Carrying device and semiconductor processing equipment

Abstract

The invention provides a carrying device and semiconductor processing equipment. The carrying device comprises a chuck and a focusing ring, wherein the upper surface of the chuck is used for carrying a processed workpiece; the focusing ring encircles the periphery of the chuck; and moreover, the dielectric constant values of the focusing ring at different areas in the peripheral direction are different, so that the etching rate of the edge of the processed workpiece everywhere tends to be uniform. According to the carrying device provided by the invention, the etching rate of the edge of the processed workpiece everywhere can tend to be uniform, so that the technological uniformity can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to a carrying device and semiconductor processing equipment. Background technique [0002] In the process of manufacturing integrated circuits (IC) and microelectromechanical systems (MEMS), especially in the process of implementing plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD), etc., often Use the supporting device to carry and heat the processed workpiece such as the wafer, provide DC bias voltage for the wafer and control the temperature of the wafer surface. [0003] figure 1 It is a schematic diagram of the structure of a typical bearing device. like figure 1 As shown, the carrier device includes an electrostatic chuck 11 and an edge assembly. Wherein, the electrostatic chuck 11 is used to fix the wafer 12 on its upper surface by means of electrostatic adsorption, and the electrostatic chuck 11 is also made of co...

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Problems solved by technology

[0005] Because the above-mentioned focus ring 13 is processed by a single and uniform material, the impedance of its circumferential direction is the same everywhere, which makes the influence of the focus ring 13 circumferential direction on the electric field of the lower electrode also the same. However, in practice In applications, there are often cases where the etching rate at the edge of the wafer is not uniform, and the existing focus ring 13 does not have the ability to make the etching rate at the edge of the wafer tend to be uniform

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