A kind of all-inorganic perovskite resistive variable memory and its preparation method

A technology of resistive memory and inorganic calcium, applied in electrical components and other directions, can solve problems such as solvent cannot be completely removed, secondary phases are prone to appear in the film, and film quality is reduced, and achieves good anti-aging properties, convenient operation, and large storage window. Effect

Active Publication Date: 2020-06-19
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the extremely low solubility of CsX (Cl, Br, I) in the solvent DMF and DMSO, the general preparation method can only obtain thinner CsPbBr 3 Thin film (less than 100nm), and there are a lot of holes in the film, and the continuity is poor; at the same time, the boiling point of DMSO is high (189 ° C), the solvent cannot be completely removed during low temperature preparation, and the film is prone to secondary phases, which reduces the quality of the film and affects the performance of the device. performance

Method used

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  • A kind of all-inorganic perovskite resistive variable memory and its preparation method
  • A kind of all-inorganic perovskite resistive variable memory and its preparation method
  • A kind of all-inorganic perovskite resistive variable memory and its preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Step 1. Clean the ITO substrate

[0038] Ultrasonic the ITO substrate in deionized water, acetone, and alcohol for 40 minutes, dry the ITO, stick insulating tape, and irradiate the ITO surface with ultraviolet light for 30 minutes in a UV instrument;

[0039] Step 2. Preparation of all-inorganic CsPbBr 3 powder

[0040] To prepare A solution, 10mmol PbBr 2 The powder was dissolved in 30 mL of 48% water content HBr solution and stirred at room temperature until PbBr 2 completely dissolved. To prepare solution B, dissolve 20 mmol of CsBr powder in 10 mL of deionized water and stir at room temperature until CsBr is completely dissolved. Use a syringe to quickly inject liquid B into liquid A, and the injection time is controlled within 9-10 seconds. Using methanol as the cleaning solution, CsPbBr was obtained after repeated cleaning and suction filtration 3 powder, and finally the CsPbBr 3 The powder was annealed at 100°C for 30 minutes in an argon atmosphere to remo...

Embodiment 2

[0048] Step 1. Clean the ITO substrate

[0049] Ultrasonic the ITO substrate in deionized water, acetone, and alcohol for 40 minutes, dry the ITO, stick insulating tape, and irradiate the ITO surface with ultraviolet light for 30 minutes in a UV instrument;

[0050] Step 2. Preparation of all-inorganic CsPbBr 3 powder

[0051] To prepare A solution, 10mmol PbBr 2 The powder was dissolved in 30 mL of 48% water content HBr solution and stirred at room temperature until PbBr 2 completely dissolved. To prepare solution B, dissolve 20 mmol of CsBr powder in 10 mL of deionized water and stir at room temperature until CsBr is completely dissolved. Use a syringe to quickly inject liquid B into liquid A, and the injection time is controlled within 9-10 seconds. Using methanol as the cleaning solution, CsPbBr was obtained after repeated cleaning and suction filtration 3 powder, and finally the CsPbBr 3 The powder was annealed at 100°C for 30 minutes in an argon atmosphere to remo...

Embodiment 3

[0059] Step 1. Clean the ITO substrate

[0060] Ultrasonic the ITO substrate in deionized water, acetone, and alcohol for 40 minutes, dry the ITO, stick insulating tape, and irradiate the ITO surface with ultraviolet light for 30 minutes in a UV instrument;

[0061] Step 2. Preparation of all-inorganic CsPbBr 3 powder

[0062] To prepare A solution, 10mmol PbBr 2 The powder was dissolved in 30 mL of 48% water content HBr solution and stirred at room temperature until PbBr 2 completely dissolved. To prepare solution B, dissolve 20 mmol of CsBr powder in 10 mL of deionized water and stir at room temperature until CsBr is completely dissolved. Use a syringe to quickly inject liquid B into liquid A, and the injection time is controlled within 9-10 seconds. Using methanol as the cleaning solution, CsPbBr was obtained after repeated cleaning and suction filtration 3 powder, and finally the CsPbBr 3 The powder was annealed at 100°C for 30 minutes in an argon atmosphere to remo...

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Abstract

The invention discloses an all-inorganic perovskite resistive variable memory and a preparation method thereof. The memory structure includes a bottom electrode, a resistive layer and a top electrode from bottom to top. ITO as bottom electrode, CsPbBr 3 The thin film is used as the resistive switch layer, and metal Pt, or Au, or W is used as the top electrode. The preparation step is to CsPbBr 3 The powder was dissolved in DMSO solution to prepare the precursor solution, and the precursor solution was spin-coated on the ITO bottom electrode with a spin coater, and then toluene was added dropwise as an anti-solvent to rapidly crystallize the perovskite layer, and annealed at 100-150°C for 10 ~30min, obtain dense CsPbBr 3 polycrystalline film. Then in CsPbBr 3 A top electrode is deposited on the surface of the film. The resistance switch layer of the memory is made of all inorganic materials, the preparation process is simple, and the cost is low. By changing the heating temperature and heating time, the device exhibits excellent resistance change characteristics and air thermal stability.

Description

technical field [0001] The invention relates to an all-inorganic perovskite resistive variable memory and a preparation method thereof, belonging to the technical field of inorganic materials and microelectronics. Background technique [0002] With the advent of the era of big data, people have higher and higher requirements for information storage. Traditional flash memory technology is difficult to meet the requirements of high-density storage. The development of new non-volatile memory has become a research hotspot in the semiconductor industry. Resistive memory has the advantages of low power consumption, high storage density, fast erasing and writing speed, and multi-value storage. It has become a strong competitor for the next generation of non-volatile memory and has broad application prospects. [0003] The basic structure of the resistive variable memory is a top electrode, a bottom electrode and a middle resistive variable layer. Its main working principle is that...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/00H10N70/011
Inventor 王浩蔡恒梅马国坤宋泽浩周海
Owner HUBEI UNIV
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