Titanium aluminum oxide thin film and preparation method and application thereof

A technology of titanium thin film and aluminum oxide, which is applied in the field of aluminum oxide titanium thin film and its preparation, can solve the problems of high operating cost and unsuitable gate dielectric layer materials, etc.

Inactive Publication Date: 2013-09-04
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to its narrow bandgap (3.0--3.2 eV), titanium dioxide is not suitable as a gate dielectric material although it has a very high dielectric constant.
High

Method used

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  • Titanium aluminum oxide thin film and preparation method and application thereof
  • Titanium aluminum oxide thin film and preparation method and application thereof
  • Titanium aluminum oxide thin film and preparation method and application thereof

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Embodiment Construction

[0027] The present invention is further specifically described below by way of examples.

[0028] A kind of preparation of aluminum oxide titanium film, concrete steps are as follows:

[0029] (1) Preparation of Al-Ti precursor solution

[0030] With ethylene glycol monomethyl ether as solvent, aluminum sec-butoxide Al(C 4 h 9 O) 3 Dissolved therein, after stirring for 0.5 hours to form a clear solution, tetrabutyl titanate Ti(C 4 h 9 O) 4 Dissolve in it, stir for 0.2 hours to a clear solution, then add concentrated hydrochloric acid with a concentration of 38% to it, shake vigorously, stir for 4 hours, then let it stand for 48 hours to form a gel. Wherein the volume ratio of ethylene glycol monomethyl ether and concentrated hydrochloric acid is 10:1, the molar ratio of Al ion and Ti ion in the solution is 1.0:0-0.2:0.8, and the molar concentration of Al ion is 0.6M.

[0031] (2) Preparation of aluminum oxide titanium film

[0032] Spin-coat the aluminum-titanium precu...

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Abstract

The invention belongs to the technical field of preparation of transistors, and in particular relates to a titanium aluminum oxide thin film and a preparation method and application thereof. The aluminum oxide titanium thin film is prepared by a sol-gel method. The method comprises the following steps of: with ethylene glycol monomethyl ether as a solvent and concentrated hydrochloric acid as an additive, dissolving Al(C4H9O)3 and Ti(C4H9O)4 in the solvent to form a clear and stable precursor solution; and spirally coating the precursor solution on a glass substrate, and obtaining the aluminum oxide titanium thin film after thermal pretreatment and subsequent high-temperature heat treatment. The invention further relates to a preparation method of a thin film transistor by using titanium aluminum oxide as a gate dielectric layer. According to the IZO thin film transistor with the titanium aluminum oxide as the gate dielectric layer, the switching current ratio is greater than 1*10<6>, the saturation migration rate is greater than 1.1cm<2>/Vs, and the subthreshold amplitude is less than 1.5V/dec.

Description

technical field [0001] The invention belongs to the technical field of transistor preparation, and in particular relates to an aluminum oxide titanium film, a preparation method and application thereof. Background technique [0002] A thin film transistor (Thin Film Transistor: TFT) is a field effect transistor (Field Effect Transistor: FET), which consists of a semiconductor active layer, namely the channel layer, a dielectric layer, namely the insulating layer, a gate electrode, a source electrode and a drain electrode. Field-effect transistors are widely used in various electronic circuits due to their small size, light weight, long life, and low power consumption. In recent years, with the development of flat panel display technology, liquid crystal displays (Liquid Crystal Displays: LCD) and active matrix organic light emitting diode displays (Active Matrix / Organic Light Emitting Diode: AMOLED) driven by TFT have become the pillars of the display field . The thin film...

Claims

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Application Information

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IPC IPC(8): C01F7/02C03C17/23
Inventor 浦海峰张群
Owner FUDAN UNIV
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