Preparation method of zinc oxide doped titanium oxide film for photocatalysis

A technology of titanium oxide film and zinc oxide, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of hindered light penetration, low quantum efficiency, and loss of activity

Inactive Publication Date: 2013-10-23
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The initial research mainly focused on powder, but powder has its unavoidable shortcomings, such as easy condensation in water, loss of activity, and hindered light penetration, difficult to separate and recycle, and not suitable for continuous fluid systems, so thin films The photocatalysis research has attracted the attention of scientists from all over the world
[0003] However, a single TiO 2 Thin films have shortcomings such as narrow light absorption wavelength range, low utilization rate, high carrier rate, and low quantum efficiency. Using semiconductor thin films can further improve the efficiency of TiO2. 2 photocatalytic activity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Use a vacuum pump to evacuate the reaction chamber to a low vacuum below 20hPa and heat it to a specific reaction temperature, and then clean the reaction chamber with high-purity nitrogen with a purity of 5N. Clean the glass substrate ultrasonically in high-purity deionized water for 10-30 minutes, dry it with a high-purity nitrogen gun, and put it into the reaction chamber until the temperature of the reaction chamber reaches 100 degrees Celsius. The precursor tetra(dimethylamino)titanium is passed into the reaction chamber, the pulse time is 3s, and the pulse time for cleaning tetrakis(dimethylamino)titanium is 8s; then a 4s water vapor pulse is introduced, and then the excess is cleaned with a 10s pulse time. of water vapor. So far, one cycle of deposition of the titanium oxide film is completed, with a thickness of about 0.1 nm. After 100 such cycles, the precursor diethyl zinc with a pulse time of 2 s is introduced to make it chemically saturated and adsorbed on ...

Embodiment 2

[0018] Use a vacuum pump to evacuate the reaction chamber to a low vacuum below 20hPa and heat it to a specific reaction temperature, and then clean the reaction chamber with high-purity nitrogen with a purity of 5N. Clean the glass substrate ultrasonically in high-purity deionized water for 10-30 minutes, dry it with a high-purity nitrogen gun, and put it into the reaction chamber until the temperature of the reaction chamber reaches 150 degrees Celsius. The precursor tetra(dimethylamino)titanium is passed into the reaction chamber, the pulse time is 3s, and the pulse time for cleaning tetrakis(dimethylamino)titanium is 8s; then a 4s water vapor pulse is introduced, and then the excess is cleaned with a 10s pulse time. of water vapor. So far, one cycle of deposition of the titanium oxide film is completed, with a thickness of about 0.08 nm. After 63 such cycles, the precursor diethyl zinc with a pulse time of 2 s was introduced to make it chemically saturated and adsorbed on...

Embodiment 3

[0020] Use a vacuum pump to evacuate the reaction chamber to a low vacuum below 20hPa and heat it to a specific reaction temperature, and then clean the reaction chamber with high-purity nitrogen with a purity of 5N. Clean the glass substrate ultrasonically in high-purity deionized water for 10-30 minutes, dry it with a high-purity nitrogen gun, and put it into the reaction chamber until the temperature of the reaction chamber reaches 200 degrees Celsius. The precursor tetra(dimethylamino)titanium is passed into the reaction chamber, the pulse time is 3s, and the pulse time for cleaning tetrakis(dimethylamino)titanium is 8s; then a 4s water vapor pulse is introduced, and then the excess is cleaned with a 10s pulse time. of water vapor. So far, one cycle of deposition of the titanium oxide film is completed, with a thickness of about 0.06 nm. After 42 such cycles, the precursor diethyl zinc with a pulse time of 2 s was introduced to make it chemically saturated and adsorbed on...

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PUM

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Abstract

The invention provides a preparation method of a zinc oxide doped titanium oxide film for photocatalysis. The preparation method comprises the following steps of: heating to 100-200 DEG C in the rough vacuum of below 20PMa, and cleaning a reaction cavity; cleaning a substrate, drying the substrate, introducing a precursor tetrakis (dimethylamino)titanium to the reaction cavity to pulse for 3 seconds, and cleaning; pulsing steam, and cleaning the steam to finish one cycle of titanium oxide deposition; introducing a precursor diethyl zinc to pulse for 2 seconds, and cleaning; introducing the steam to pulse for 4 seconds, and cleaning to finish one cycle of zinc oxide deposition; and forming a large cycle by a plurality of cycles of the titanium oxide deposition and one cycle of the zinc oxide deposition, and annealing at the temperature of 450 DEG C for 2 hours after a plurality of large cycles are finished, i.e., the zinc oxide doped titanium oxide film deposition process is finished. The film is precise and adjustable in thickness and component and excellent in optical transmittance and photocatalysis efficiency.

Description

technical field [0001] The invention relates to a method for preparing a photocatalytic thin film, in particular to a method for photocatalytic zinc oxide doped titanium oxide thin film. Background technique [0002] Industrialization promotes the rapid development of the global economy, but environmental problems caused by various industrial pollutions have become one of the focus issues in the world today. In order to deal with harmful substances produced in industrial production, various biological, chemical, physical and other methods have been developed accordingly. However, most methods have disadvantages such as long period, large investment, and insufficient degradation. Photocatalysis is a new subject gradually developed in the 20th century. It refers to the conversion of light energy into chemical energy by semiconductor materials under the irradiation of light, which promotes the synthesis or degradation of compounds. Therefore, the photocatalytic technology of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40
Inventor 姜来新尹桂林何丹农
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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