Graphite surface titanium metallization method and product manufactured with the same

A technology of titanium metal and graphite, which is applied in the field of titanium metallization on the surface of graphite and its preparation products, can solve the problems of difficult connection, large difference in expansion coefficient, elastic modulus, and low bonding strength of the titanium metallized layer and film base. Achieve the effect of easy quality control and good process repeatability

Inactive Publication Date: 2015-06-10
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the invention of the present invention is: when graphite is connected with metal Cu and Cu alloy, graphite is difficult to be wetted by liquid metal, and the expansion coefficient, elastic modulus difference of both is big, the problem of connection difficulty, provides a kind of graphite surface titanium Metallization method and products prepared therefrom
The invention can effectively solve the problem of low film-base bonding strength of the surface titanium metallization layer in the diffusion bonding process of non-metallic graphite, and can prepare metal titanium films with high film-base bonding strength on the graphite substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The graphite substrate workpiece after vacuum degassing treatment is placed in the magnetron sputtering chamber, and 99.9wt% pure titanium is used as the target material. The process conditions for depositing titanium are: target distance 25mm, deposition time 40min, sputtering power 100W , bias voltage 50V, vacuum degree 0.5Pa. After the magnetron sputtering is completed, a layer of titanium film is formed on the surface of the graphite substrate.

[0026] Then place the graphite matrix workpiece with the titanium film deposited in the hot isostatic pressing equipment for processing, that is, place the graphite matrix workpiece coated with the titanium film in the hot isostatic pressing equipment for heating and pressurization. The treatment process is as follows: the working temperature is 900°C, the working pressure is 40MPa, and the holding time is 5min. After the hot isostatic pressing is completed, cool to room temperature, take out the workpiece, and form a laye...

Embodiment 2

[0028] The graphite substrate is placed in a sintering furnace for vacuum degassing treatment, the sintering temperature is 1400°C, and the vacuum degree is 1×10 -3 Pa, keep warm for 2 hours, cool to room temperature, then ultrasonically clean with distilled water, dehydrate with acetone and blow dry.

[0029] Then place the graphite substrate workpiece after vacuum degassing treatment in the magnetron sputtering chamber, use 99.9% pure titanium as the target material, and the process conditions for depositing titanium are: target distance 35mm, deposition time 60min, sputtering power 120W , bias voltage 100V, vacuum degree 1Pa. After the magnetron sputtering is completed, a layer of titanium film is formed on the surface of the graphite substrate.

[0030] Then place the graphite substrate workpiece with the titanium film deposited in the hot isostatic pressing equipment for processing, that is, place the graphite workpiece coated with the titanium film in the hot isostatic ...

Embodiment 3

[0032] The graphite substrate workpiece after vacuum degassing treatment is placed in the magnetron sputtering chamber, and 99.9% pure titanium is used as the target material. The process conditions for depositing titanium are: target distance 40mm, deposition time 100min, sputtering power 150W, Bias voltage 150V, vacuum degree 1.5Pa. After the magnetron sputtering is completed, a layer of titanium film is formed on the surface of the graphite substrate.

[0033] Then place the graphite substrate workpiece with the titanium film deposited in the hot isostatic pressing equipment for processing, that is, place the graphite workpiece coated with the titanium film in the hot isostatic pressing equipment for heating and pressurization. The treatment process is as follows: the working temperature is 1000°C, the working pressure is 200MPa, and the holding time is 30min. After the hot isostatic pressing is completed, cool to room temperature, take out the workpiece, and form a layer ...

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PUM

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Abstract

The invention discloses a graphite surface titanium metallization method and a product manufactured with the same to solve the problem that when graphite is connected with Cu or Cu alloy, it is difficult to wet graphite with liquid metal, the difference between graphite and Cu or Cu alloy is large in terms of expansion factor and elasticity modulus, and connection is hard. According to the method, a titanium film is deposited on the surface of a graphite substrate with the magnetron sputtering method, and then hot isostatic pressing is conducted on the deposited titanium film, so that a titanium thin film is formed on the surface of the graphite substrate. The problem that coating-substrate combination strength of a surface titanium metallization layer is low during diffusion bonding of the non-metal material graphite can be effectively solved, and the metal titanium thin film high in coating-substrate combination strength can be prepared on the graphite substrate. According to the titanium thin film, the concentration of titanium becomes larger gradually from the graphite substrate to the outside in a gradient mode, and the strength of combination between a titanium coating and the substrate is high. The method can meet the requirement for research of fusion reactor plasma facing materials and has great significance for development of fusion reactor elements.

Description

technical field [0001] The invention relates to the field of materials, in particular to the technical field of material surface coatings, in particular to a titanium metallization method on the surface of graphite and a product prepared therefrom. The invention can prepare a titanium film with high film-base bonding strength on the graphite substrate, and has good application prospect. Background technique [0002] Graphite has the advantages of high melting point (3400°C), low density and excellent thermal shock resistance, so it is widely used in energy, aerospace, electronics and other fields. Especially under high temperature conditions, such as plasma-facing components in thermonuclear fusion devices, graphite has better applications. The thermal conductivity of graphite is low (generally around 100W / m·K). When it is used as the bombardment surface of high-temperature heat flow plasma facing the plasma element, in the thermonuclear fusion device, the temperature of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/58
Inventor 李启寿李强程亮王伟陈林杨勇龙亮
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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