Ferroelectric memory

A ferroelectric memory and ferroelectric thin film technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of poor leakage current characteristics, large leakage current, high memory cost basis, and achieve excellent fatigue characteristics, read and write speed. Fast, easy-to-break effect

Active Publication Date: 2014-04-30
江苏巨邦环境工程集团股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As the main storage medium of ferroelectric memory, PZT ferroelectric capacitor has a large fatigue rate and poor leakage current characteristics. Due to the poor crystallization properties of ferroelectric thin films prepared on metal Pt, the performance of PZT ferroelectric capacitors is poor. , large leakage current
At the same time, the current ferroelectric memory also has many disadvantages
The cost basis of the memory is very high, the reading and writing life is not long enough, and it is easy to be damaged.

Method used

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Embodiment Construction

[0020] In order to make those skilled in the art understand the technical solution of the present invention more clearly, the specific implementation manner thereof will be described below in conjunction with the accompanying drawings.

[0021] The ferroelectric thin film capacitance of ferroelectric memory, silicon base layer 1, it also comprises upper electrode layer 2, upper electrode buffer layer 3, ferroelectric thin film layer 4, lower electrode buffer layer 5, lower electrode layer 6, bonding layer 7 and barrier layer8.

[0022] The present invention mixes organic materials into lead-zirconium-titanium (PZT) materials, and the illustrated structure of the invention is a cross-sectional view of a ferroelectric film capacitance structure of a general ferroelectric memory.

[0023] The multi-substituent silacyclohexadiene is doped into the lead-zirconium-titanium thin film layer to form the ferroelectric thin film layer 4 as the multi-substituent silacyclohexadiene.

[00...

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Abstract

The invention discloses a ferroelectric thin-film capacitor of a ferroelectric memory. The ferroelectric thin-film capacitor comprises a substrate layer 1, an upper electrode layer 2, an upper electrode buffer layer 3, a ferroelectric thin-film layer 4, a lower electrode buffer layer 5, a lower electrode layer 6, a bonding layer 7 and a barrier layer 8, wherein multi-substituent silicon heterocyclic diallyl is doped into a lead-zirconium-titanium thin-film layer to form the ferroelectric thin-film layer 4.

Description

technical field [0001] The invention relates to a ferroelectric film capacitor used for a ferroelectric memory, and belongs to the technical field of ferroelectric film. Background technique [0002] Semiconductor-based non-volatile memory is useful in data storage and as a replacement for rotating disk memory. Memory based on flash EEPROM cells has found increasing use in computers and consumer devices such as cameras, mp3 players and PDAs. The cost of flash EEPROM memory has dropped to the point that this memory is being used in computers as a replacement for disk drives. Semiconductor disk drives are particularly attractive for laptop computers because semiconductor disk drives require significantly lower power, are shock resistant, and are typically faster than conventional disk drives utilized in laptop computer systems. [0003] Ferroelectric memory is a non-volatile memory with a special process. It uses artificially synthesized lead-zirconium-titanium PZT material ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30
CPCH10K85/111H10K10/20
Inventor 常琦
Owner 江苏巨邦环境工程集团股份有限公司
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