Air inlet system and plasma processing device

Abstract

The invention provides an air inlet system and a plasma processing device. The air inlet system is used for conveying process gas to a reaction chamber and comprises an air inlet pipeline and an air inlet channel. The air inlet of the air inlet channel is communicated with the air inlet pipeline. The air outlet of the air inlet channel is communicated with the interior of the reaction chamber. The process gas flows into the reaction chamber from the air inlet pipeline and the air inlet channel. An air flow stabilizing assembly is also arranged between the air inlet of the air inlet channel and the air inlet pipeline and is used for enabling the flow state of the process gas flowing into the air inlet channel to tend to a laminar flow state. The air inlet system may enable the flow state of the process gas flowing into the air inlet channel to tend to the laminar flow state such that the process gas flowing into the reaction chamber tends to a uniform state. Thus, the process uniformity of the plasma processing device can be further improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to an air intake system and plasma processing equipment. Background technique [0002] When using plasma processing equipment for etching, coating and other processes, it is usually necessary to introduce process gas into the reaction chamber through the inlet device, and the process gas in the reaction chamber is excited to form plasma to etch the workpiece to be processed , deposition and other processes. [0003] figure 1 It is a schematic diagram of the structure of the existing plasma processing equipment. Such as figure 1 As shown, the plasma processing equipment includes a reaction chamber 1 , an air inlet system 7 , a radio frequency coil 9 and a radio frequency power supply 5 . Wherein, an electrostatic chuck 4 is arranged in the reaction chamber 1 to adsorb the processed workpiece 3 on its upper surface by means of electrostatic attractio...

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Problems solved by technology

[0005] The above-mentioned plasma processing equipment inevitably has the following problems in practical applications, that is: since the ventilation cross-sectional area of ​​the gas pipeline 9 is smaller than the ventilation cross-sectional area of ​​the central inlet passage 71 and the edge inlet passage 73, this makes the gas pipelines respectively The gas flow state of the process gas flowing into the central inlet passage 71 and the edge inlet passage 73 will become a turbulent state due to the sudden increase in the cross-sectional area of ​​the ventilation, and the process gas in the turbulent state enters through the central inlet passage 71 and the edge respectively. After the gas channel flows into the reaction chamber 1, it will diffuse randomly, resulting in uneven distribution of the process gas flowing into the reaction chamber 1, thereby reducing the process uniformity of the plasma processing equipment

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