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Adjustable limiting ring used for plasma processing device

A processing device and plasma technology, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of non-uniformity, non-uniformity, and non-uniformity of the substrate process in the process area, so as to improve the process area asymmetry. , Improve the effect of process uniformity problem

Active Publication Date: 2013-06-26
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology

[0005] However, those skilled in the art should understand that the plasma processing area in the plasma processing device will produce inhomogeneity, and the inhomogeneity of the process area will further lead to the inhomogeneity of the substrate process. As we all know, the unevenness of the substrate process Uniformity is the core technical problem to be solved in this field, and the present invention proposes based on this

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  • Adjustable limiting ring used for plasma processing device
  • Adjustable limiting ring used for plasma processing device
  • Adjustable limiting ring used for plasma processing device

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Embodiment Construction

[0026] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0027] The invention mechanism of the present invention is to set at least one baffle under the corresponding confinement ring in the part of the processing area where the plasma concentration is low, so as to limit the flow velocity of the plasma flowing out of the cavity and improve the plasma processing area. The non-alignment ensures the uniformity of the substrate process here and other regions of the substrate. figure 1 Shows the process area in the plasma processing apparatus before using the present invention, such as figure 1 As shown, because it exemplarily directly or indirectly grounds the confinement ring on the right side of the illustrated chamber, the process region A near this ground (the left side of the illustrated plasma processing apparatus) is "dragged ” is higher, and the plasma concentration is lower than that on the other s...

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Abstract

The invention provides an adjustable limiting ring used for a plasma processing device. The limiting ring is used for controlling discharge of redundant gas in a manufacturing process and neutralizing redundant charged particles; at least a baffle is arranged below the limiting ring; the baffle is parallel with the limiting ring and is at least partially overlapped with the limiting ring in the vertical direction; and the baffle is provided with a plurality of discharge channels. The adjustable limiting ring used for the plasma processing device can improve regional asymmetry in the plasma manufacturing process, and further improve non-uniformity of the manufacturing process of substrates.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an adjustable confinement ring for a plasma processing device. Background technique [0002] The plasma processing device uses the working principle of the vacuum reaction chamber to process the semiconductor substrate and the substrate of the plasma flat panel. The working principle of the vacuum reaction chamber is to pass a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to activate the reaction gas to ignite and maintain the plasma body, in order to respectively etch the material layer on the surface of the substrate or deposit the material layer on the surface of the substrate, and then process the semiconductor substrate and the plasma plate. For example, capacitive plasma reactors have been widely used to process semiconductor substrates...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
Inventor 凯文·佩尔斯邱达燕吴紫阳李菁王兆祥
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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