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Preparation method of high temperature superconducting thin film

A high-temperature superconducting thin film, single crystal thin film technology, applied in chemical instruments and methods, from chemical reactive gases, single crystal growth, etc. Research and other issues to achieve the effect of reducing electron scattering, small lattice mismatch, and maintaining superconducting properties

Active Publication Date: 2016-04-27
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In addition, in the prior art, sintering method is generally used to prepare high-temperature superconducting materials, however, bulk materials prepared by sintering method have many defects and impurities
At present, iron-based high-temperature superconducting thin films can be prepared by pulsed laser deposition (PLD), but there are also disadvantages such as poor structural uniformity of the thin film, and many defects and impurities.
That is, it is difficult to obtain high-quality iron-based single crystal thin films with existing preparation techniques, which interferes with the research on the mechanism of superconductivity

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  • Preparation method of high temperature superconducting thin film

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Embodiment Construction

[0024] The high-temperature superconducting thin film provided by the present invention and its preparation method will be further described in detail below with reference to the accompanying drawings and specific examples.

[0025] See figure 1 , the embodiment of the present invention provides an iron-based high-temperature superconducting film 10, the iron-based high-temperature superconducting film 10 includes a strontium titanate (SrTiO 3 ) substrate 16 , an iron selenium (FeSe) single crystal layer 14 , and a protective layer 12 . The SrTiO 3 The substrate 16, the FeSe single crystal layer 14 and the protective layer 12 are sequentially stacked, wherein the FeSe single crystal layer 14 is located on the SrTiO 3 between the substrate 16 and the protective layer 12 . The SrTiO 3 The substrate 16 , the FeSe single crystal layer 14 and the protective layer 12 are all stacked by epitaxial growth. The FeSe single crystal layer 14 and the SrTiO 3 There is an atomic level ...

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Abstract

The invention relates to a preparation method of a high-temperature superconducting thin film. The method specifically comprises steps as follows: providing an SrTiO3 substrate and placing the SrTiO3 substrate in a super-high vacuum system, growing an FeSe monocrystal layer on the surface of the SrTiO3 substrate by adopting a molecular beam epitaxy growing technology, and growing a protective layer with a layered crystal structure by adopting the molecular beam epitaxy growing technology and covering the surface of the FeSe monocrystal layer with the protective layer. By means of the method, the high-quality and ultrathin high-temperature superconducting thin film can be prepared, the starting temperature of superconducting transition of the thin film is above 54K, and the critical current density is higher than 106A / cm<2> when the starting temperature of superconducting transition of the thin film is 12K.

Description

technical field [0001] The invention belongs to the field of preparation of high-temperature superconductors, and in particular relates to a preparation method of an iron-based high-temperature superconductor thin film. Background technique [0002] High-temperature superconductors are a class of unconventional superconductors that cannot be explained by traditional BCS theory. In 1986, Miller and Bedernolz discovered the cuprate high-temperature superconductor for the first time. In 2008, Japanese scientists discovered iron-based high-temperature superconductors for the first time. The discovery of iron-based high-temperature superconductors provides a new system for the study of the mechanism of superconductivity, and also provides inspiration for exploring other superconducting systems. Iron-based and copper-based high-temperature superconductors have many similarities in structure: they are both layered materials, and their unit cell (UnitCell) has a sandwich structure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B25/18C30B29/46
Inventor 薛其坤马旭村王立莉陈曦贾金锋何珂季帅华张文号王庆艳李志
Owner TSINGHUA UNIV
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