Symmetrical vapor deposition equipment reaction cavity

Abstract

The invention discloses a symmetrical vapor deposition equipment reaction cavity. The reaction cavity mainly comprises a gas input body, a heater, a slide carrying disc, a slide carrying disc support, a reaction cavity housing, a heater, a heater support, a reaction gas channel, a cavity pedestal and a tail gas outlet. The reaction cavity is characterized in that the tail gas outlet is arranged at the center of the cavity pedestal, a gas chamber is arranged in the middle of the cavity pedestal and a cooling chamber is arranged around the gas chamber. The tail gas outlet is arranged at the center of the cavity pedestal so that gas inlet and outlet symmetrical distribution is realized and uniformity of gas flowing distribution in the reaction cavity is guaranteed and improved. Tail gas goes through the gas chamber of the cavity pedestal and cooling surfaces of the gas chamber of the cavity pedestal cool the reaction tail gas so that the reaction tail gas is uniformly cooled, precipitates are reduced and tail gas treatment system damage caused by a high reaction tail gas temperature is avoided.

Description

technical field [0001] The invention relates to a chemical vapor deposition equipment, in particular to a symmetrical reaction chamber of the vapor deposition equipment. Background technique [0002] Vapor deposition technology is to use the physical and chemical processes that occur in the gas phase to form functional or decorative metal, non-metal or compound coatings on the surface of the workpiece. Vapor deposition equipment integrates precision machinery, semiconductor materials, vacuum electronics, fluid mechanics, optics, chemistry, and computer disciplines. It is a high-end semiconductor material and optoelectronic device manufacturing special equipment with high automation, high price and high technology integration. . [0003] The structure of the gas phase deposition equipment is complex, and the uniformity of the flow field inside the reaction chamber has an important influence on the uniformity and consistency of the process growth quality. In order to simplify...

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Problems solved by technology

[0003] The structure of the gas phase deposition equipment is complex, and the uniformity of the flow field inside the reaction chamber has an important influence on the uniformity and consistency of the process growth quality. In order to simplify the design of the gas phase equipment in the prior art, the tail gas extraction port is usually set on the side of the reaction chamber. Then install a uniform flow plate or a uniform flow tank in the reaction chamber to make the flow field in the reaction chamber uniform, because it is not easy to achieve the ultimate uniformity of the flow field in the reaction chamber when the vacuum pump pumping speed is high

In addition, the temperature of some vapor deposition processes is usually high, and the temperature of the exhaust gas is also high. The high-temperature exhaust gas may be deposited on the flowing wall surface to cause pollution of the reaction chamber. The high temperature of the exhaust gas will also cause damage to the subsequent exhaust gas treatment system or increase its design requirements. To increase the cost, the existing technology will set water cooling on the wall of the reaction chamber and / or specially design the cooling gas pipeline on the tail gas pipeline to cool the gas, cool the reaction gas and then discharge it

The design is not simple, while increasing the equipment space and cost

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