8 results about "Titanium thin film" patented technology

Disclosed in the present invention are a low-dielectric-absorption, low-mismatch, precision, linear MIM capacitor and integration technology. The integration technology comprises the integration steps of: 1) forming an active region and an isolation field oxide region; 2) forming a thick gate oxide layer and a thin gate oxide layer; 3) depositing a polysilicon layer and constructing a polysilicon gate of an MOS transistor; 4) completing photolithography and implantation of a source and a drain for a multi-gate oxide high-low voltage BiCMOS / CMOS; 5) improving the flatness of the lower surface region of a metal thin film resistor by means of chemical mechanical planarization; 6) sputtering a high-resistivity microcrystalline titanium thin film on a lower electrode of a metal MIM capacitor by means of a PVD method; 7) depositing a silicon nitride SixNyHz as a dielectric layer of the metal MIM capacitor by means of PECVD; 8) sputtering the high-resistivity microcrystalline titanium thin film on an upper electrode of the metal MIM capacitor by means of a PVD method; and 9) sputtering an aluminum-copper film layer and completing etching processing of a metal connection line. The present invention optimizes the problem of precision matching of metal MIM capacitors, improves the packaging function density and the device density of integrated circuits, and promotes the miniaturization and reduced form of high-performance integrated circuits.

The application discloses a transparent conductive oxide film for a heterojunction cell and a preparation method thereof. The transparent conductive oxide film substrate is sequentially provided with an intrinsic amorphous silicon film and a doped amorphous silicon film and is stably formed into a uniform pyramid structure with a size of 1-2 microns on the surface of a silicon wafer. A buffer layer is grown on the surface of the doped amorphous silicon, and the buffer layer is located between an indium titanium oxide (ITIO) film and the doped amorphous silicon. The application grows a buffer layer with a thickness less than 10 nanometers on the surface of the doped amorphous silicon. The growth process cannot physically damage the effective doping sites of the amorphous silicon. The buffer layer can block the direct bombardment of high-energy particles, protect the doped amorphous silicon film from damage, ensure the smooth progress of the deposition process, make the transparent conductive oxide film still have good conductive performance, make the transparent conductive oxide film have high light transmittance, and thus be favorable to the improvement of the efficiency of the heterojunction solar cell.

This invention relates to the field of metal micro / nano optical device technology, and more particularly to a high-absorption ultra-wideband solar energy absorber, comprising several sets of nanocomposite structures, a titanium thin film, a one-dimensional PMMA grating structure, and a titanium substrate. The nanocomposite structures, titanium thin film, one-dimensional PMMA grating structure, and titanium substrate are arranged sequentially from top to bottom. By combining nanodisc structures and nanoelliptical disk structures, local surface plasmon resonance modes can be excited, thereby improving absorption in the short wavelength range. In addition, by introducing a one-dimensional PMMA grating structure, new and stronger local surface plasmon resonance modes can be excited at the one-dimensional PMMA grating structure, thereby improving absorption in the long wavelength range and achieving the effect of broadening the bandwidth.

The present invention relates to a slurry composition for polishing a metal film, and a method for polishing a metal film by using same, the slurry composition comprising: colloidal silica polishing particles; an oxidizing agent; and a titanium nitride polishing conditioner.

The invention provides a spider leg joint imitating pressure sensor and a preparation method thereof. The preparation method comprises the following steps: obtaining a flexible substrate, coating the surface of the flexible substrate with a mixed solution of chitosan and gelatin, and curing in a low-temperature environment to form a hydrogel damping layer; a chromium or titanium film is deposited on the polyimide base material through a sputtering technology, and a preset strain regulation and control layer is formed; depositing a metal film on the preset strain regulation and control layer through a sputtering process, and applying preset tensile strain to a composite structure from the polyimide substrate to the metal film, so that the metal film is subjected to controlled fracture, and a metal crack layer with a parallel crack structure is formed; integrating the metal crack layer with the flexible substrate coated with the hydrogel damping layer, and enabling the metal crack layer to face the hydrogel damping layer; and preparing electrode layers at two ends of the metal crack layer to obtain the pressure sensor.

This invention discloses a mechanically interlocked polymer-reinforced and toughened titanium carbide thin film material, its preparation method, and its applications, relating to the fields of synthetic chemistry and nanocomposite material preparation. By reacting mechanically interlocked molecules with a copolymer and further bridging them onto the surface of a titanium carbide thin film, the titanium carbide thin film is reinforced and toughened by utilizing the controllable intramolecular motion mechanism of the mechanically interlocked molecules, such as sliding, rotation, and translation. In particular, the prepared titanium carbide thin film exhibits excellent stretchability, especially maintaining stable conductivity even during repeated stretching, making it suitable for applications in stretchable electronics, such as flexible electronic products, wearable smart devices, and wearable rehabilitation devices.

A laminate (1) includes a substrate (2), a protective layer (3), and a titanium oxide film (4) in this order toward one side in the thickness direction. The titanium oxide film (4) includes crystals that show a group of Ti2O3 diffraction spots in an electron beam diffraction image observed with a transmission electron microscope, wherein a refractive index when light with a wavelength of 550 nm is incident thereon exceeds 2.50 but 2.80 or less.

The invention provides a titanium target for sputtering, a method for producing the same, and a method for producing a titanium-containing thin film. Specifically disclosed is a titanium target for sputtering, which has a recrystallized structure having an average crystal grain size of 1 [mu] m or less. In addition, the present invention also provides a method for manufacturing a titanium target for sputtering, the method comprising: a step for obtaining a processed plate by performing large strain processing on a cut titanium ingot; a step for obtaining a rolled sheet by cold-rolling the processed sheet at a rolling rate of 30% or more; and a step for heat-treating the rolled sheet at a temperature of 320 DEG C or less.