Air inlet device and plasma processing equipment

Abstract

The invention provides an air inlet device and plasma processing equipment. The air inlet device comprises an air inlet unit and an air source, wherein the air source supplies process gas into a reaction chamber by virtue of the air inlet unit; the air inlet unit comprises a central air inlet nozzle arranged at the top of the reaction chamber and an edge air inlet nozzle group arranged on the side wall of the reaction chamber, and the central air inlet nozzle is respectively communicated with the air source and the reaction chamber and used for spraying the process gas to a central area of the reaction chamber; and the edge air inlet nozzle group comprises at least two edge air inlet nozzles which are arranged along the circumferential direction of the reaction chamber and are independent of each other; the edge air inlet nozzle group is used for spraying the process gas to an edge area of the reaction chamber. By adopting the air inlet device provided by the invention, the flow of the process gas flowing towards the edge area of the reaction chamber can be further increased so as to ensure that distribution of the process gas in the edge area and the central area of the reaction chamber tends to be uniform, so that the process uniformity of the plasma processing equipment can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an air intake device and plasma processing equipment. Background technique [0002] Plasma processing equipment has been widely used in the manufacturing processes of integrated circuits (IC) and microelectromechanical systems (MEMS), such as inductively coupled plasma (ICP) processing equipment, the basic principle of which is to excite the process gas in the reaction chamber Plasma is formed, and active particles such as ions, electrons, and free radicals contained in the plasma undergo various physical and chemical reactions with the substrate surface, thereby realizing etching or depositing a thin film on the substrate surface. [0003] figure 1 It is a schematic diagram of a typical plasma processing equipment. Such as figure 1 As shown, the plasma processing equipment includes a reaction chamber 10 , an air inlet device, a bias power supply 16 and an ...

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Problems solved by technology

[0006] Although the above-mentioned air inlet nozzle 13 has improved the distribution uniformity of the process gas in the reaction chamber 10 to a certain extent, it inevitably has the following problems in practical applications, that is: because the above-mentioned air inlet nozzle 13 is still located in the reaction chamber The central position of the chamber 10, which makes the gas inlet nozzle 13 limited in improving the flow rate of the process gas flowing towards the edge region of the reaction chamber 10, resulting in the above-mentioned plasma processing equipment being unable to meet the requirements of high process uniformity.

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