In-plane reading/writing operation ferroelectric memristor and fabrication method thereof

A memristor and write operation technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of rare physical realization, and achieve the effects of good data retention characteristics, improved storage density, and simple structure

Active Publication Date: 2017-09-01
FUDAN UNIV
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  • In-plane reading/writing operation ferroelectric memristor and fabrication method thereof
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  • In-plane reading/writing operation ferroelectric memristor and fabrication method thereof

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[0047] The following introduces some of the possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, but are not intended to identify key or decisive elements of the present invention or limit the scope of protection.

[0048] In the drawings, for the sake of clarity, the thicknesses of layers and regions are exaggerated, and the dimensional proportional relationship among the various parts in the illustration does not reflect the actual dimensional proportional relationship.

[0049] In the following embodiments, for clarity of description, the domain direction or polarization direction is exemplarily given, but it should be understood that the domain direction or polarization direction of the ferroelectric memristor is not limited to those shown in the accompanying drawings. Examples show directions.

[0050] figure 1 Shown is a schematic diagram of a three-dimensional structure of a ferroelectric memristor...

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Abstract

The invention belongs to the technical field of ferroelectric storage, and particularly relates to an in-plane reading/writing non-volatile ferroelectric memristor and a fabrication method and operation method thereof. The ferroelectric memristor comprises a ferroelectric thin film layer and reading/writing electrode pairs, wherein the reading/writing electrode pairs are arranged on a surface of the ferroelectric thin film layer, a gap between the reading/writing electrode pairs is an irregular pattern, the polarization direction of an electric domain of the ferroelectric thin film layer is not parallel to a normal direction of a reading/writing electrode plane, and different information can be stored with change of different writing voltages during writing voltage operation of a certain bias direction on the reading/writing electrode pairs. By the ferroelectric memristor, non-destructive reading in a current mode can be achieved with continuous change of the reading voltage, the ferroelectric memristor is suitable for high-density application, and moreover, the ferroelectric memristor is simple to fabricate and is low in cost.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, and in particular relates to a non-volatile ferroelectric memristor operated in a plane (or called a transverse direction) and a preparation method thereof, in particular to a gap between adjacent electrodes in a plane of Ferroelectric memristor with irregular pattern and its preparation method and operation method. Background technique [0002] At present, most of the commercial electronic device memories on the market are based on binary storage logic information ("0" or "1"). With the continuous advancement of Moore's Law, the size of the storage unit of the memory is getting smaller and the storage density is getting higher and higher. , The power consumption is getting lower and lower, but when the storage medium is close to the physical limit size, the memory is facing many insurmountable problems, such as serious leakage, failure of stored information, etc., which seriously h...

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Application Information

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IPC IPC(8): H01L27/11507
CPCH10B53/30
Inventor 江安全张岩白子龙
Owner FUDAN UNIV
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