67 results about "Titanium thin film" patented technology

The invention discloses a method for preparing a titanium nitride film with high density and low resistivity through magnetron sputtering. A semiconductor wafer is adopted as a substrate, and the substrate is conveyed into a magnetron sputtering reaction chamber with an ultrahigh vacuum background through an ultrahigh vacuum interconnection pipeline; a titanium nitride compound is adopted as a target material, and argon is introduced for non-chemical reaction magnetron sputtering after a sample table reaches the required film deposition temperature; after sputtering is completed, gas introduction is stopped, and the molecular pump recovers the vacuum degree in the cavity to ultrahigh vacuum as soon as possible; cooling the heating table to room temperature and then taking out the sample; the low-resistance titanium nitride thin film is finally prepared by adopting specially selected parameters such as sputtering power, substrate temperature, target-substrate distance and sputtering air pressure, and after technological parameters are stabilized, the thickness of the thin film is controlled by controlling sputtering time; the method is high in feasibility, the ultrathin conductive film with low resistivity, good uniformity and surface flatness can be prepared, and the method has wide and important application prospects.

The invention relates to a titanium carbide thin film material, a preparation method and a zinc ion hybrid capacitor, and the preparation method of the titanium carbide thin film material comprises the following steps: mixing titanium carbide nanosheets with an aqueous solution of ammonium salt, carrying out ultrasonic treatment, carrying out solid-liquid separation, and taking the supernatant liquid to obtain an intercalated titanium carbide nano colloid; adding a water-soluble salt into the intercalated titanium carbide nano colloid, reacting, carrying out solid-liquid separation, washing with water, and drying to obtain titanium carbide aerogel; and carrying out compression molding on the titanium carbide aerogel to obtain the titanium carbide film material. The super-wrinkled titanium carbide film prepared through a nanosheet distortion strategy has obviously improved compression resistance. Under the pressure of 1MPa, the microstructure of the electrode material does not change. In addition, the titanium carbide thin film material has lower tortuosity and can be directly used for constructing an electrode, ion transmission can be accelerated, the dynamic performance of the electrode is remarkably improved, and the requirement for high-quality load application is met.

The invention discloses a growth method, device, equipment and medium of a titanium nitride film, and relates to the technical field of semiconductor film preparation, the growth method of the titanium nitride film comprises the following steps: under a vacuum condition, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating mode, the deposition cycle of a single titanium nitride film is completed on the surface of the glass substrate in the atomic layer deposition reaction chamber; after each deposition cycle, taking the average value of the thickness values of the plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown in the deposition cycle; and according to the difference value between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle, dynamically adjusting the deposition cycle times until the thickness of the titanium nitride film reaches the target total thickness. The method is beneficial to improving the deposition rate of the titanium nitride film and improving the uniformity of the film.

The invention discloses a film platinum resistor temperature sensor, which comprises an aluminum oxide insulating substrate, a titanium film, a platinum film resistor layer, a protective layer, a platinum metal lead and encapsulating slurry, the titanium thin film is deposited on the surface of the aluminum oxide insulating substrate, the platinum thin film resistance layer is deposited on the surface of the titanium thin film, the protection layer is deposited on the surface of the platinum thin film resistance layer, the platinum metal lead is welded on a bonding pad on the platinum thin film resistance layer, and the packaging slurry is coated on the protection layer and the platinum thin film resistance layer. According to the invention, the platinum film temperature sensor with high precision, good consistency, wide temperature measurement range and strong stability is obtained through arrangement and allocation of a multi-layer structure.

The invention provides a titanium nitride film growth method and a growth machine, and the growth method comprises the steps: S1, depositing a titanium nitride film with a set thickness H0 on the surface of a wafer, and then carrying out the impurity removal and repair; s2, the step S1 is repeated until the deposition thickness of the titanium nitride thin film is the thickness H; h is greater than H0. According to the invention, the grown titanium nitride film has fewer impurities, and the bulk resistance is reduced.

The invention discloses a preparation method of a ferroelectric memory based on a Ti / AlScN / Cu stacked structure, and the method comprises the steps: sequentially depositing titanium, aluminum scandium-doped nitride and a copper material to form a Ti / AlScN / Cu multi-layer stacked structure, and improving the switching speed, storage density and durability of the memory through the excellent interface characteristics of the structure and the electrical properties of the material; the method comprises the following specific steps: firstly depositing a layer of titanium film on a substrate, then depositing an aluminum-doped scandium nitride film on the titanium film through a magnetron sputtering method, and finally depositing copper as an electrode material; by optimizing the deposition process parameters and the interlayer thickness, efficient preparation of the ferroelectric memory can be achieved, meanwhile, the switching performance, the low-power-consumption characteristic and the long-period stability of the ferroelectric memory are effectively improved, and the method has the advantages of being simple, easy to implement, high in expandability and the like and is suitable for industrial production of the high-performance ferroelectric memory.

Disclosed in the present invention are a low-dielectric-absorption, low-mismatch, precision, linear MIM capacitor and integration technology. The integration technology comprises the integration steps of: 1) forming an active region and an isolation field oxide region; 2) forming a thick gate oxide layer and a thin gate oxide layer; 3) depositing a polysilicon layer and constructing a polysilicon gate of an MOS transistor; 4) completing photolithography and implantation of a source and a drain for a multi-gate oxide high-low voltage BiCMOS / CMOS; 5) improving the flatness of the lower surface region of a metal thin film resistor by means of chemical mechanical planarization; 6) sputtering a high-resistivity microcrystalline titanium thin film on a lower electrode of a metal MIM capacitor by means of a PVD method; 7) depositing a silicon nitride SixNyHz as a dielectric layer of the metal MIM capacitor by means of PECVD; 8) sputtering the high-resistivity microcrystalline titanium thin film on an upper electrode of the metal MIM capacitor by means of a PVD method; and 9) sputtering an aluminum-copper film layer and completing etching processing of a metal connection line. The present invention optimizes the problem of precision matching of metal MIM capacitors, improves the packaging function density and the device density of integrated circuits, and promotes the miniaturization and reduced form of high-performance integrated circuits.

The invention discloses a titanium nitride film atomic layer deposition method and atomic layer deposition equipment, and relates to the technical field of semiconductors. The method for depositing the titanium nitride thin film on the atomic layer comprises the steps that S100, a semiconductor substrate is placed in a reaction cavity of atomic layer deposition equipment; s200, the temperature of the reaction cavity is increased to a preset temperature, and the pressure of the reaction cavity is adjusted to a preset pressure; s300, C8H24N4Ti serving as a precursor source is conveyed into the reaction cavity, Ti (N (CH3) 2) x is generated on the surface of the semiconductor substrate, and x is larger than or equal to 1 and smaller than or equal to 2; s400, nitrogen plasma is provided to serve as active nitrogen free radicals to be conveyed into the reaction cavity, the active nitrogen free radicals react with Ti (N (CH3) 2) x, TiNy is generated on the surface of the semiconductor substrate through deposition, and y is larger than or equal to 0.75 and smaller than or equal to 0.85; and S500, hydrogen plasma serves as a reducing agent to be conveyed into the reaction cavity, TiNy is subjected to a reduction reaction through the hydrogen plasma, and the TiN film is deposited and generated on the surface of the semiconductor substrate. Compared with the prior art, C8H24N4Ti serves as a precursor source, the problem of Cl residue is solved, and the electrical property of the TiN film is improved.

Examples are disclosed that relate to etching titanium-containing films using a cyclic process. One example provides a method of etching a titanium-containing film. The method comprises placing a substrate comprising the titanium-containing film in a process chamber. The method further comprises performing a plurality of etching cycles. Each etching cycle of the plurality of etching cycles comprises a first stage and a second stage. The first stage comprises exposing the titanium-containing film to a BCl3-containing plasma for a first period of time. The second stage comprises exposing the titanium-containing film to a Cl2-containing plasma for a second period of time.

The invention provides a photosensitive polyimide composite titanium film and a preparation method and application thereof. The photosensitive polyimide composite titanium film comprises a photosensitive polyimide base film, a transition bonding layer and a titanium layer, wherein the transition bonding layer and the titanium layer are sequentially stacked on the surface of the photosensitive polyimide base film; the surface of one side, close to the transition bonding layer, of the photosensitive polyimide base film contains a polar functional group. Through the synergistic effect of chemical anchoring of the polar functional group and molecular bridging of the transition bonding layer, the problems that the binding force between photosensitive polyimide and titanium is weak and the photosensitive polyimide is easy to strip are fundamentally solved, and the aspects of binding force, thermal stability, environmental tolerance and the like of the photosensitive polyimide composite titanium film are obviously improved.

The application discloses a transparent conductive oxide film for a heterojunction cell and a preparation method thereof. The transparent conductive oxide film substrate is sequentially provided with an intrinsic amorphous silicon film and a doped amorphous silicon film and is stably formed into a uniform pyramid structure with a size of 1-2 microns on the surface of a silicon wafer. A buffer layer is grown on the surface of the doped amorphous silicon, and the buffer layer is located between an indium titanium oxide (ITIO) film and the doped amorphous silicon. The application grows a buffer layer with a thickness less than 10 nanometers on the surface of the doped amorphous silicon. The growth process cannot physically damage the effective doping sites of the amorphous silicon. The buffer layer can block the direct bombardment of high-energy particles, protect the doped amorphous silicon film from damage, ensure the smooth progress of the deposition process, make the transparent conductive oxide film still have good conductive performance, make the transparent conductive oxide film have high light transmittance, and thus be favorable to the improvement of the efficiency of the heterojunction solar cell.

The invention discloses a preparation method of a superconducting niobium nitride thermal electronic bolometer. A silicon oxide / silicon double-layer substrate is adopted; the method comprises the following steps: growing a niobium nitride film on a silicon oxide surface of a substrate through radio frequency magnetron sputtering to serve as a buffer layer, and growing a niobium nitride film through direct current magnetron sputtering; drawing an external electrode through ultraviolet exposure of the double-layer photoresist, growing a titanium film and a gold film through magnetron sputtering, and preparing an electrode by lift-off stripping; drawing a planar helical antenna pattern through electron beam exposure, growing a titanium thin film and a gold thin film through magnetron sputtering, and preparing the antenna by utilizing lift-off stripping; defining a microbridge pattern through electron beam exposure, and transferring the microbridge pattern to the niobium nitride film through reactive ion etching; an area needing to be etched is defined on a substrate silicon surface through ultraviolet exposure, silicon is etched off through an FSE deep silicon etching machine, and a suspension bridge structure is prepared. According to the invention, the working temperature is increased to 9 K, and the sensitivity is still at a pw / Hz 1 / 2 magnitude.

The present invention discloses a high-temperature titanium alloy laser welding process, comprising the following steps: (1) forming a titanium film layer on the surface of iron powder by magnetron sputtering technology to wrap the iron powder particles, thereby obtaining Fe / Ti composite powder; (2) placing Fe / Ti composite powder in the gap between the high-temperature titanium alloy to be welded to form an intermediate layer, and ensuring a tight connection between the titanium alloy-Fe / Ti composite powder-titanium alloy; (3) performing laser welding to completely melt the intermediate layer and partially melt the titanium alloy layers on both sides to form a weld; (4) heating the weldment to 500-600°C for insulation, and then cooling. This process has a stable welding process, a high welding success rate, beautiful weld formation, a small heat-affected zone, and no cracks, pores, undercuts, or penetration defects. It improves the overall mechanical properties and meets the requirements of large-scale and integrated aircraft engines.

A titanium complex useful for producing a titanium-containing thin film under low temperature deposition conditions without using an oxidative gas is provided. A titanium complex represented by the general formula (1) (wherein each of R1 and R2 is independently a C1-6 alkyl group which may be bonded with each other to form a ring, X is CR3 or a N atom, Y is CR4 or a N atom, Z is CR5 or a N atom, each of R3, R4 and R5 is independently a hydrogen atom or a C1-6 alkyl group, and n is an integer of from 1 to 3).

The invention provides an electrode coating process optimization method and an electrode structure, a titanium layer is manufactured on a substrate, oxidation treatment is performed on the titanium layer, a titanium oxide film is formed on the titanium layer, then a gold layer is manufactured on the titanium oxide film, an electrode of a titanium structure is obtained, and finally an annealing process is performed on the electrode of the titanium structure, the titanium oxide film is used for separating the titanium layer from the gold layer and inhibiting mutual diffusion between the titanium layer and the gold layer, and the annealing process is used for completing lattice matching of the titanium layer and the gold layer, so that the adhesive force between the gold layer and the titanium layer is improved. According to the electrode coating process optimization method provided by the invention, a set of complete metal precipitation process can be saved, and the cost of a platinum layer and the process cost are saved. And moreover, the platinum layer with relatively high resistivity is reduced, so that the square resistance of the electrode structure is relatively low, and the performance is relatively excellent.

The present application relates to a method for preparing graphene titanium carbide crosslinked film material and its supercapacitor application. The film undergoes capillary shrinkage and weak interfacial interaction in the drying process, which makes the film orientation and density low, making it difficult to prepare graphene titanium carbide MXene film with high mechanical properties and high conductivity. Therefore, the present application uses the strategy of limiting a small amount of water molecules between graphene oxide and titanium carbide MXene nanosheet layers to realize the regular orientation of nanosheets. After reducing graphene oxide to graphene, the regular structure of graphene nanosheets is fixed by introducing π-π interaction between graphene layers, realizing the interfacial synergistic effect of covalent bond and π-π interaction between graphene and titanium carbide MXene. The tensile strength of the prepared graphene titanium carbide crosslinked composite film (ΠBMG) is as high as 1.63 GPa, and the conductivity is 1423 S cm ‑1 The film volume specific capacitance is as high as 1382 F cm ‑3 The volume energy density of the asymmetric supercapacitor prepared by using the film as a self-supporting negative electrode is as high as 47.62 mWh cm ‑3 .

This invention relates to the field of metal micro / nano optical device technology, and more particularly to a high-absorption ultra-wideband solar energy absorber, comprising several sets of nanocomposite structures, a titanium thin film, a one-dimensional PMMA grating structure, and a titanium substrate. The nanocomposite structures, titanium thin film, one-dimensional PMMA grating structure, and titanium substrate are arranged sequentially from top to bottom. By combining nanodisc structures and nanoelliptical disk structures, local surface plasmon resonance modes can be excited, thereby improving absorption in the short wavelength range. In addition, by introducing a one-dimensional PMMA grating structure, new and stronger local surface plasmon resonance modes can be excited at the one-dimensional PMMA grating structure, thereby improving absorption in the long wavelength range and achieving the effect of broadening the bandwidth.

The invention discloses a molybdenum disulfide-based transistor PUF preparation method, which comprises the following steps: pretreating the surface of a silicon oxide substrate, and removing natural organic matters and other impurities on the surface of the silicon oxide substrate; based on liquid-liquid interface self-assembly, molybdenum disulfide ink forms a continuous and non-uniform molybdenum disulfide film on a silicon oxide substrate; performing patterning treatment on the surface of the molybdenum disulfide film to obtain patterns of source and drain electrodes; and depositing a titanium thin film and a palladium thin film on the silicon oxide substrate covered with the molybdenum disulfide thin film, and completing patterning of a source electrode and a drain electrode to obtain the molybdenum disulfide transistor PUF array. The method is applied to the fields of information security and chip encryption, has good attack resistance and high uniqueness, and can effectively improve the security protection performance of the electronic equipment.

A kind of etching and stripping process of titanium metal connecting layer in MEMS product includes the following steps: step one, providing the composite film layer to be etched, the composite film layer includes silicon substrate, silicon nitride film layer, titanium film and aluminum film layer;Step two, photoresist is arranged on the aluminum film layer, so that the aluminum film layer of the top layer covered by photoresist and the aluminum film layer of the top layer adjacent to the aluminum film layer covered by photoresist is exposed;Step three, the composite film layer is placed in the first chamber of wet etching, and the exposed part of the aluminum film layer of the top layer is etched in the first chamber;Step four, wet stripping is used;Step five, the composite film layer completed in step four is photoresist arranged, and groove is formed;Step six, the composite film layer completed in step five is placed in the second chamber, and titanium film etching is carried out along the groove;Step seven, stripping in photoresist removal equipment;Step eight, long film is formed on the titanium film and the aluminum film layer to form silicon nitride cover layer.

The present invention provides a high-temperature and high-pressure aspiration system for preventing titanium film oxidation, which relates to the technical field of application of compact deuterium-deuterium accelerator neutron source in neutron measurement and irradiation. A high vacuum pumping unit is used to vacuum the film preparation chamber and the film aspiration chamber, so as to achieve a 10 ‑5 Pa-level high vacuum is achieved; a micron-level high-purity titanium film is then prepared in a film preparation chamber using magnetron sputtering technology. After the titanium film is prepared, a magnetic rod transmission device is used to transport the titanium film sample into a film aspiration chamber in a high vacuum environment, where it is heated and raised in the high vacuum environment. A gate valve isolation device is then used to isolate the film aspiration chamber from the film preparation chamber, and high-purity, high-pressure gas is filled into the film aspiration chamber, ultimately achieving high-temperature, high-pressure gas adsorption on the titanium film under oxidation-free conditions. This method reduces the impact of the oxide layer on the metal film surface on gas adsorption.

The present invention provides a nanostructured metal oxide material for use as a component of an electrode in a sodium-ion battery. The material comprises a nanostructured titanium oxide film on a metal foil substrate, which can be produced by depositing or forming a nanostructured titanium dioxide material on the substrate, and then, optionally, charging and discharging the material in an electrochemical cell to improve the capacity and Coulombic efficiency thereof.

The present application relates to the field of electrode foil manufacturing technology, and in particular to a Ti / Al composite electrode foil, a manufacturing method and an electrolytic capacitor. The manufacturing method of the Ti / Al composite electrode foil comprises the following steps: S1, surface pretreatment; S2, synthesis of composite material sheets; S3, plasma enhanced chemical vapor deposition of the composite material sheets; S4, immersing the pretreated aluminum foil obtained in S1 and the composite material sheet deposited with a titanium film obtained in S3 in a self-assembly agent solution with a concentration of 1-5wt%, and after immersion for 0.5-1h, drying at 80-100°C to obtain an impregnated aluminum foil and an impregnated composite material sheet; S5, composite bonding. The present application provides a Ti / Al composite electrode foil, a manufacturing method and an electrolytic capacitor to solve the problem in the related art that the titanium and aluminum interfaces in the Ti / Al composite electrode foil are poorly bonded, which affects the performance of the composite electrode foil.

The application provides a micro via array metal filter manufacturing method and a metal filter thereof. The micro via array metal filter manufacturing method comprises the following steps: manufacturing a photoetching mask; forming a titanium nitride film on one side of a silicon wafer; bonding to form a glass-titanium nitride film-silicon wafer three-layer sandwich structure; spin coating photoresist on the outer side of the silicon wafer, placing the photoetching mask to expose the photoresist, post-baking, developing, then etching the non-resin area on the silicon wafer, and removing the photoresist to obtain a micro column array silicon wafer structure; pulse electroforming, stripping the electroformed metal micro hole structure from the silicon wafer to obtain a metal filter; and removing silicon from the obtained metal filter to obtain a micro via array metal filter with a preset thickness. The application can prepare a micro via array metal filter with a depth-width ratio greater than 50:1, greatly improves the processing efficiency of the metal filter, and most importantly, ensures the uniformity and consistency of the micro vias in the metal filter, with a CV value less than 5%.

The present invention discloses a preparation method of a molybdenum disulfide-based transistor PUF, comprising the following steps: pre-treating the surface of a silicon oxide substrate to remove natural organic matters and other impurities on its surface; based on liquid-liquid interface self-assembly, forming a continuous and uneven molybdenum disulfide thin film on the silicon oxide substrate with molybdenum disulfide ink; performing patterning treatment on the surface of the molybdenum disulfide thin film to obtain the pattern of source and drain electrodes; depositing a titanium thin film and a palladium thin film on the silicon oxide substrate covered with the molybdenum disulfide thin film to complete the patterning of the source and drain electrodes, thereby obtaining a molybdenum disulfide transistor PUF array. The present invention is applied to the fields of information security and chip encryption, has good anti-attack performance and high uniqueness, and can effectively improve the security protection performance of electronic devices.

The present invention relates to a titanium nitride thin film forming method and a semiconductor device and, more specifically, to a titanium nitride thin film forming method for forming a titanium nitride thin film on a substrate and a semiconductor device. A titanium nitride thin film forming method according to an embodiment of the present invention comprises the steps of: preparing a substrate in a process space; supplying a raw material gas containing titanium onto the substrate; and supplying a reaction gas containing nitrogen gas and hydrogen gas onto the substrate, wherein the step of supplying a raw material gas and the step of supplying a reaction gas are sequentially performed, and plasma is formed in the process space when the reaction gas is supplied.

The present invention relates to a titanium carbide thin film material, a preparation method thereof, and a zinc ion hybrid capacitor. The preparation method of the titanium carbide thin film material comprises the following steps: mixing titanium carbide nanosheets and an aqueous solution of an ammonium salt, performing ultrasonic treatment, then performing solid-liquid separation, and taking the upper liquid to obtain intercalated titanium carbide nanocolloid; adding a water-soluble salt to the intercalated titanium carbide nanocolloid, performing a reaction, then performing solid-liquid separation, washing with water, and drying to obtain a titanium carbide aerogel; performing molding by pressing on the titanium carbide aerogel to obtain a titanium carbide thin film material. The super-creased titanium carbide thin film prepared by the nanosheet twisting strategy of the present invention has significantly improved compression resistance. Under a pressure of 1 MPa, the microstructure of the electrode material does not change. In addition, the titanium carbide thin film material of the present invention has a lower tortuosity. Directly using it to construct an electrode can accelerate ion transport, significantly improve the kinetic performance of the electrode, and meet the requirements of high-quality load applications.

The present invention relates to a slurry composition for polishing a metal film, and a method for polishing a metal film by using same, the slurry composition comprising: colloidal silica polishing particles; an oxidizing agent; and a titanium nitride polishing conditioner.

This invention discloses a low-dielectric-absorption, low-mismatch precision linear MIM capacitor and its integration technology. The integration steps are as follows: 1) Forming an active region and an isolation field oxide region. 2) Forming a thick gate oxide layer and a thin gate oxide layer. 3) Depositing a polysilicon layer and constructing the polysilicon gate of the MOSFET. 4) Completing photolithographic implantation of the multi-mode gate oxide high and low voltage BiCMOS / CMOS source and drain electrodes. 5) Chemical mechanical planarization to improve the flatness of the surface region under the metal thin film resistor. 6) High resistivity microcrystalline titanium thin film sputtering of the lower electrode of the metal MIM capacitor using PVD method. 7) PECVD silicon nitride Si for the dielectric layer of the metal MIM capacitor. x N y H z 8) Sputtering of high resistivity microcrystalline titanium thin film on the top electrode of the metal MIM capacitor using PVD method. 9) Sputtering of aluminum-copper film layer and completion of metal interconnect etching. This invention not only optimizes the precision matching problem of metal MIM capacitors, but also improves the packaging functional density and device density of integrated circuits, promoting the miniaturization and lightweighting of high-performance integrated circuits.

The invention provides a spider leg joint imitating pressure sensor and a preparation method thereof. The preparation method comprises the following steps: obtaining a flexible substrate, coating the surface of the flexible substrate with a mixed solution of chitosan and gelatin, and curing in a low-temperature environment to form a hydrogel damping layer; a chromium or titanium film is deposited on the polyimide base material through a sputtering technology, and a preset strain regulation and control layer is formed; depositing a metal film on the preset strain regulation and control layer through a sputtering process, and applying preset tensile strain to a composite structure from the polyimide substrate to the metal film, so that the metal film is subjected to controlled fracture, and a metal crack layer with a parallel crack structure is formed; integrating the metal crack layer with the flexible substrate coated with the hydrogel damping layer, and enabling the metal crack layer to face the hydrogel damping layer; and preparing electrode layers at two ends of the metal crack layer to obtain the pressure sensor.

The invention provides a preparation method of a titanium nitride thin film and a metal interconnection structure, and the method comprises the steps: carrying out the plasma treatment of a titanium nitride thin film layer after the titanium nitride thin film layer is formed through ALD, and enabling the plasma used in the plasma treatment to comprise ions formed by inert gas and nitrogen ions, because the inert gas does not participate in the reaction, the chemical bond of titanium nitride can be broken by utilizing the physical bombardment effect of the inert gas, and meanwhile, the provided nitrogen ion complement position is recombined with the broken chemical bond to form a new titanium nitride chemical bond, and the process is equivalent to scattering the original titanium nitride crystal lattice through the ions formed by the inert gas; according to the method, ion diffusion channels which are arranged in order originally are closed, scattered crystal lattices are filled with ionized nitrogen ions, and formed new titanium nitride crystal lattices are disordered, so that the ion diffusion difficulty is improved, namely, the blocking performance of a titanium nitride thin film layer formed by an ALD process is improved.