Method for preparing loosened polyimide infrared absorption film

A technology of polyimide and infrared absorption, which is applied in gaseous chemical plating, manufacturing microstructure devices, and techniques for producing decorative surface effects. It can solve problems such as poor mechanical strength, difficulty in patterning, and high thermal mass. Achieve easy patterning, strong adhesion, and low thermal mass

Inactive Publication Date: 2012-07-04
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

The film is characterized by a high absorption rate of infrared radiation energy, which can reach more than 90%, but its shortcomings are also very obvious, such as

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  • Method for preparing loosened polyimide infrared absorption film
  • Method for preparing loosened polyimide infrared absorption film

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Embodiment Construction

[0028] In order to further illustrate content of the present invention, the present invention is described in detail below, wherein:

[0029] 1. Stir and mix photosensitive polyimide resin with aluminum powder with a diameter of 3-4 microns, so that the aluminum powder particles are evenly distributed in the resin to form a resin mixture, and the mass mixing ratio of the two is 1:2;

[0030] 2. The resin mixture is evenly coated on the surface of the silicon substrate by means of spin coating on the glue leveler. Control the rotation speed of the rotating disk of the homogenizer to make the thickness of the resin mixture about 5 microns; the silicon substrate coated with the resin mixture is pre-baked on a hot plate, the baking temperature is 120 ° C, and the baking time is 3 minutes;

[0031] 3. Expose the silicon substrate coated with the resin mixture, and lithographically engrave a pattern of the same size as the pixel on the surface of the uncooled detector pixel; after t...

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Abstract

The invention discloses a method for preparing loosened polyimide infrared absorption film, which includes steps that: a piece of polyimide film is prepared by coating photosensitive polyimide resin on the surface of a substrate in rotating mode and then performing imine processing; imine processing leads the polyimide film to be well adhered to the substrate; photo-etching and developing processes are adopted to lead the polyimide film to form on surfaces of image elements; loosening is conducted, and the polyimide film is corroded to remove aluminum powder particles mixed in the polyimide film; and the thickness of polyimide film can be controlled with an oxygen plasma etching method, thermal mass can be reduced, and simultaneously surfaces of the aluminum powder particles can be ensured to be partially or totally exposed so that the aluminum powder particles can be totally removed. The loosened polyimide infrared absorption film prepared with the method overcomes defects that black gold absorption film is poor in mechanical strength, not apt to form images and high in thermal mass, improves infrared absorption efficiency compared with thin metal absorption film, is favorable for improving performance of non-refrigerating detectors, and has practical application value.

Description

technical field [0001] The invention relates to the preparation technology of a micro-mechanical structure device, in particular to the preparation of an infrared absorption film in a non-cooling heat detector. Background technique [0002] In an uncooled infrared detector, a layer of infrared absorption film is usually deposited on the surface of the pixel, which can increase the infrared radiation absorption rate of the pixel, thereby improving the device responsivity. At present, there are mainly two preparation methods for infrared absorbing films used in uncooled infrared detectors. One is to use the sputtering method to deposit a layer of Ni, Ni / Cr alloy, Ti and other metals with a thickness of only a few to a dozen nanometers on the surface of the pixel. Through process control, the sheet resistance is in the range of several hundred ohms. The energy absorption of infrared radiation is realized by the mechanism of free electron resonance absorption. The method has t...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 翟厚明马斌程正喜张学敏
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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