Resistive random access memory and manufacturing method thereof

A technology of resistive memory and manufacturing method, which is applied to electrical components and other directions, can solve the problems of low success rate of device operation, inability to perform switching operation of devices, low device yield, etc., so as to increase storage window, improve process uniformity and performance effect

Pending Publication Date: 2020-02-28
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the existing resistive memory is tested, the test results show that the yield rate of the device is very low, most of the devices cannot be switched, and

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The manufacturing method and structure of the resistive memory proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0032] The applicant found that during the test of the resistive memory, the tape-out test results showed that the yield rate of the device was very low, most of the devices could not perform normal switching operations, and the initial resistance of the device was high, exceeding 100MΩ, and the distribution was not uniform , which is also bad for getting a large storage window.

[0033] Please refer to figure 1 and figure 2 , figure 1 It is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a resistive random access memory and a manufacturing method thereof. According to the resistive random access memory and the manufacturing method thereof provided by the invention, a first electrode is formed on the surface of a semiconductor substrate, an intercalation layer is formed on the first electrode, a resistive switching layer is formed on the intercalation layer,a barrier layer is formed on the resistive switching layer, and a second electrode is formed on the barrier layer. The intercalation layer can be matched with the resistive switching layer to achievebetter device performance, and the initial resistance of the resistive random access memory can be modulated through the intercalation layer, so that the storage window of the resistive random accessmemory can be enlarged, and the process uniformity and the performance of the resistive random access memory can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a resistive variable memory and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, the market demand for non-volatile memory is increasingly shifting towards large capacity, low power consumption, high density and low cost. Resistive Random Access Memory (RRAM for short), as a research hotspot of next-generation memory, has strong application potential. RRAM is a new type of storage technology with a simple two-terminal structure. Its working mechanism is that under the action of an applied voltage, the device realizes a reversible transition between a high-resistance state and a low-resistance state by forming and breaking a conductive channel. , which is used to store data. It has the characteristics of good scalability and easy three-dimensional stacking. The international semiconductor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/011
Inventor 官郭沁邹荣田志
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap