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Preparation of silver nanometer electrodes

A silver nanometer and electrode technology, applied in the field of nanomaterials, can solve the problems of high price, difficult mask production, and easy deformation of the mask.

Inactive Publication Date: 2008-01-30
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The recently developed X-ray etching has greatly reduced the width of the etched electrode, but the production of the mask is too difficult, and the mask is easily deformed during the production process, and it only stays in the laboratory test stage.
Although electron beam etching can obtain smaller electrodes, this method requires expensive equipment (more than 2 million US dollars), and it needs to be coated with an electron beam mask on the substrate, and then exposed under a high-energy electron beam in a vacuum. Multiple processes such as metal sputtering and mask stripping

Method used

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Embodiment

[0011] Embodiment: a kind of preparation method of silver nano-electrode, comprises comb-shaped gold electrode etching (on the P-type Si (100) substrate, is plated the comb-shaped gold electrode of 2-20 μ m spacing by the method for photolithography), also includes ( 1) Self-assembly substrate preparation: take the above-mentioned silicon substrate that has been ultrasonically treated in an organic solvent and washed with water, put it in a Piranha solution, wash it with water and dry it with a non-oxidizing gas, then treat it with an OTS solution and wash it with an organic solvent Cleaning; (2) nanowire etching: use the conductive atomic force microscope current simultaneous measurement mode to etch nanowires on the self-assembled substrate, and the radius of curvature of the needle tip is less than 50 nanometers; (3) nanowire generation: the etched substrate Soak the tablet in silver acetate aqueous solution, take it out and soak in ethanol for a short time, then soak in sod...

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Abstract

The method includes following steps: (1) preparation of self-assembly substrate, offering a P type Si(100) substrate that is treated by ultrasonic in organic solvent; after treated by placing into Piranha solution, and it is dried by blowing non-oxidizability gas, and then is treated by OTS solution and is cleaned up by using organic solvent; (2) nano-line etching, the nano-line is etched on self assembly substrate by using current of conduct atomic force microscope, the radius of curvature of pinpoint is less than 50 nm; (3) nanometer generating, the etched substrate is placed in the silver acetate for dipping, and then is taken out to place in ethanol in short time, and then is placed in sodium borohydride aqueous solution for dipping, washing, and then is dried by blowing non-oxidizbility gas, finally the silver enhancement solution is inputted for heighten the electrode line.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, in particular to a preparation method of a silver nanometer electrode. Background technique [0002] With the miniaturization and complexity of electronic components, it is becoming more and more important to prepare nano-electrodes with small size and good conductivity. Especially for detection electrodes for sensors, to improve the sensitivity, it is necessary to use smaller and neat interdigitated electrodes. At present, methods for preparing small-sized electrodes include photolithography, electron beam etching, and microcontact printing. Photolithography is limited by the wavelength of light, and the etched electrodes are on the order of microns. Even if deep ultraviolet light is used, the limit width is also 100. above nanometers. In the recently developed X-ray etching, the width of the etched electrode is greatly reduced, but the production of the mask is too difficult, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/44H01L21/28B82B3/00
Inventor 杜祖亮张兴堂李天锋李蕴才
Owner HENAN UNIVERSITY
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