Semiconductor memory with vertical structure and manufacturing method thereof

A manufacturing method and technology of vertical structure, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of increasing channel area, unfavorable development of high integration of chips, etc., to achieve the effect of high-density storage

Inactive Publication Date: 2012-08-01
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] With the further shrinking of the size of semiconductor memory, when integrating multiple planar channel type memories, the area occupied by the channel will increase, which is not conducive to the development of chips in the direction of high integration.

Method used

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  • Semiconductor memory with vertical structure and manufacturing method thereof
  • Semiconductor memory with vertical structure and manufacturing method thereof
  • Semiconductor memory with vertical structure and manufacturing method thereof

Examples

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Embodiment Construction

[0048] Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Meanwhile, in the following description, the term substrate used can be understood to inclu...

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Abstract

The invention belongs to the technical field of semiconductor memories and in particular relates to a semiconductor memory with a vertical structure and a manufacturing method thereof. The memory provided by the invention is a vertical channel double-metal floating gate memory and comprises at least one substrate region, a drain region, a source region, two floating gate regions and a control grid, wherein the floating gate regions of the memory are used for storing electric charges. The invention also discloses a manufacturing method of the double-metal floating gate memory. The memory adopts a vertical channel structure and doest not occupy more chip area while increasing grid length so as to contribute to high-integration development of the chip; and a double-bit storage unit with small area is manufactured by the simplified method, so that more storage units can be manufactured on the silicon substrate with the same area and high-density storage can be realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a semiconductor memory and a manufacturing method thereof, in particular to a vertical channel double-metal floating gate memory and a manufacturing method thereof. Background technique [0002] Semiconductor memories are widely used in various electronic products. With the continuous development of microelectronic integrated circuit technology, the development of semiconductor memory is also very fast, its size is getting smaller and higher, and its density is getting higher and higher. In non-volatile memory, the memory adopts the technology of storing multiple bits per unit. For example, a single polysilicon floating-gate memory can use multiple layers of threshold voltages to achieve multi-bit storage. Nitride ROMs, on the other hand, use charge-trap technology to store two bits in two regions of the silicon nitride dielectric. The erasing of the n...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L21/8247H01L29/10
Inventor 王鹏飞林曦张卫
Owner FUDAN UNIV
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