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A method for preparing nitrogen-containing titanium dioxide film by magnetron sputtering

A technology of titanium dioxide and magnetron sputtering, which is applied in chemical instruments and methods, sputtering coating, catalyst activation/preparation, etc., can solve the problems of high cost and complex process, and achieve low cost, simple and controllable process, crystal even particle effect

Active Publication Date: 2018-10-30
太湖县市场监督检验所(太湖县功能膜检测研究院)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the current preparation methods are complex and costly

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1: The method for preparing a nitrogen-containing titanium dioxide film by magnetron sputtering method uses metal titanium as a target material to prepare a nitrogen-doped titanium dioxide film by magnetron sputtering method, and the diameter of the target material is 10 cm; including the following steps,

[0022] (1) Preparation of the substrate: Quartz glass is cut into squares with a size of 20×20mm;

[0023] (2) Cleaning of the substrate: In order to remove the organic matter on the surface of the substrate, first use a mixed solution of hydrogen peroxide and concentrated sulfuric acid (volume ratio of 3:1) to soak and ultrasonically clean for 15 minutes, and then clean it with deionized water; put the substrate in acetone successively solution, ethanol solution, and deionized water for 15 minutes to increase the surface activity of the substrate, thereby increasing the bonding force between the film and the substrate material; after cleaning, place the su...

Embodiment 2

[0032] Embodiment 2: The method for preparing a nitrogen-containing titanium dioxide film by magnetron sputtering method uses titanium dioxide as a target material to prepare a nitrogen-doped titanium dioxide film by magnetron sputtering, comprising the following steps,

[0033] (1) Preparation of substrate: cut ordinary glass into squares with a size of 20×20mm;

[0034] (2) Cleaning of the substrate: In order to remove the organic matter on the surface of the substrate, first use a mixed solution of hydrogen peroxide and concentrated sulfuric acid (volume ratio of 4:1) to soak and ultrasonically clean for 20 minutes, and then clean it with deionized water; put the substrate in acetone successively solution, ethanol solution, and deionized water for 15 minutes to increase the surface activity of the substrate, thereby increasing the bonding force between the film and the substrate material; after cleaning, place the substrate in an oven to dry for use;

[0035] (3) Preparatio...

Embodiment 3

[0043] Embodiment three: the method for preparing a nitrogen-containing titanium dioxide film by magnetron sputtering, using titanium dioxide as a target material to prepare a nitrogen-doped titanium dioxide film by magnetron sputtering, comprising the following steps,

[0044] (1) Preparation of the substrate: cutting the ceramic into squares with a size of 20×20mm;

[0045] (2) Cleaning of the substrate: In order to remove the organic matter on the surface of the substrate, first use a mixed solution of hydrogen peroxide and concentrated sulfuric acid (volume ratio of 4:1) to soak and ultrasonically clean for 20 minutes, and then clean it with deionized water; put the substrate in acetone successively solution, ethanol solution, and deionized water for 15 minutes to increase the surface activity of the substrate, thereby increasing the bonding force between the film and the substrate material; after cleaning, place the substrate in an oven to dry for use;

[0046] (3) Prepar...

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Abstract

The invention relates to a method for preparing a nitrogen-contained titanium dioxide film by using a magnetron sputtering method. A nitrogen-doped titanium dioxide film is prepared by using titanium dioxide as a target through the magnetron sputtering method according to the steps of: (1) preparation of a substrate; (2) cleaning of the substrate; (3) preparation of a metal titanium film; and (4) preparation of the nitrogen-doped titanium dioxide film. The metal titanium film is firstly prepared through using the magnetron sputtering method; and then, the annealing is performed in an annealing furnace with nitrogen and oxygen to obtain the nitrogen-doped titanium dioxide film. The preparation method is simple and controllable in process and low in cost, and facilitates large-scale industrial popularization and application.

Description

technical field [0001] The invention relates to a new energy-saving technology and the field of chemical environmental protection, in particular to a method for preparing a nitrogen-containing titanium dioxide film by using a magnetron sputtering method. Background technique [0002] Semiconductor photocatalytic materials have broad application prospects in solving energy and environmental problems. Semiconductor nano-titanium dioxide has become an ideal material for solving energy and environmental problems because of its stable chemical properties, non-toxicity and effective removal of pollutants in the atmosphere and water. However, titanium dioxide has a large forbidden band width (Eg=3.2eV), and photocatalytic reactions can only occur under ultraviolet light with a wavelength less than 387nm, which means that titanium dioxide can only use a small amount of sunlight (about 5%), However, visible light (about 45%) which accounts for the majority in sunlight cannot be util...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/58C23C14/02B01J27/24B01J21/06B01J35/06B01J37/34
CPCB01J21/063B01J27/24B01J35/004B01J35/065B01J37/343B01J37/344C23C14/021C23C14/185C23C14/35C23C14/5853
Inventor 刘玉洁
Owner 太湖县市场监督检验所(太湖县功能膜检测研究院)
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