1 results about "Titanium thin film" patented technology

The application discloses a transparent conductive oxide film for a heterojunction cell and a preparation method thereof. The transparent conductive oxide film substrate is sequentially provided with an intrinsic amorphous silicon film and a doped amorphous silicon film and is stably formed into a uniform pyramid structure with a size of 1-2 microns on the surface of a silicon wafer. A buffer layer is grown on the surface of the doped amorphous silicon, and the buffer layer is located between an indium titanium oxide (ITIO) film and the doped amorphous silicon. The application grows a buffer layer with a thickness less than 10 nanometers on the surface of the doped amorphous silicon. The growth process cannot physically damage the effective doping sites of the amorphous silicon. The buffer layer can block the direct bombardment of high-energy particles, protect the doped amorphous silicon film from damage, ensure the smooth progress of the deposition process, make the transparent conductive oxide film still have good conductive performance, make the transparent conductive oxide film have high light transmittance, and thus be favorable to the improvement of the efficiency of the heterojunction solar cell.