125results about How to "Improve process uniformity" patented technology

Provided is cobalt-based alloy powder for laser cladding electricity conducting roller, the weight percentages of the chemical components of the material are that Cr is 24-30%, W is 6-10%, Mo is 3-6%, Ni takes 6-12%, Fe holds 2-10%, Mn is 0.5-2%, Si holds 0.2-2%, V is 0.1-0.6%, B takes 0.3-1.5%, C holds 0.5-2.5%, Y2O3 is 0-0.5%, Hf takes 0-0.5%, La2O3 holds 0-0.5%, Ce is 0-0.5%, and the rest is Co. The invention has the advantages that with multiple strengthened methods, the alloy substrate is strengthened and the crystal boundary quality is improved, which enables the alloy to achieve perfect combination property, thereby achieving medium rigidity and relatively high intensity of the alloy, simultaneously forming self-fluxing alloy and reducing alloy melting point, and increasing properties of oxidation resistance, abrasion resistance, corrosion resistance, and certain electricity conduction.

In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

The scheme provides a chemical mechanical grinding method. After an oxide layer is deposited in a peripheral circuit region and a storage region of a three-dimensional storage, the peripheral circuit region is subjected to etching for the first time to enable the lowest height of the oxide layer in the peripheral circuit region to be equivalent to the highest height of the stage in the storage region; a barrier layer is formed on the oxide layer of the three-dimensional storage; then the storage region is subjected to etching for the second time, and the barrier layer and the oxide layer in the three-dimensional storage are subjected to chemical and mechanical grinding at the same time until the lowest height of the oxide layer, corresponding to the stage region, in the storage region is equivalent to the highest height of the stage; and next, the residual barrier layer in the three-dimensional storage is removed. Therefore, the barrier layer is formed on the surface of the oxide layer; and in addition, the removing speed of the barrier layer is slower than that of the oxide layer, so that the additional barrier layer can protect the structure of the storage region, Dishing defect influence in the prior art can be avoided, the overall technological uniformity of the three-dimensional storage can be improved, and the yield is improved.

The invention discloses a central coaxial powder feeding type supersonic laser spraying method. The central coaxial powder feeding type supersonic laser spraying method comprises the steps that incident one or more laser beams are converged into one or more focusing light spots near the surface of a substrate through optical transformations; spraying materials are input into hollow regions of thelaser beams to be transmitted and form a bunch of supersonic particle jet flow driven by jet flow kinetic energy and the jet flow is sprayed to the surface of the substrate; when the particle jet flowintersects with the coaxial focusing light spots, laser energy is absorbed by sprayed particles and the sprayed particles are heated to soften or melt completely, meanwhile, a part of the laser energy is absorbed by the surface of the substrate, and the surface of the substrate is heated to soften but not melt completely; and a large number of the sprayed particles is subjected to supersonic collision in a to-be-deposited area on the surface of the substrate, and deposition is realized. According to the processes, the particle jet flow and the focusing light spots move continuously together relative to the surface of the substrate, and the sprayed particles deposit and superimpose continuously to form a coating. According to the central coaxial powder feeding type supersonic laser spraying method, by means of a series of the optical transformations, the incident laser beams are transformed and converged into annular or annular-like tiny focusing light spots, and the purpose of the supersonic laser spraying with central coaxial powder feeding is realized.

Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.

The invention discloses a symmetrical vapor deposition equipment reaction cavity. The reaction cavity mainly comprises a gas input body, a heater, a slide carrying disc, a slide carrying disc support, a reaction cavity housing, a heater, a heater support, a reaction gas channel, a cavity pedestal and a tail gas outlet. The reaction cavity is characterized in that the tail gas outlet is arranged at the center of the cavity pedestal, a gas chamber is arranged in the middle of the cavity pedestal and a cooling chamber is arranged around the gas chamber. The tail gas outlet is arranged at the center of the cavity pedestal so that gas inlet and outlet symmetrical distribution is realized and uniformity of gas flowing distribution in the reaction cavity is guaranteed and improved. Tail gas goes through the gas chamber of the cavity pedestal and cooling surfaces of the gas chamber of the cavity pedestal cool the reaction tail gas so that the reaction tail gas is uniformly cooled, precipitates are reduced and tail gas treatment system damage caused by a high reaction tail gas temperature is avoided.

The invention discloses an adjustable plasma constraint device applied to a plasma processing device, wherein the plasma constraint device is arranged between a processing area and an exhaust area, and comprises electric grounding elements, conducting elements and spacing elements. The conducting elements are arranged on the electric grounding elements, the conducting elements and the electric grounding elements are mutually insulated, and a plurality of exhaust channels are arranged on the conducting elements. Each spacing element is arranged between the electric grounding element and the conducting element, wherein the spacing elements are made of insulation materials. According to the adjustable plasma constraint device applied to the plasma processing device, the asymmetry of the plasma processing area can be improved, and processing non-uniformity of substrates is further improved.

A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing the plurality of balls, the porous plate having a circular planar shape; a plurality of gas flow grooves formed on an upper surface of the porous plate; and a gas distribution plate having a plurality of gas-feed holes at the bottom thereof and a plurality of gas-feed passages in the side portion thereof, the gas distribution plate surrounding lower and side portions of the porous plate.

The invention provides a heating furnace body and semiconductor device. The heating furnace body comprises an annular heat preservation body; and heating structures which are independent of one another and are sequentially arranged on the inner side of the annular heat preservation body in the axial direction of the annular heat preservation body; moreover, at least one heating structure comprisesa plurality of heating subsections which are in one-to-one correspondence with a plurality of subareas divided in the circumferential direction of the annular heat preservation body, and heat radiated by at least two heating subsections at the same time is different. According to the heating furnace body provided by the invention, the heating efficiency can be improved, the heating time can be shortened and the process uniformity can be improved under the condition of the same or less heating power.

The invention provides an air inlet system and a plasma processing device. The air inlet system is used for conveying process gas to a reaction chamber and comprises an air inlet pipeline and an air inlet channel. The air inlet of the air inlet channel is communicated with the air inlet pipeline. The air outlet of the air inlet channel is communicated with the interior of the reaction chamber. The process gas flows into the reaction chamber from the air inlet pipeline and the air inlet channel. An air flow stabilizing assembly is also arranged between the air inlet of the air inlet channel and the air inlet pipeline and is used for enabling the flow state of the process gas flowing into the air inlet channel to tend to a laminar flow state. The air inlet system may enable the flow state of the process gas flowing into the air inlet channel to tend to the laminar flow state such that the process gas flowing into the reaction chamber tends to a uniform state. Thus, the process uniformity of the plasma processing device can be further improved.

A wet treatment device retains a substrate to be treated on a stage and rotates the stage, to perform a wet treatment. The substrate to be treated, the center of which is moved away from the rotation center of the stage, is retained in the stage using a Verneuil chuck which blows an inert gas onto the reverse side of the substrate to be treated, so that the substrate to be treated rotates eccentrically in conjunction with the rotation of the stage. A first gas supply route used for the Verneuil chuck is provided in a rotary shaft portion within the stage. Further, in the stage, second gas supply routes which communicate with the first gas supply route to introduce an inert gas onto the reverse side of the substrate to be treated are axisymmetrically placed with respect to the center axis of the substrate to be treated.

The present invention provides an apparatus and method for use in processing semiconductor workpieces. The new apparatus and method allows for the production of thinner workpieces that at the same time remain strong. Particularly, a chuck is provided that includes a body, a retainer removeably attached to the body and a seal forming member. When a workpiece is placed on the chuck body and the retainer is engaged to the body, a peripheral portion of the back side of the workpiece is covered by the retainer while an interior region of the back side of the workpiece is exposed. The exposed back side of the workpiece is then subjected to a wet chemical etching process to thin the workpiece and form a relatively thick rim comprised of semiconductor material at the periphery of the workpiece. The thick rim or hoop imparts strength to the otherwise fragile, thinned semiconductor workpiece. Semiconductor workpieces made according to the present invention offer an improved structure for handling thinned wafers in conventional automated equipment. This results in improved yields and improved process efficiency.

The invention relates to a grid mesh, which is used for an ionic optical system of an ionic source. The grid mesh is provided with a grid hole area with grid holes, a plurality of thermal stress slots are formed in the grid mesh from the edge of the grid hole area in an outward radiation manner, and the thermal stress slots penetrate through the upper surface and the lower surface of the grid mesh. The invention further provides an ionic source using the grid mesh. The radiating thermal stress slots are formed in the grid mesh, so that the thermal deformation problem of the melting-resistant metal plane grid mesh can be thoroughly solved, the uniformness and stability of the ion beam stream can also be maintained, the long-term and repeated ionic source working under high-temperature environment can be met, and the ionic source performance repeatability and the ion beam processing technique uniformness can be improved.

The invention provides a carrying device and semiconductor processing equipment. The carrying device comprises a chuck and a focusing ring, wherein the upper surface of the chuck is used for carrying a processed workpiece; the focusing ring encircles the periphery of the chuck; and moreover, the dielectric constant values of the focusing ring at different areas in the peripheral direction are different, so that the etching rate of the edge of the processed workpiece everywhere tends to be uniform. According to the carrying device provided by the invention, the etching rate of the edge of the processed workpiece everywhere can tend to be uniform, so that the technological uniformity can be improved.

The invention discloses a high-temperature-resistant oxidation coating nickel-based alloy powder for laser cladding, and the powder mainly comprises the following chemical components: Ni, Cr, Mo, W, Co, V, Fe, Si, Mn, and at least two of rare earth elements Y2O3 3, La2O3 3, Ce and Hf in proper amount. The invention fundamentally solves and improves the crack resistance, the formability, the process stability and the component uniformity of the alloy powder in a laser cladding layer, and meets the comprehensive performance requirements of a repair part on the cladding layer, such as oxidation resistance, corrosion resistance, wear resistance, fatigue resistance, moderate hardness and strength, certain conductivity and the like. The powder material can be used for laser cladding of the conductive roller part of the key equipment of a electrogalvanizing unit, solves the repairing problem of the conductive roller after corrosion and abrasion, and provides an effective and convenient methodfor successfully repairing the invalid conductive roller part in the metallurgical industry.