Preparation method of titanium oxide film memristor

A titanium oxide film and memristor technology, which is applied in the field of titanium oxide film memristor preparation, can solve the problems of slow read and write speed, difficulty in increasing integration, difficulty in adapting to electronic information technology, etc., and achieves stable high and low resistance states, low stress effect

Inactive Publication Date: 2020-04-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

Traditional non-volatile memory has high programming voltage, slow reading and writing speed, and difficulty in continuously improving the integration level, making it difficult to adapt to the development of electronic information technology

Method used

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  • Preparation method of titanium oxide film memristor
  • Preparation method of titanium oxide film memristor
  • Preparation method of titanium oxide film memristor

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Embodiment 1

[0023] Figure 1 to Figure 5 It is a method for preparing a titanium oxide thin film memristor of the present invention, and a structure diagram of the device during the preparation process. Figure 4 It is a three-dimensional structure diagram of a titanium oxide thin film memristor of the present invention, which is a substrate, an insulating layer, a bottom electrode, a resistive layer material and a top electrode in order from bottom to top. The substrate is monocrystalline silicon, the bottom electrode is titanium, the insulating layer is silicon nitride, the resistive material is titanium oxide, and the top electrode is platinum.

[0024] Combine now Figure 1 to Figure 5 , the preparation method of titanium oxide thin film memristor is further described in detail.

[0025] (a) Cleaning the silicon wafer, placing the silicon wafer in a solution of H2O:HF=5:1 to remove the natural oxide layer, and then placing the silicon wafer in acetone, absolute ethanol and deionized...

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Abstract

The invention relates to a preparation method of a titanium oxide film memristor, and belongs to the field of non-volatile memories. The memristor is characterized by sequentially comprising a siliconsubstrate, an insulating layer, a bottom electrode, a resistive layer and a top electrode from bottom to top. The resistive layer is made of a titanium oxide film, the bottom electrode is made of titanium, and the top electrode is made of platinum. The prepared titanium oxide film can make the switching of the device higher, the high and low resistance states more stable, and the stress between the films is reduced. The method can be practically applied to a future novel non-volatile memory device.

Description

technical field [0001] The invention belongs to the field of non-volatile memory, and in particular relates to a method for preparing a titanium oxide thin film memristor. Background technique [0002] With the rapid development of information technologies such as the Internet of Things, cloud computing and blockchain, today's data storage technology is facing higher and higher requirements. The traditional non-volatile memory has high programming voltage, slow reading and writing speed, and difficulty in increasing integration, making it difficult to adapt to the development of electronic information technology. As a new type of non-volatile memory in recent years, memristor has the advantages of high storage density, small size, low power consumption, non-volatile storage, and fast read and write speed. It has unique advantages in data storage. [0003] The memristor is controlled by an external electric field to control the material properties of the resistive switching ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/8833H10N70/011
Inventor 周梨钟志亲王姝娅
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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