19 results about "Titanium thin film" patented technology

The invention discloses a film platinum resistor temperature sensor, which comprises an aluminum oxide insulating substrate, a titanium film, a platinum film resistor layer, a protective layer, a platinum metal lead and encapsulating slurry, the titanium thin film is deposited on the surface of the aluminum oxide insulating substrate, the platinum thin film resistance layer is deposited on the surface of the titanium thin film, the protection layer is deposited on the surface of the platinum thin film resistance layer, the platinum metal lead is welded on a bonding pad on the platinum thin film resistance layer, and the packaging slurry is coated on the protection layer and the platinum thin film resistance layer. According to the invention, the platinum film temperature sensor with high precision, good consistency, wide temperature measurement range and strong stability is obtained through arrangement and allocation of a multi-layer structure.

The invention provides a titanium nitride film growth method and a growth machine, and the growth method comprises the steps: S1, depositing a titanium nitride film with a set thickness H0 on the surface of a wafer, and then carrying out the impurity removal and repair; s2, the step S1 is repeated until the deposition thickness of the titanium nitride thin film is the thickness H; h is greater than H0. According to the invention, the grown titanium nitride film has fewer impurities, and the bulk resistance is reduced.

Disclosed in the present invention are a low-dielectric-absorption, low-mismatch, precision, linear MIM capacitor and integration technology. The integration technology comprises the integration steps of: 1) forming an active region and an isolation field oxide region; 2) forming a thick gate oxide layer and a thin gate oxide layer; 3) depositing a polysilicon layer and constructing a polysilicon gate of an MOS transistor; 4) completing photolithography and implantation of a source and a drain for a multi-gate oxide high-low voltage BiCMOS / CMOS; 5) improving the flatness of the lower surface region of a metal thin film resistor by means of chemical mechanical planarization; 6) sputtering a high-resistivity microcrystalline titanium thin film on a lower electrode of a metal MIM capacitor by means of a PVD method; 7) depositing a silicon nitride SixNyHz as a dielectric layer of the metal MIM capacitor by means of PECVD; 8) sputtering the high-resistivity microcrystalline titanium thin film on an upper electrode of the metal MIM capacitor by means of a PVD method; and 9) sputtering an aluminum-copper film layer and completing etching processing of a metal connection line. The present invention optimizes the problem of precision matching of metal MIM capacitors, improves the packaging function density and the device density of integrated circuits, and promotes the miniaturization and reduced form of high-performance integrated circuits.

The invention provides a photosensitive polyimide composite titanium film and a preparation method and application thereof. The photosensitive polyimide composite titanium film comprises a photosensitive polyimide base film, a transition bonding layer and a titanium layer, wherein the transition bonding layer and the titanium layer are sequentially stacked on the surface of the photosensitive polyimide base film; the surface of one side, close to the transition bonding layer, of the photosensitive polyimide base film contains a polar functional group. Through the synergistic effect of chemical anchoring of the polar functional group and molecular bridging of the transition bonding layer, the problems that the binding force between photosensitive polyimide and titanium is weak and the photosensitive polyimide is easy to strip are fundamentally solved, and the aspects of binding force, thermal stability, environmental tolerance and the like of the photosensitive polyimide composite titanium film are obviously improved.

The application discloses a transparent conductive oxide film for a heterojunction cell and a preparation method thereof. The transparent conductive oxide film substrate is sequentially provided with an intrinsic amorphous silicon film and a doped amorphous silicon film and is stably formed into a uniform pyramid structure with a size of 1-2 microns on the surface of a silicon wafer. A buffer layer is grown on the surface of the doped amorphous silicon, and the buffer layer is located between an indium titanium oxide (ITIO) film and the doped amorphous silicon. The application grows a buffer layer with a thickness less than 10 nanometers on the surface of the doped amorphous silicon. The growth process cannot physically damage the effective doping sites of the amorphous silicon. The buffer layer can block the direct bombardment of high-energy particles, protect the doped amorphous silicon film from damage, ensure the smooth progress of the deposition process, make the transparent conductive oxide film still have good conductive performance, make the transparent conductive oxide film have high light transmittance, and thus be favorable to the improvement of the efficiency of the heterojunction solar cell.

The present application relates to a method for preparing graphene titanium carbide crosslinked film material and its supercapacitor application. The film undergoes capillary shrinkage and weak interfacial interaction in the drying process, which makes the film orientation and density low, making it difficult to prepare graphene titanium carbide MXene film with high mechanical properties and high conductivity. Therefore, the present application uses the strategy of limiting a small amount of water molecules between graphene oxide and titanium carbide MXene nanosheet layers to realize the regular orientation of nanosheets. After reducing graphene oxide to graphene, the regular structure of graphene nanosheets is fixed by introducing π-π interaction between graphene layers, realizing the interfacial synergistic effect of covalent bond and π-π interaction between graphene and titanium carbide MXene. The tensile strength of the prepared graphene titanium carbide crosslinked composite film (ΠBMG) is as high as 1.63 GPa, and the conductivity is 1423 S cm ‑1 The film volume specific capacitance is as high as 1382 F cm ‑3 The volume energy density of the asymmetric supercapacitor prepared by using the film as a self-supporting negative electrode is as high as 47.62 mWh cm ‑3 .

This invention relates to the field of metal micro / nano optical device technology, and more particularly to a high-absorption ultra-wideband solar energy absorber, comprising several sets of nanocomposite structures, a titanium thin film, a one-dimensional PMMA grating structure, and a titanium substrate. The nanocomposite structures, titanium thin film, one-dimensional PMMA grating structure, and titanium substrate are arranged sequentially from top to bottom. By combining nanodisc structures and nanoelliptical disk structures, local surface plasmon resonance modes can be excited, thereby improving absorption in the short wavelength range. In addition, by introducing a one-dimensional PMMA grating structure, new and stronger local surface plasmon resonance modes can be excited at the one-dimensional PMMA grating structure, thereby improving absorption in the long wavelength range and achieving the effect of broadening the bandwidth.

The application provides a micro via array metal filter manufacturing method and a metal filter thereof. The micro via array metal filter manufacturing method comprises the following steps: manufacturing a photoetching mask; forming a titanium nitride film on one side of a silicon wafer; bonding to form a glass-titanium nitride film-silicon wafer three-layer sandwich structure; spin coating photoresist on the outer side of the silicon wafer, placing the photoetching mask to expose the photoresist, post-baking, developing, then etching the non-resin area on the silicon wafer, and removing the photoresist to obtain a micro column array silicon wafer structure; pulse electroforming, stripping the electroformed metal micro hole structure from the silicon wafer to obtain a metal filter; and removing silicon from the obtained metal filter to obtain a micro via array metal filter with a preset thickness. The application can prepare a micro via array metal filter with a depth-width ratio greater than 50:1, greatly improves the processing efficiency of the metal filter, and most importantly, ensures the uniformity and consistency of the micro vias in the metal filter, with a CV value less than 5%.

The present invention relates to a slurry composition for polishing a metal film, and a method for polishing a metal film by using same, the slurry composition comprising: colloidal silica polishing particles; an oxidizing agent; and a titanium nitride polishing conditioner.

This invention discloses a low-dielectric-absorption, low-mismatch precision linear MIM capacitor and its integration technology. The integration steps are as follows: 1) Forming an active region and an isolation field oxide region. 2) Forming a thick gate oxide layer and a thin gate oxide layer. 3) Depositing a polysilicon layer and constructing the polysilicon gate of the MOSFET. 4) Completing photolithographic implantation of the multi-mode gate oxide high and low voltage BiCMOS / CMOS source and drain electrodes. 5) Chemical mechanical planarization to improve the flatness of the surface region under the metal thin film resistor. 6) High resistivity microcrystalline titanium thin film sputtering of the lower electrode of the metal MIM capacitor using PVD method. 7) PECVD silicon nitride Si for the dielectric layer of the metal MIM capacitor. x N y H z 8) Sputtering of high resistivity microcrystalline titanium thin film on the top electrode of the metal MIM capacitor using PVD method. 9) Sputtering of aluminum-copper film layer and completion of metal interconnect etching. This invention not only optimizes the precision matching problem of metal MIM capacitors, but also improves the packaging functional density and device density of integrated circuits, promoting the miniaturization and lightweighting of high-performance integrated circuits.

The invention provides a spider leg joint imitating pressure sensor and a preparation method thereof. The preparation method comprises the following steps: obtaining a flexible substrate, coating the surface of the flexible substrate with a mixed solution of chitosan and gelatin, and curing in a low-temperature environment to form a hydrogel damping layer; a chromium or titanium film is deposited on the polyimide base material through a sputtering technology, and a preset strain regulation and control layer is formed; depositing a metal film on the preset strain regulation and control layer through a sputtering process, and applying preset tensile strain to a composite structure from the polyimide substrate to the metal film, so that the metal film is subjected to controlled fracture, and a metal crack layer with a parallel crack structure is formed; integrating the metal crack layer with the flexible substrate coated with the hydrogel damping layer, and enabling the metal crack layer to face the hydrogel damping layer; and preparing electrode layers at two ends of the metal crack layer to obtain the pressure sensor.

This invention discloses a mechanically interlocked polymer-reinforced and toughened titanium carbide thin film material, its preparation method, and its applications, relating to the fields of synthetic chemistry and nanocomposite material preparation. By reacting mechanically interlocked molecules with a copolymer and further bridging them onto the surface of a titanium carbide thin film, the titanium carbide thin film is reinforced and toughened by utilizing the controllable intramolecular motion mechanism of the mechanically interlocked molecules, such as sliding, rotation, and translation. In particular, the prepared titanium carbide thin film exhibits excellent stretchability, especially maintaining stable conductivity even during repeated stretching, making it suitable for applications in stretchable electronics, such as flexible electronic products, wearable smart devices, and wearable rehabilitation devices.

The invention discloses a surface treatment process for a high-performance stainless steel seamless tube, and belongs to the technical field of seamless tube treatment. Comprising the following steps of pretreatment, titanium nitride film plating, silicon carbide coating growth, gradient buffer layer preparation, nano slow-release antibacterial coating coating, self-repairing coating arrangement, intelligent monitoring film deposition, anti-scaling coating growth and environment-friendly energy-saving treatment, and comprehensive improvement of performance and environmental protection is achieved through multi-technology collaborative innovation. The nanoscale titanium nitride film and the silicon carbide coating form a basic protective layer, the former prevents chloride ions from permeating, the latter enhances wear resistance, and the gradient metal ceramic buffer layer is matched to relieve thermal stress, so that the corrosion resistance and wear resistance of the pipeline under complex working conditions are jointly improved. All the effects are mutually associated and supplement each other, a closed loop is formed from multiple dimensions of protection, monitoring, repairing, energy saving and the like, the service life of the pipeline is remarkably prolonged, the maintenance cost is reduced, and the safety and sustainability of industrial production are improved.

To remove a titanium oxide film provided on the surface of a substrate.SOLUTION: A method of removing a titanium oxide film on a surface of a substrate includes supplying a mixed gas containing a hydrogen fluoride gas and an ammonia gas to a surface of the titanium oxide film to cause a chemical reaction between the titanium oxide film and the mixed gas, thereby generating a gaseous reaction product from the titanium oxide film and removing the gaseous reaction product from the surface of the substrate, and heating the substrate to remove a deposit adhering to the substrate when the reaction product is generated.SELECTED DRAWING: Figure 5

This invention discloses a method for fabricating a superconducting niobium nitride thermionic radiometric calorimeter, employing a silicon oxide / silicon bilayer substrate. A hexanitrogen-niobium-1,6-niobium thin film is grown on the silicon oxide surface of the substrate using radio frequency magnetron sputtering as a buffer layer, followed by DC magnetron sputtering to grow a niobium nitride thin film. External electrodes are patterned using ultraviolet light exposure with a double-layer photoresist, and titanium and gold thin films are grown by magnetron sputtering, followed by lift-off stripping to fabricate the electrodes. A planar helical antenna pattern is patterned using electron beam exposure, and titanium and gold thin films are grown by magnetron sputtering, followed by lift-off stripping to fabricate the antenna. A microbridge pattern is defined using electron beam exposure, and the pattern is transferred to the niobium nitride thin film using reactive ion etching. The area to be etched is defined on the silicon surface of the substrate using ultraviolet light exposure, and silicon is etched away using an FSE deep silicon etching machine to fabricate the levitation bridge structure. This invention maintains the sensitivity at pw / Hz while increasing the operating temperature to 9 K. 1 / 2 Magnitude.

A laminate (1) includes a substrate (2), a protective layer (3), and a titanium oxide film (4) in this order toward one side in the thickness direction. The titanium oxide film (4) includes crystals that show a group of Ti2O3 diffraction spots in an electron beam diffraction image observed with a transmission electron microscope, wherein a refractive index when light with a wavelength of 550 nm is incident thereon exceeds 2.50 but 2.80 or less.

The invention discloses a preparation method of a titanium nitride film and the titanium nitride film, relates to the technical field of semiconductors, and aims to solve the problem that the uniformity of a target film formed on the surface of a substrate is reduced due to lattice distortion damage to the substrate caused by bombardment of the substrate by high-energy ions in the existing PEADL technology. The preparation method of the titanium nitride film comprises the following steps: introducing a titanium source precursor into a reaction cavity where a semiconductor substrate is located, wherein the titanium source precursor is adsorbed on the semiconductor substrate to form an adsorption layer; introducing first carrier gas into the reaction cavity to purge and remove redundant titanium source precursors; exciting the reaction gas into reaction gas plasma outside the reaction cavity; introducing reaction gas plasma into the reaction cavity; the adsorption layer reacts with reaction gas plasma to generate a titanium nitride film; introducing second carrier gas into the reaction cavity to purge and remove redundant reaction gas plasma; and according to the set cycle index, titanium nitride film deposition with the preset film thickness is achieved.

The invention provides a titanium target for sputtering, a method for producing the same, and a method for producing a titanium-containing thin film. Specifically disclosed is a titanium target for sputtering, which has a recrystallized structure having an average crystal grain size of 1 [mu] m or less. In addition, the present invention also provides a method for manufacturing a titanium target for sputtering, the method comprising: a step for obtaining a processed plate by performing large strain processing on a cut titanium ingot; a step for obtaining a rolled sheet by cold-rolling the processed sheet at a rolling rate of 30% or more; and a step for heat-treating the rolled sheet at a temperature of 320 DEG C or less.

The invention discloses a titanium nitride film preparation method and a semiconductor device, and the method comprises the steps: firstly, adjusting the energy of an auxiliary ion source and the gas flow ratio of inert gas to reaction gas based on target density and target resistivity; then, inert gas is introduced into the sputtering ion source, and reaction gas is introduced into the auxiliary ion source; then, the sputtering ion source ionizes the inert gas to form a sputtering ion beam; the reaction gas is ionized by the auxiliary ion source in the ionization area to form plasma; then, the sputtering ion beam bombards the surface of the target material, and sputtering particles are generated; the plasma is pulled through a grid mesh to form a reaction ion beam; and finally, the sputtering particles and the reaction ion beams are subjected to chemical reaction in the reaction area, and the titanium nitride film is deposited on the surface of the substrate. Therefore, the titanium nitride film which is good in element distribution uniformity, low in resistivity and resistant to etching can be obtained without a high-temperature condition.