Magnesium oxide titanium high dielectric constant thin film and preparation method and application thereof

A technology of high dielectric constant and magnesium oxide, which is applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., can solve problems such as unsuitable dielectric layer materials, not involving optical and electrical properties of thin films, high dielectric constant, etc. Achieve the effect of excellent dielectric constant

Inactive Publication Date: 2014-01-01
FUDAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Titanium dioxide is not suitable as a dielectric material because of its narrow bandgap (3.0 - 3.2 eV), although it has a very high dielectric constant
[0006] In 2007, Giovanni et al. reported magnesium oxide titanium thin films prepared by Metal Organic Chemical Vapor Deposition (MOCVD), but did not involve the optical and electrical properties of the thin films

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  • Magnesium oxide titanium high dielectric constant thin film and preparation method and application thereof
  • Magnesium oxide titanium high dielectric constant thin film and preparation method and application thereof
  • Magnesium oxide titanium high dielectric constant thin film and preparation method and application thereof

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Embodiment Construction

[0028] The present invention is further specifically described below by examples.

[0029] 1. a kind of preparation method of magnesium oxide titanium film, concrete steps are as follows:

[0030] (1) Preparation of magnesium-titanium precursor solution

[0031] Using ethylene glycol monomethyl ether as solvent, magnesium ethoxide Mg(OC 2 h 5 ) 2 Dissolved therein, after stirring for 1 hour to form a clear solution, tetrabutyl titanate Ti(C 4 h 9 O) 4 Dissolve in it, stir for 0.2 hours to a clear solution, then add concentrated hydrochloric acid with a concentration of 38% to it, and shake vigorously, after stirring for 4 hours, let it stand for 48 hours to form a sol, and use a filter screen with a pore size of 0.22 microns before use The solution was filtered. The volume ratio of ethylene glycol monomethyl ether to concentrated hydrochloric acid is 9:1, the molar ratio of Mg ions and Ti ions in the solution is 1.0:0-0.4:0.6, and the molar concentration of Mg ions is 0...

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Abstract

The invention belongs to the technical field of oxide dielectric layer thin films, and particularly provides a magnesium oxide titanium high dielectric constant thin film and a preparation method and application of the magnesium oxide titanium high dielectric constant thin film. According to the magnesium oxide titanium high dielectric constant thin film, ethylene glycol monomethyl ether is used as a solvent, concentrated hydrochloric acid is used as a stabilizer, and Mg (OC2H5) 2 and Ti (C4H9O) 4 are dissolved in the solvent to form a clear and stable precursor solution; a glass substrate is coated by the precursor solution in a spinning mode and subjected to preheating and follow-up high-temperature heat treatment to obtain a magnesium oxide titanium thin film. The invention further relates to a thin film transistor which adopts the magnesium oxide titanium thin film as a gate dielectric layer. According to an IZO thin film transistor which adopts the magnesium oxide titanium thin film as a gate dielectric layer material, the switching current ratio is 6*106, the saturation migration rate is 3.4cm2/Vs, and the sub-threshold swing is 0.32V/dec.

Description

technical field [0001] The invention belongs to the technical field of oxide dielectric layer thin films, and in particular relates to a magnesium oxide titanium high dielectric constant thin film and a preparation method thereof, and the application of the magnesium oxide titanium as a gate dielectric material in thin film transistors. Background technique [0002] A thin film transistor (Thin Film Transistor: TFT) is a field effect transistor (Field Effect Transistor: FET), which consists of a semiconductor active layer, namely the channel layer, a dielectric layer, namely the insulating layer, a gate electrode, a source electrode and a drain electrode. As an electronic switch, it is widely used in liquid crystal display devices (Liquid Crystal Displays: LCD) and active matrix organic light emitting diode displays (Active Matrix Organic Light Emitting Diode: AMOLED). Thin-film transistor technology has become a symbolic technology of flat-panel display (FPD), and the curre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/288H01L29/51H01L29/786
CPCH01L29/517H01L29/401H01L29/786
Inventor 浦海峰张群
Owner FUDAN UNIV
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