herbicides, the mulching film can be fully degraded in soil, the mechanical properties and degradation period of the film are adapted to the use requirements of crops in the field, and the problems of white pollution of traditional mulching films, dependence on chemical agents for weed suppression and single function are solved.

The invention discloses a high-conductivity oxygen-etched graphene copper composite material and a preparation method thereof, relating to the technical field of composite material preparation. The invention aims to solve the problem that the bonding between the copper layer and the graphene layer is poor, the interlayer spacing is large, the interlayer electron transmission effect is poor, and the further improvement of the conductivity of the graphene copper composite material is hindered. The invention specifically includes the following steps S1: preparing a graphene copper foil; S2: using a plasma etching technology to perform oxygen plasma etching on the graphene layers on both sides of the graphene copper foil; S3: stacking two or more layers of oxygen-etched graphene copper foil obtained in step S2 in a layered manner, and aligning the back surface of the upper oxygen-etched graphene copper foil with the front surface of the lower oxygen-etched graphene copper foil to obtain a multilayer oxygen-etched graphene copper foil material; S4: vacuum hot pressing the multilayer oxygen-etched graphene copper foil material to obtain an oxygen-etched graphene copper composite material.

The application belongs to the technical field of semiconductor optoelectronic devices and micro-nano processing, and particularly relates to an axial micro-column array heterojunction photodetector chip and a preparation method thereof. The specific method is as follows: on a substrate with a bottom electrode, a perovskite layer and an organic semiconductor layer are formed by spin coating and heat treatment in sequence; a sacrificial layer and a UV glue layer are spin coated on the organic semiconductor layer in sequence; the UV glue layer is imprinted by using a PDMS elastic template with a micro-hole array, the template is removed after ultraviolet exposure and curing, and a UV glue micro-column array is obtained; a UV glue micro-hole array mask is formed by oxygen plasma etching, and the pattern is transferred to the sacrificial layer; a metal layer is evaporated, and a metal dot array mask is formed on the surface of the organic semiconductor layer by a stripping process; the metal dot array mask is used as an etching mask, two-step ICP reactive ion etching is carried out by using different etching gases, the organic semiconductor layer and the perovskite layer are etched in sequence, and the bottom electrode is exposed, so that an axial micro-column array heterojunction is finally formed.

A method for treating paper substrates to impart double-sided properties using plasma-enhanced chemical vapor deposition (PECVD) and plasma etching. The method involves receiving a paper substrate and performing a PECVD treatment on one side with a coating of hexamethyldisiloxane or ganoin under atmospheric pressure. The opposite side undergoes an oxygen plasma etching treatment. This dual treatment results in the paper substrate having a hydrophobic coating on one side and enhanced biodegradability on the other. The resulting biomaterial offers an environmentally sustainable packaging solution by combining moisture resistance and degradability within a single substrate. Classes: B65D and C08J

The invention discloses a long-life spatial mechanism lubricating film with a reservoir structure and a preparation method of the long-life spatial mechanism lubricating film, and belongs to the technical field of surface treatment. The long-life space lubrication film with the reservoir structure comprises a magnetron sputtering Ti base layer, a magnetron sputtering composite plasma-assisted chemical vapor deposition Ti-DLC gradient layer, a plasma-assisted chemical vapor deposition undoped hydrogen-containing DLC functional layer, an oxygen plasma etching micro-pattern layer and a magnetron sputtering Ti / MoS2 layer which are sequentially designed on the surface of a substrate. The long-life space lubrication film with the reservoir structure has high hardness and space environment lubrication performance, and the DLC serving as a bottom functional layer of a whole film system can remarkably improve the bearing capacity and wear resistance of the film in a heavy load environment. The micro-pattern of a reservoir with proper density and shape is etched on the DLC film, so that the macro-mechanical property of the DLC film is not damaged, and the micro-pattern can be used as a storage of the MoS2 lubricating film.

The present invention discloses a highly weather-resistant capacitor and its potting process. The capacitor comprises a core and a shell, the shell being filled with a filler that surrounds the core. The filler comprises epoxy resin layers located at the bottom and opening of the shell, respectively. A polyurethane layer is located between the two epoxy resin layers, and the polyurethane layer is evenly distributed within the polyurethane layer. This method utilizes a comprehensive encapsulation process, including pre-coating an epoxy resin interface layer, polyurethane filling, mixing with the flaky inorganic filler, and oxygen plasma etching, to improve the capacitor's overall permeability and reduce water absorption, thereby enhancing its weather resistance.

The invention belongs to the technical field of semiconductor optoelectronic devices and micro-nano machining, and particularly relates to an axial micro-column array heterojunction photoelectric detector chip and a preparation method thereof. The method specifically comprises the following steps: sequentially spin-coating and carrying out heat treatment on a substrate with a bottom electrode to form a perovskite layer and an organic semiconductor layer; sequentially spin-coating a sacrificial layer and a UV adhesive layer on the organic semiconductor layer; coining the UV adhesive layer by using a PDMS elastic template with a micropore array, and removing the template after ultraviolet exposure and curing to obtain a UV adhesive microcolumn array; forming a UV adhesive micropore array mask through oxygen plasma etching, and transferring a pattern to the sacrificial layer; forming a metal dot matrix mask on the surface of the organic semiconductor layer through a stripping process after the metal layer is evaporated; and taking the metal dot matrix mask as an etching mask, carrying out two-step ICP reactive ion etching by adopting different etching gases, etching the organic semiconductor layer and the perovskite layer in sequence until the bottom electrode is exposed, and finally forming the axial micro-column array heterojunction.