Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor

A titanium tetraiodide and atomic layer deposition technology, which is used in gaseous chemical plating, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc. Impurities, etc.

Active Publication Date: 2016-03-09
LAM RES CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Increased aspect ratio can lead to incomplete step coverage of feature surfaces, resulting in poor barrier performance of semiconductor devic

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  • Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
  • Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
  • Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor

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Embodiment Construction

[0017] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. However, the disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention. While the invention will be described in conjunction with specific detailed embodiments, it should be understood that these specific detailed embodiments are not intended to limit the scope of the disclosed embodiments.

[0018] Depositing pure, thin, conformal titanium films is critical for semiconductor device fabrication. Titanium and titanium compound films are used as barrier layers in both front-end-of-line (FEOL) and back-end-of-line (BEOL) metallization. Specifically, titanium films are used as barriers in contacts such as tungsten or copper contacts. Typically, barrier layers ...

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Abstract

Provided are a method and apparatus to deposit a pure titanium thin film at low temperature using a titanium tetraiodide precursor. Methods of depositing highly conformal and pure titanium films at low temperatures are provided. Methods involve exposing a substrate to titanium tetraiodide, purging the chamber, exposing the substrate to a plasma, purging the chamber, and repeating these operations. Titanium films are deposited at low temperatures less than about 450 DEG C.

Description

technical field [0001] The invention generally relates to the field of semiconductor processing, and more specifically relates to a method and a device for depositing a pure titanium film at low temperature using a titanium tetraiodide precursor. Background technique [0002] Semiconductor manufacturing processes often involve the deposition of titanium or titanium-containing compounds. Typically, titanium thin films have been deposited by physical vapor deposition sputtering methods. With the shrinking of semiconductor devices and smaller technology nodes, shrinking feature sizes make the deposition of highly conformal and pure titanium films more challenging. The increased aspect ratio can lead to incomplete step coverage of the feature surface, resulting in poor barrier performance of the semiconductor device. Other methods used to deposit titanium films have impurities in the titanium film due to the precursors used, or cause thermal budget issues. Contents of the in...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01J37/32
CPCH01J37/32082H01L21/02697C23C16/14C23C16/34C23C16/4485C23C16/45542C23C16/45553H01L21/28518H01L21/28562H01L23/485H01L23/53266H01L21/76843H01L21/76855C23C16/505H01L21/321H01L21/32051H01L21/32053
Inventor 思鲁提·维韦克·托姆贝尔伊斯达克·卡里姆桑杰·戈皮纳特丹耐克·迈克尔
Owner LAM RES CORP
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