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A kind of resistive memory and preparation method thereof

A resistive memory and resistive layer technology, applied in electrical components and other directions, can solve the problems of small memory storage window and inability to meet forming-free characteristics, and achieve the effects of reducing manufacturing cost, saving time, and simplifying process flow

Active Publication Date: 2021-04-02
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, most of the memories prepared by the above methods have the problems of small storage windows and inability to meet the forming-free characteristics

Method used

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  • A kind of resistive memory and preparation method thereof
  • A kind of resistive memory and preparation method thereof
  • A kind of resistive memory and preparation method thereof

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Embodiment 1

[0037] At present, the methods for optimizing device performance of resistive memory devices mainly include: designing multi-layer structures, changing material components by using different fabrication processes, and the like. Among them, in the multi-layer structure design, the overall current is usually reduced by adding a barrier layer, and the storage window of the resistive memory does not change significantly, and the operating voltage (including Set voltage and Reset voltage), forming voltage (resistive variable The voltage required for the initial opening of the memory, which is a large voltage) increases; in the use of different manufacturing methods to change the material composition, although the operating voltage and the storage window of the resistive memory do not increase significantly, it still needs to be formed. , and the process is more complicated.

[0038] Based on the existing questions above, see figure 1 , figure 1 This is a schematic flowchart of a ...

Embodiment 2

[0060] On the basis of the above Embodiment 1, please refer to Figures 2a to 2i , Figures 2a to 2i It is a schematic diagram of a manufacturing process flow of a resistive memory memory provided by an embodiment of the present invention. In this embodiment, a resistive memory in which the first electrode 3 is Pt, the second electrode 7 is Ta, and the dopant of the second resistive layer 5 is Ta is fabricated on the substrate layer 1. The specific preparation process of the resistive memory includes:

[0061] Step 1. Select the substrate layer 1.

[0062] see again Figure 2a , the substrate layer 1 selected in this embodiment is a composite substrate, and the selected substrate layer 1 is cleaned using the RCA standard cleaning process. The composite substrate includes a Si substrate layer 11 and SiO grown on the Si substrate layer 11 2 layer 12, the composite substrate may be a Si substrate layer 11 on which SiO has been grown 2 The existing composite substrate of laye...

Embodiment 3

[0085] On the basis of the second embodiment above, please refer to image 3 , image 3 It is a schematic structural diagram of a resistive memory provided by an embodiment of the present invention. This embodiment provides a resistive memory, the structure of the resistive memory includes from bottom to top: a substrate layer 1, an adhesive layer 2, a first electrode 3, a resistive layer, a second electrode 7, and a resistive layer It includes a first resistive switching layer 4 , a second resistive switching layer 5 , and a third resistive switching layer 6 in order from bottom to top. The resistive switching memory is prepared and formed by using the preparation methods described in the first and second embodiments.

[0086] The resistive memory provided in this embodiment has the technical effects described in Embodiment 1 and Embodiment 2 above, which will not be repeated here.

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Abstract

The invention discloses a resistive variable memory and a preparation method thereof. The preparation method of the resistive variable memory comprises: selecting a substrate layer; growing a first electrode on the substrate layer; growing a resistive variable layer on the first electrode ; growing several second electrodes on the resistive variable layer; etching away the resistive variable layer and the second electrodes on one side until the first electrodes leak out, so as to complete the preparation of the resistive variable memory. In the preparation of the resistive variable memory, the present invention selects an appropriate dopant for the resistive variable layer, so that the storage window of the resistive variable memory is increased, and the resistive variable memory also has a forming-free characteristic.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage devices and manufacturing, and in particular relates to a resistive memory and a preparation method thereof. Background technique [0002] With the improvement of the level of science and technology, existing memory devices can no longer meet the needs of larger-scale, smaller-sized, and lower-power electronic devices. Resistive memory is widely regarded as a strong candidate for next-generation memory due to its simple structure, good scalability, fast read and write speed, and compatibility with CMOS technology. [0003] At present, most of the research on resistive memory is focused on oxide materials, and the research on nitride materials is relatively rare. SiN is a wide bandgap compound semiconductor material with many excellent properties that oxide resistive materials do not have, such as stable chemical properties, strong acid and alkali resistance, strong sodium ion resist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/883H10N70/026
Inventor 高海霞郭静姝姜鹏飞张真斐蒋欣孜
Owner XIDIAN UNIV
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