Preparation of silver nanometer electrodes

Abstract

The method includes following steps: (1) preparation of self-assembly substrate, offering a P type Si(100) substrate that is treated by ultrasonic in organic solvent; after treated by placing into Piranha solution, and it is dried by blowing non-oxidizability gas, and then is treated by OTS solution and is cleaned up by using organic solvent; (2) nano-line etching, the nano-line is etched on self assembly substrate by using current of conduct atomic force microscope, the radius of curvature of pinpoint is less than 50 nm; (3) nanometer generating, the etched substrate is placed in the silver acetate for dipping, and then is taken out to place in ethanol in short time, and then is placed in sodium borohydride aqueous solution for dipping, washing, and then is dried by blowing non-oxidizbility gas, finally the silver enhancement solution is inputted for heighten the electrode line.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, in particular to a preparation method of a silver nanometer electrode. Background technique [0002] With the miniaturization and complexity of electronic components, it is becoming more and more important to prepare nano-electrodes with small size and good conductivity. Especially for detection electrodes for sensors, to improve the sensitivity, it is necessary to use smaller and neat interdigitated electrodes. At present, methods for preparing small-sized electrodes include photolithography, electron beam etching, and microcontact printing. Photolithography is limited by the wavelength of light, and the etched electrodes are on the order of microns. Even if deep ultraviolet light is used, the limit width is also 100. above nanometers. In the recently developed X-ray etching, the width of the etched electrode is greatly reduced, but the production of the mask is too difficult, and ...

AI Technical Summary

Problems solved by technology

The recently developed X-ray etching has greatly reduced the width of the etched electrode, but the production of the mask is too difficult, and the mask is easily deformed during the production process, and it only stays in the laboratory test stage.

Although electron beam etching can obtain smaller electrodes, this method requires expensive equipment (more than 2 million US dollars), and it needs to be coated with an electron beam mask on the substrate, and then exposed under a high-energy electron beam in a vacuum. Multiple processes such as metal sputtering and mask stripping

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