Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
A titanium tetraiodide and atomic layer deposition technology, which is used in gaseous chemical plating, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc. Impurities, etc.
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[0017] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. However, the disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention. While the invention will be described in conjunction with specific detailed embodiments, it should be understood that these specific detailed embodiments are not intended to limit the scope of the disclosed embodiments.
[0018] Depositing pure, thin, conformal titanium films is critical for semiconductor device fabrication. Titanium and titanium compound films are used as barrier layers in both front-end-of-line (FEOL) and back-end-of-line (BEOL) metallization. Specifically, titanium films are used as barriers in contacts such as tungsten or copper contacts. Typically, barrier layers ...
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